DSSK28-0045BS
Schottky Diode
V
RRM
I
FAV
V
F
=
=
2x
=
45 V
15 A
0.43 V
High Performance Schottky Diode
Low Loss and Soft Recovery
Common Cathode
Part number
DSSK28-0045BS
Marking on Product: DSSK28-0045BS
Backside: cathode
1
2
3
Features / Advantages:
●
Very low Vf
●
Extremely low switching losses
●
Low Irm values
●
Improved thermal behaviour
●
High reliability circuit operation
●
Low voltage peaks for reduced
protection circuits
●
Low noise switching
Applications:
●
Rectifiers in switch mode power
supplies (SMPS)
●
Free wheeling diode in low voltage
converters
Package:
TO-263 (D2Pak)
●
Industry standard outline
●
RoHS compliant
●
Epoxy meets UL 94V-0
Disclaimer Notice
Information furnished is believed to be accurate and reliable. However, users should independently
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,
and may not be used in, all applications. Read complete Disclaimer Notice at
www.littelfuse.com/disclaimer-electronics.
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20190222b
© 2019 IXYS all rights reserved
DSSK28-0045BS
Schottky
Symbol
V
RSM
V
RRM
I
R
V
F
Definition
Conditions
T
VJ
= 25°C
T
VJ
= 25°C
45 V
45 V
15 A
30 A
15 A
30 A
T
VJ
= 150 °C
d = 0.5
T
VJ
= 150 °C
0.24
11.1
0.25
T
C
= 25°C
t = 10 ms; (50 Hz), sine; V
R
= 0 V
V
R
=
5 V f = 1 MHz
T
VJ
= 45°C
T
VJ
= 25°C
980
90
320
V
mΩ
K/W
W
A
pF
T
VJ
= 125 °C
0.43
0.60
15
T
VJ
= 25°C
T
VJ
= 100°C
T
VJ
= 25°C
min.
max. non-repetitive reverse blocking voltage
max. repetitive reverse blocking voltage
reverse current, drain current
Ratings
typ.
max. Unit
45
V
45
20
100
0.48
V
mA
mA
V
V
V
V
A
V
R
=
V
R
=
I
F
=
I
F
=
I
F
=
I
F
=
forward voltage drop
I
FAV
V
F0
r
F
R
thJC
R
thCH
P
tot
I
FSM
C
J
average forward current
T
C
= 135 °C
rectangular
threshold voltage
slope resistance
for power loss calculation only
thermal resistance junction to case
thermal resistance case to heatsink
total power dissipation
max. forward surge current
junction capacitance
1.4 K/W
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20190222b
© 2019 IXYS all rights reserved
DSSK28-0045BS
Package
Symbol
I
RMS
T
VJ
T
op
T
stg
Weight
F
C
mounting force with clip
TO-263 (D2Pak)
Definition
RMS current
virtual junction temperature
operation temperature
storage temperature
Ratings
Conditions
per terminal
min.
-55
-55
-55
typ.
max.
35
150
125
150
Unit
A
°C
°C
°C
g
N
2
20
60
Product Marking
Part No.
Logo
Assembly Line
Date Code
Assembly Code
XXXXXXXXX
IXYS
Zyyww
000000
Ordering
Standard
Alternative
Ordering Number
DSSK28-0045BS-TRL
DSSK28-0045BS-TUB
Marking on Product
DSSK28-0045BS
DSSK28-0045BS
Delivery Mode
Tape & Reel
Tube
Quantity
800
50
Code No.
484296
484288
Similar Part
DSB30C45PB
DSB30C45HB
DSB60C45PB
DSB60C45HB
Package
TO-220AB (3)
TO-247AD (3)
TO-220AB (3)
TO-247AD (3)
Voltage class
45
45
45
45
Equivalent Circuits for Simulation
I
V
0
R
0
threshold voltage
slope resistance *
Schottky
* on die level
T
VJ
= 150 °C
V
0 max
R
0 max
0.24
V
mΩ
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20190222b
© 2019 IXYS all rights reserved
DSSK28-0045BS
Outlines TO-263 (D2Pak)
Dim.
W
A
c2
Supplier
Option
E
D
A1
H
4
1 2 3
c
2x e
10.92
(0.430)
3x b2
mm (Inches)
2x b
E1
A
A1
A2
b
b2
c
c2
D
D1
D2
E
E1
e
e1
H
L
L1
W
9.02
(0.355)
Millimeter
min
max
4.06
4.83
typ. 0.10
2.41
0.51
0.99
1.14
1.40
0.40
0.74
1.14
1.40
8.38
9.40
8.00
8.89
2.5
9.65
10.41
6.22
8.50
2,54 BSC
4.28
14.61 15.88
1.78
2.79
1.02
1.68
typ.
0.040
0.02
Inches
min
max
0.160 0.190
typ. 0.004
0.095
0.020 0.039
0.045 0.055
0.016 0.029
0.045 0.055
0.330 0.370
0.315 0.350
0.098
0.380 0.410
0.245 0.335
0,100 BSC
0.169
0.575 0.625
0.070 0.110
0.040 0.066
typ.
0.002
0.0008
L1
L2
L
D1
All dimensions conform with
and/or within JEDEC standard.
3.81
(0.150)
1.78
(0.07)
2.54 (0.100)
3.05
(0.120)
Recommended min. foot print
1
2
3
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20190222b
© 2019 IXYS all rights reserved
DSSK28-0045BS
Schottky
40
1000
T
VJ
=150°C
2000
100
10
T
VJ
= 25°C
125°C
I
R
[mA]
1000
10
100°C
I
F
[A]
75°C
C
T
[pF]
1
T
VJ
=
150°C
125°C
25°C
50°C
0.1
25°C
200
0
10
20
30
40
50
0
10
20
30
40
50
1
0.0
0.01
0.2
0.4
0.6
0.8
V
F
[V]
Fig. 1 Max. forward voltage
drop characteristics
V
R
[V]
Fig. 2 Typ. reverse current
I
R
vs. reverse voltage V
R
25
V
R
[V]
Fig. 3 Typ. junction capacitance
C
T
vs. reverse voltage V
R
40
30
DC
20
I
F(AV)
20
d = 0.5
P
(AV)
15
[W]
10
[A]
10
5
d=
DC
0.5
0.33
0.25
0.17
0.08
0
0
50
100
150
200
0
0
5
10 15
20
25
30
35
T
C
[°C]
Fig. 4 Average forward current
I
F(AV)
vs. case temp. T
C
2
1
D = 0.5
0.33
0.25
0.17
I
F(AV)
[A]
Fig. 5 Forward power loss
characteristics
Z
thJC
0.08
0.1
[K/W]
Single Pulse
0.01
0.0001
Note: All curves are per diode
0.001
0.01
0.1
1
t [s]
Fig. 6 Transient thermal impedance junction to case at various duty cycles
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20190222b
© 2019 IXYS all rights reserved
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