DSEI 2x30-12P
Fast Recovery
Epitaxial Diode (FRED)
I
FAVM
= 2x28 A
V
RRM
= 1200 V
t
rr
= 40 ns
V
RSM
V
1200
V
RRM
V
1200
Type
DSEI 2x 30-12P
D5
Symbol
I
FRMS
I
FAVM
①
I
FRM
I
FSM
T
VJ
T
VJM
T
stg
P
tot
V
ISOL
M
d
Weight
Symbol
I
R
Conditions
T
C
= 25°C
50/60 Hz, RMS
I
ISOL
≤
1 mA
Mounting torque (M4)
t = 1 min
t=1s
Conditions
Maximum Ratings (per diode)
70
28
375
200
A
A
A
A
Features
•
•
•
•
•
•
T
VJ
= 45°C; t = 10 ms (50 Hz), sine
-40...+150
150
-40...+150
100
ne
w
0.05
40
16
1.5 - 2.0
14 - 18
18
fo
r
Characteristic Values (per diode)
typ.
max.
750
250
7
2.20
2.55
1.65
18.2
1.25
50
18
min. 11.2
min. 11.2
max. 50
µA
µA
mA
V
V
V
mΩ
K/W
K/W
ns
A
mm
mm
m/s²
T
VJ
= 25°C V
R
= V
RRM
T
VJ
= 25°C V
R
= 0.8 • V
RRM
T
VJ
= 125°C V
R
= 0.8 • V
RRM
I
F
= 30 A;
V
F
V
T0
r
T
R
thJC
R
thCK
t
rr
I
RM
d
S
d
A
a
No
For power-loss calculations only
T
VJ
= T
VJM
I
F
= 1 A; -di/dt = 100 A/µs
V
R
= 30 V; T
VJ
= 25°C
V
R
= 540 V; I
F
= 30 A; -di
F
/dt = 240 A/µs
L
≤
0.05 µH; T
VJ
= 100°C
Creeping distance on surface
Creeping distance in air
Allowable acceleration
t
T
VJ
= 150°C
T
VJ
= 25°C
①
I
FAVM
rating includes reverse blocking losses at T
VJM
, V
R
= 0.8 V
RRM
, duty cycle d = 0.5
Data according to IEC 60747
IXYS reserves the right to change limits, test conditions and dimensions
20070731a
© 2007 IXYS All rights reserved
de
s
°C
°C
°C
W
2500
3000
V~
V~
Nm
lb.in.
g
ig
T
VJ
= T
VJM
T
C
= 50°C; rectangular; d = 0.5
t
P
< 10 µs; rep. rating; pulse width limited by T
VJM
2 independent FRED in 1 package
Isolation voltage 3000 V~
Planar passivated chips
Leads suitable for PC board soldering
Very short recovery time
Soft recovery behaviour
Applications
• Antiparallel diode for high frequency
switching devices
• Anti saturation diode
• Snubber diode
• Free wheeling diode in converters
and motor control circuits
• Rectifiers in switch mode power
supplies (SMPS)
• Inductive heating and melting
• Uninterruptible power supplies (UPS)
• Ultrasonic cleaners and welders
Advantages
• Easy to mount with two screws
• Space and weight savings
• Improved temperature and power
cycling capability
• Low noise switching
• Small and light weight
Recommended replacement:
DSEI 2x31-12P, DSEI 2x31-12B
n
1-2
DSEI 2x30-12P
70
A
60
50
I
F
40
30
20
10
0
0
1
V
F
2
3
V
4
1
0
1
10
-di
F
/dt
100 A/µs 1000
4
T
VJ
=25°C
T
VJ
=100°C
T
VJ
=150°C
Q
r
3
2
max.
typ.
6
T
VJ
=100°C
µC V = 540V
R
5
I
F
=30A
I
F
=60A
I
F
=30A
I
F
=15A
50
A
40
I
RM
T
VJ
=100°C
V
R
= 540V
I
F
=30A
I
F
=60A
I
F
=30A
I
F
=15A
max.
30
20
typ.
10
0
0
200
-di
F
/dt
400
A/µs
600
D5
Fig. 1 Forward current
versus voltage drop.
Fig. 2 Recovery charge versus -di
F
/dt.
Fig. 3 Peak reverse current versus
-di
F
/dt.
60
V
50
40
30
20
t
fr
10
0
0
200
di
F
/dt
400 A/µs 600
T
VJ
=125°C
I
F
=30A
200
0
1200
ns
1000
V
FR
800
t
fr
600
400
1.4
1.2
1.0
K
f
0.8
0.6
1.0
µs
0.8
T
VJ
=100°C
V
R
=540V
I
RM
t
rr
max.
0.6
Q
R
0.4
0.2
0.0
0
40
T
J
80
120 °C 160
0.4
0.2
0.0
r
fo
Fig. 4 Dynamic parameters versus
junction temperature.
Fig. 5 Recovery time versus -di
F
/dt.
ne
w
typ.
0
200
-di
F
/dt
400
Fig. 7 Transient thermal impedance junction to case.
No
t
de
s
I
F
=30A
I
F
=60A
I
F
=30A
I
F
=15A
V
FR
A/µs 600
ig
Fig. 6 Peak forward voltage
versus di
F
/dt.
Dimensions in mm (1mm = 0.0394“)
n
20070731a
© 2007 IXYS All rights reserved
2-2
京公网安备 11010802033920号
EEWORLD
