DSEI 2x 30-10B
DSEI 2x 31-10B
Fast Recovery
Epitaxial Diode (FRED)
I
FAVM
= 2x 30 A
V
RRM
= 1000 V
t
rr
= 35 ns
V
RSM
V
V
RRM
V
Type
miniBLOC, SOT-227 B
1000 1000
DSEI 2x 30-10B DSEI 2x 31-10B
DSEI 2x 30
DSEI 2x 31
E72873
Symbol
I
FRMS
I
FAVM
①
I
FRM
I
FSM
Test Conditions
Maximum Ratings (per diode)
70
30
375
200
210
185
195
200
180
170
160
-40...+150
150
-40...+150
A
A
A
A
A
A
A
As
A
2
s
A
2
s
A
2
s
°C
°C
°C
W
V~
2
Features
●
T
VJ
= T
VJM
T
C
= 50°C; rectangular, d = 0.5
t
P
< 10
µs;
rep. rating, pulse width limited by T
VJM
T
VJ
= 45°C;
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
●
●
●
●
T
VJ
= 150°C; t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
It
2
●
●
●
T
VJ
= 45°C
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
International standard package
miniBLOC (ISOTOP compatible)
Isolation voltage 2500 V~
2 independent FRED in 1 package
Planar passivated chips
Very short recovery time
Extremely low switching losses
Low I
RM
-values
Soft recovery behaviour
T
VJ
= 150°C; t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
T
VJ
T
VJM
T
stg
P
tot
V
ISOL
M
d
Weight
Symbol
I
R
Test Conditions
T
VJ
= 25°C
T
VJ
= 25°C
T
VJ
= 125°C
I
F
= 30 A;
V
R
= V
RRM
V
R
= 0.8 • V
RRM
V
R
= 0.8 • V
RRM
T
VJ
= 150°C
T
VJ
= 25°C
T
C
= 25°C
50/60 Hz, RMS
I
ISOL
≤
1 mA
Mounting torque
Terminal connection torque (M4)
Applications
●
●
●
100
2500
1.5/13
1.5/13
30
●
●
Nm/lb.in.
Nm/lb.in.
g
●
●
●
Antiparallel diode for high frequency
switching devices
Anti saturation diode
Snubber diode
Free wheeling diode in converters
and motor control circuits
Rectifiers in switch mode power
supplies (SMPS)
Inductive heating and melting
Uninterruptible power supplies (UPS)
Ultrasonic cleaners and welders
Characteristic Values (per diode)
typ.
max.
750
250
7
2
2.4
1.5
12.5
1.25
0.05
µA
µA
mA
V
V
V
mΩ
K/W
K/W
ns
A
Advantages
●
●
V
F
V
T0
r
T
R
thJC
R
thCK
t
rr
I
RM
●
●
●
For power-loss calculations only
T
VJ
= T
VJM
High reliability circuit operation
Low voltage peaks for reduced
protection circuits
Low noise switching
Low losses
Operating at lower temperature or
space saving by reduced cooling
I
F
= 1 A; -di/dt = 100 A/µs; V
R
= 30 V; T
VJ
= 25°C
V
R
= 540 V; I
F
= 30 A; -di
F
/dt = 240 A/µs
L
≤
0.05
µH;
T
VJ
= 100°C
35
16
50
18
①
I
FAVM
rating includes reverse blocking losses at T
VJM
, V
R
= 0.8 V
RRM
, duty cycle d = 0.5
Data according to IEC 60747
IXYS reserves the right to change limits, test conditions and dimensions.
20170315a
© 2017 IXYS All rights reserved
1-3
DSEI 2x 30-10B
DSEI 2x 31-10B
4
80
3
60
max
50
T
VJ
= 100°C
V
R
= 540 V
40
I
F
= 30
60
30
15
A
A
A
A
T
VJ
= 100°C
V
R
= 540 V
max
I
F
40
Q
r
T
VJ
= 150°C
100°C
25°C
2
[A]
20
[µC]
1
I
F
= 30 A
60 A
30 A
15 A
I
RM
30
[A]
20
typ.
10
typ.
0
0
1
2
3
0
1
10
100
1000
0
0
100 200 300 400 500 600
V
F
[V]
Fig. 1 Typ. forward current
versus voltage drop
-di
F
/dt [A/µs]
Fig. 2 Typ. reverse recov. charge
Q
r
versus -di
F
/dt
-di
F
/dt [A/µs]
Fig. 3 Typ. peak reverse current
I
RM
versus -di
F
/dt
50
1000
1.4
0.8
T
VJ
= 100°C
V
R
= 540 V
1.2
0.6
1.0
40
800
t
rr
0.4
max
Kf
0.8
I
RM
Q
r
0.4
0
40
80
120
160
[µs]
0.2
I
F
= 30
60
30
15
A
A
A
A
V
FR
30
[V]
20
600
T
VJ
= 125°C
I
F
= 30 A
t
fr
t
fr
400
[ns]
200
0.6
10
V
FR
0.0
0
typ.
0
0
0
100 200 300 400 500 600
100 200 300 400 500 600
T
VJ
[°C]
Fig. 4 Dynamic parameters vs.
junction temperature
2
1
-diF /dt [A/µs]
Fig. 5 Typ. recovery time
versus -di
F
/dt
diF /dt [A/µs]
Fig. 6 Typ. peak forward voltage
versus di
F
/dt
Z
thJC
0.1
[k/W]
0.01
0.0001
0.001
0.01
0.1
1
10
t [s]
Fig. 7 Transient thermal impedance junction to case
IXYS reserves the right to change limits, test conditions and dimensions.
20170315a
© 2017 IXYS All rights reserved
3-3
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