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DSEP130-06A

Description
Rectifier Diode, Avalanche, 1 Phase, 1 Element, 130A, 600V V(RRM), Silicon, TO-247AD,
CategoryDiscrete semiconductor    diode   
File Size15KB,1 Pages
ManufacturerIXYS
Environmental Compliance  
Download Datasheet Parametric View All

DSEP130-06A Overview

Rectifier Diode, Avalanche, 1 Phase, 1 Element, 130A, 600V V(RRM), Silicon, TO-247AD,

DSEP130-06A Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerIXYS
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresSNUBBER DIODE, FREE WHEELING DIODE
applicationSOFT RECOVERY
Shell connectionCATHODE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.63 V
JEDEC-95 codeTO-247AD
JESD-30 codeR-PSFM-T2
Maximum non-repetitive peak forward current1000 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature175 °C
Minimum operating temperature-55 °C
Maximum output current130 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum repetitive peak reverse voltage600 V
Maximum reverse recovery time0.035 µs
surface mountNO
technologyAVALANCHE
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
Advanced Technical Information
DSEP 130-06A
HiPerFRED
TM
Epitaxial Diode
with soft recovery
I
FAV
= 130 A
V
RRM
= 600 V
t
rr
= 35 ns
A
C
V
RSM
V
600
V
RRM
V
600
Type
TO-247 AD
DSEP130-06A
C
A
C (TAB)
A = Anode, C = Cathode, TAB = Cathode
Symbol
I
FRMS
I
FAVM
I
FSM
E
AS
I
AR
T
VJ
T
VJM
T
stg
P
tot
M
d
Weight
Conditions
T
C
= 70°C; rectangular, d = 0.5
T
VJ
= 45°C; t
p
= 10 ms (50 Hz), sine
T
VJ
= 25°C; non-repetitive
I
AS
= 1.8 A; L = 180 µH
V
A
= 1.5·V
R
typ.; f = 10 kHz; repetitive
Maximum Ratings
70
130
1000
0.4
0.2
-55...+175
175
-55...+150
A
A
A
mJ
A
°C
°C
°C
W
Nm
g
Features
International standard package
Planar passivated chips
Very short recovery time
Extremely low switching losses
Low I
RM
-values
Soft recovery behaviour
Epoxy meets UL 94V-0
Applications
• Antiparallel diode for high frequency
switching devices
• Antisaturation diode
• Snubber diode
• Free wheeling diode in converters
and motor control circuits
• Rectifiers in switch mode power
supplies (SMPS)
• Inductive heating
• Uninterruptible power supplies (UPS)
• Ultrasonic cleaners and welders
Advantages
• Avalanche voltage rated for reliable
operation
• Soft reverse recovery for low
EMI/RFI
• Low I
RM
reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating
switch
T
C
= 25°C
mounting torque
typical
375
0.8...1.2
6
Symbol
I
R
Conditions
T
VJ
= 25°C V
R
= V
RRM
T
VJ
= 150°C V
R
= V
RRM
I
F
= 130 A;
T
VJ
= 150°C
T
VJ
= 25°C
Characteristic Values
typ.
max.
1000
4
1.63
2.26
0.4
0.25
µA
mA
V
V
K/W
K/W
ns
10.2
A
V
F
R
thJC
R
thCH
t
rr
I
RM
I
F
= 1 A; -di/dt = 400 A/µs;
V
R
= 30 V; T
VJ
= 25°C
V
R
= 100 V; I
F
= 200 A; -di
F
/dt = 100 A/µs
T
VJ
= 100°C
35
8
Dimensions see IXYS Databook 2001
Pulse test:
Pulse Width = 5 ms, Duty Cycle < 2.0 %
Pulse Width = 300 µs, Duty Cycle < 2.0 %
Data according to IEC 60747 and per diode unless otherwise specified
IXYS reserves the right to change limits, test conditions and dimensions.
© 2002 IXYS All rights reserved
IXYS Semiconductor GmbH
Edisonstr. 15,
D-68623 Lampertheim
Phone: +49-6206-503-0, Fax: +49-6206-503627
1-1
IXYS Corporation
3540 Bassett Street, Santa Clara CA 95054
Phone: (408) 982-0700, Fax: 408-496-0670
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