DGS 9-03AS
DGS 10-03A
Gallium Arsenide Schottky Rectifier
Preliminary Data
I
FAV
= 11 A
V
RRM
= 300 V
C
Junction
= 9 pF
V
RSM
V
RRM
Type
V
V
Marking
on product
A
Circuit
Package
A = Anode, C = Cathode , TAB = Cathode
C
300 300 DGS 9-03AS
9A030AS
A
C
TO-252 AA
A
A
C (TAB)
300 300 DGS 10-03A
DGS 10-03A
TO-220 AC
C
A
C (TAB)
Symbol
I
FAV
I
FAV
I
FSM
T
VJ
T
stg
P
tot
M
d
Symbol
I
R
V
F
C
J
R
thJC
R
thCH
Weight
Conditions
T
C
= 25°C; DC
T
C
= 90°C; DC
T
VJ
= 45°C; t
p
= 10 ms (50 Hz), sine
Maximum Ratings
11
8
20
-55...+175
-55...+150
A
A
A
°C
°C
W
Nm
Features
●
●
●
●
●
T
C
= 25°C
mounting torque (TO-220)
Conditions
T
VJ
= 25°C V
R
= V
RRM
T
VJ
= 125°C V
R
= V
RRM
I
F
= 5 A;
I
F
= 5 A;
T
VJ
= 125°C
T
VJ
= 25°C
34
0.4...0.6
●
●
Low forward voltage
Very high switching speed
Low junction capacity of GaAs
- low reverse current peak at turn off
Soft turn off
Temperature independent switching
behaviour
High temperature operation capability
Epoxy meets UL 94V-0
Characteristic Values
typ.
max.
1.3
1.3
1.6
1.6
9
4.4
2
mA
mA
V
V
pF
K/W
K/W
g
g
Applications
●
MHz switched mode power supplies
(SMPs)
●
●
●
Small size SMPs
High frequency converters
Resonant converters
V
R
= 150 V; T
VJ
= 125°C
TO-220
TO-252
TO-220
Pulse Width = 5 ms, Duty Cycle < 2.0 %
0.5
0.3
2
Pulse test:
Data according to IEC 60747 and per diode
unless otherwise specified
IXYS reserves the right to change limits, Conditions and dimensions.
© 2003 IXYS All rights reserved
IXYS Semiconductor GmbH
Edisonstr. 15,
D-68623 Lampertheim
Phone: +49-6206-503-0, Fax: +49-6206-503627
1-2
IXYS Corporation
3540 Bassett Street, Santa Clara CA 95054
Phone: (408) 982-0700, Fax: 408-496-0670
311
DGS 9-03AS
DGS 10-03A
Outlines TO-220 AC
100
1000
pF
A
10
I
F
C
J
100
T
VJ
= 125°C
1
10
0,1
T
VJ
=
125°C
25°C
Dim.
Millimeter
Min. Max.
12.70 14.73
14.23 16.51
9.66 10.66
3.54 4.08
5.85
2.54
1.15
-
0.64
4.83
3.56
0.51
2.04
0.64
6.85
3.42
1.77
6.35
0.89
5.33
4.82
0.76
2.49
1.39
Min.
Inches
Max.
0,01
0,0
0,5
1,0
1,5
V
F
2,0 V 2,5
1
0,1
1
10
100 V 1000
V
R
A
B
C
D
E
F
G
H
0.500 0.580
0.560 0.650
0.380 0.420
0.139 0.161
2.300 0.420
0.100 0.135
0.045 0.070
-
0.250
0.025 0.035
0.190 0.210
0.140 0.190
0.020 0.030
0.080 0.115
0.025 0.055
Fig. 1typ. forward characteristics
Fig. 2 typ. junction capacity
versus blocking voltage
10
K/W
1
Z
thJC
0,1
Single Pulse
TO-252
TO-220
J
K
L
M
N
Q
Outlines TO-252 AA
0,01
DGS9-03AS
0,00001
0,0001
0,001
0,01
0,1
1
t
s
10
1 Anode
2 NC
3 Anode
4 Cathode
Fig. 3 typ. thermal impedance junction to case
Dim.
A
A1
A2
b
b1
b2
c
c1
D
D1
E
E1
e
e1
H
L
L1
L2
L3
Millimeter
Min. Max.
2.19
2.38
0.89
1.14
0
0.13
0.64
0.89
0.76
1.14
5.21
5.46
0.46
0.58
0.46
0.58
5.97
6.22
4.32
5.21
6.35
6.73
4.32
5.21
2.28 BSC
4.57 BSC
9.40 10.42
0.51
1.02
0.64
0.89
2.54
1.02
1.27
2.92
Inches
Min.
Max.
0.086
0.094
0.035
0.045
0
0.005
0.025
0.035
0.030
0.045
0.205
0.215
0.018
0.023
0.018
0.023
0.235
0.245
0.170
0.205
0.250
0.265
0.170
0.205
0.090 BSC
0.180 BSC
0.370
0.410
0.020
0.040
0.025
0.035
0.100
0.040
0.050
0.115
311
© 2003 IXYS All rights reserved
IXYS Semiconductor GmbH
Edisonstr. 15,
D-68623 Lampertheim
Phone: +49-6206-503-0, Fax: +49-6206-503627
2-2
IXYS Corporation
3540 Bassett Street, Santa Clara CA 95054
Phone: (408) 982-0700, Fax: 408-496-0670
Microcontroller MCU
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