DSEP8-02A datasheet, PDF - EEWORLD Datasheet

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DSEP8-02A: DescriptionRectifier Diode, Avalanche, 1 Phase, 1 Element, 8A, 200V V(RRM), Silicon, TO-220AC, TO-220AC, 2 PIN; CategoryDiscrete semiconductor diode; File Size69KB，1 Pages; ManufacturerIXYS; Environmental Compliance

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DSEP8-02A Overview

Rectifier Diode, Avalanche, 1 Phase, 1 Element, 8A, 200V V(RRM), Silicon, TO-220AC, TO-220AC, 2 PIN

DSEP8-02A Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	IXYS
Parts packaging code	TO-220AC
package instruction	TO-220AC, 2 PIN
Contacts	3
Reach Compliance Code	not_compliant
ECCN code	EAR99
Other features	SNUBBER DIODE, FREE WHEELING DIODE
application	GENERAL PURPOSE
Shell connection	CATHODE
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	0.91 V
JEDEC-95 code	TO-220AC
JESD-30 code	R-PSFM-T2
JESD-609 code	e3
Maximum non-repetitive peak forward current	80 A
Number of components	1
Phase	1
Number of terminals	2
Maximum operating temperature	175 °C
Maximum output current	8 A
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	260
Maximum power dissipation	50 W
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	200 V
Maximum reverse recovery time	0.025 µs
surface mount	NO
technology	AVALANCHE
Terminal surface	Matte Tin (Sn)
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	35

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DSEP 8-02A

HiPerFRED

Epitaxial Diode

with soft recovery

Preliminary Data

RSM

200

RRM

Type

FAV

= 8 A

RRM

= 200 V

= 25 ns

TO-220 AC

200

DSEP 8-02A

C (TAB)

A = Anode, C = Cathode, TAB = Cathode

FRMS

FAVM

FSM

VJM

stg

tot

Weight

= 150°C; rectangular, d = 0.5

= 45°C; t

= 10 ms (50 Hz), sine

= 25°C; non-repetitive

= 2 A; L = 180 µH

= 1.5·V

typ.; f = 10 kHz; repetitive

-55...+175

175

-55...+150

0.4...0.6

= 25°C

mounting torque

typical

Symbol

①

Test Conditions

Characteristic Values

typ.

max.

0.2

0.94

1.30

2.5

0.5

4.1

µA

K/W

= 25°C V

= V

RRM

= 150°C V

= V

RRM

thJC

thCH

②

= 8 A;

= 150°C

= 25°C

= 1 A; -di/dt = 50 A/µs;

= 30 V; T

= 25°C

= 100 V; I

= 10 A; -di

/dt = 100 A/µs

= 100°C

Pulse test:

①

Pulse Width = 5 ms, Duty Cycle < 2.0 %

②

Pulse Width = 300

µs,

Duty Cycle < 2.0 %

Data according to IEC 60747 and per diode unless otherwise specified

IXYS reserves the right to change limits, test conditions and dimensions.

0.5

0.2

°C

Recommended replacement:

DPG10I200PA

•

Symbol

Test Conditions

Maximum Ratings

Features

International standard package

Planar passivated chips

Very short recovery time

Extremely low switching losses

Low I

-values

Soft recovery behaviour

Epoxy meets UL 94V-0

Applications

• Antiparallel diode for high frequency

switching devices

• Antisaturation diode

• Snubber diode

• Free wheeling diode in converters

and motor control circuits

• Rectifiers in switch mode power

supplies (SMPS)

• Inductive heating

• Uninterruptible power supplies (UPS)

• Ultrasonic cleaners and welders

Advantages

• Avalanche voltage rated for reliable

operation

• Soft reverse recovery for low

EMI/RFI

• Low I

reduces:

- Power dissipation within the diode

- Turn-on loss in the commutating switch

Dimensions see Outlines.pdf

20080317a

008

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