DSEP6-06AS
HiPerFRED
V
RRM
I
FAV
t
rr
=
=
=
600 V
6A
20 ns
High Performance Fast Recovery Diode
Low Loss and Soft Recovery
Single Diode
Part number
DSEP6-06AS
Marking on Product: 6P060AS
Backside: cathode
3
1
Features / Advantages:
●
Planar passivated chips
●
Very low leakage current
●
Very short recovery time
●
Improved thermal behaviour
●
Very low Irm-values
●
Very soft recovery behaviour
●
Avalanche voltage rated for reliable operation
●
Soft reverse recovery for low EMI/RFI
●
Low Irm reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating switch
Applications:
●
Antiparallel diode for high frequency
switching devices
●
Antisaturation diode
●
Snubber diode
●
Free wheeling diode
●
Rectifiers in switch mode power
supplies (SMPS)
●
Uninterruptible power supplies (UPS)
Package:
TO-252 (DPak)
●
Industry standard outline
●
RoHS compliant
●
Epoxy meets UL 94V-0
Disclaimer Notice
Information furnished is believed to be accurate and reliable. However, users should independently
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,
and may not be used in, all applications. Read complete Disclaimer Notice at
www.littelfuse.com/disclaimer-electronics.
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20190220b
© 2019 IXYS all rights reserved
DSEP6-06AS
Fast Diode
Symbol
V
RSM
V
RRM
I
R
V
F
Definition
Conditions
T
VJ
= 25°C
T
VJ
= 25°C
T
VJ
= 25°C
T
VJ
= 150°C
T
VJ
= 25°C
T
VJ
= 150 °C
T
VJ
= 175 °C
d = 0.5
T
VJ
= 175 °C
1.00
34
0.50
T
C
= 25°C
t = 10 ms; (50 Hz), sine; V
R
= 0 V
V
R
= 400 V f = 1 MHz
I
F
=
t
rr
reverse recovery time
Ratings
min.
typ.
max. Unit
600
V
600
50
0.2
2.03
2.22
1.34
1.55
6
V
µA
mA
V
V
V
V
A
V
mΩ
K/W
55
40
5
3
5
20
80
W
A
pF
A
A
ns
ns
max. non-repetitive reverse blocking voltage
max. repetitive reverse blocking voltage
reverse current, drain current
V
R
= 600 V
V
R
= 600 V
I
F
=
I
F
=
I
F
=
I
F
=
6A
12 A
6A
12 A
forward voltage drop
I
FAV
V
F0
r
F
R
thJC
R
thCH
P
tot
I
FSM
C
J
I
RM
average forward current
T
C
= 150 °C
rectangular
threshold voltage
slope resistance
for power loss calculation only
thermal resistance junction to case
thermal resistance case to heatsink
total power dissipation
max. forward surge current
junction capacitance
max. reverse recovery current
2.8 K/W
T
VJ
= 45°C
T
VJ
= 25°C
T
VJ
= 25 °C
T
VJ
= 100 °C
T
VJ
= 25 °C
T
VJ
= 100 °C
6 A; V
R
= 300 V
-di
F
/dt = 200 A/µs
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20190220b
© 2019 IXYS all rights reserved
DSEP6-06AS
Package
Symbol
I
RMS
T
VJ
T
op
T
stg
Weight
F
C
mounting force with clip
TO-252 (DPak)
Definition
RMS current
virtual junction temperature
operation temperature
storage temperature
Ratings
Conditions
per terminal
min.
-55
-55
-55
typ.
max.
20
175
150
150
Unit
A
°C
°C
°C
g
N
0.3
20
60
Product Marking
Logo
Part number
IXYS
abcdefg
Z YY
WW
Assembly Line
Date Code
Ordering
Standard
Alternative
Ordering Number
DSEP6-06AS-TRL
DSEP6-06AS-TUB
Marking on Product
6P060AS
6P060AS
Delivery Mode
Tape & Reel
Tube
Quantity
2500
70
Code No.
509806
524993
Similar Part
DSEP6-06BS
Package
TO-252AA (DPak)
Voltage class
600
Equivalent Circuits for Simulation
I
V
0
R
0
threshold voltage
slope resistance *
Fast
Diode
* on die level
T
VJ
= 175 °C
V
0 max
R
0 max
1
30
V
mΩ
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20190220b
© 2019 IXYS all rights reserved
DSEP6-06AS
Outlines TO-252 (DPak)
3
1
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20190220b
© 2019 IXYS all rights reserved
DSEP6-06AS
Fast Diode
10
1000
T
VJ
= 100°C
V
R
= 300V
8
T
VJ
=150°C
T
VJ
=100°C
T
VJ
= 25°C
800
20
30
T
VJ
= 100°C
V
R
= 300V
I
F
6
Q
r
600
[nC]
400
[A]
4
I
F
= 12A
I
F
= 6A
I
F
= 3A
I
RM
[A]
10
I
F
= 12 A
I
F
= 6 A
I
F
= 3 A
2
200
0
0.0
0.5
1.0
1.5
2.0
0
100
0
1000
0
200
400
600
800
1000
V
F
[V]
Fig. 1 Forward current
I
F
versus V
F
2.0
110
-di
F
/dt [A/μs]
Fig. 2 Typ. reverse recov. charge
Q
r
versus -di
F
/dt
20
-di
F
/dt [A/μs]
Fig. 3 Typ. peak reverse current
I
RM
versus -di
F
/dt
1.2
T
VJ
= 100°C
I
F
= 6A
15
0.9
T
VJ
= 100°C
V
R
= 300 V
1.6
100
I
F
= 12 A
I
F
= 6 A
I
F
= 3 A
1.2
t
rr
90
[ns]
80
V
FR
10
K
f
0.8
I
RM
t
fr
0.6
[V]
5
[μs]
0.3
V
FR
t
fr
0.4
Q
r
0.0
0
40
80
120
160
70
60
0
200
400
600
800
1000
0
0
200
400
600
800
0.0
1000
T
VJ
[°C]
Fig. 4 Typ. dynamic parameters
Q
r
, I
RM
versus T
VJ
-di
F
/dt [A/μs]
Fig. 5 Recovery time
t
rr
versus -di
F
/dt
-di
F
/dt [A/μs]
Fig. 6 Typ. peak forward voltage
V
FR
and tfr versus di
F
/dt
10
1
Z
thJC
0.1
[K/W]
0.01
0.001
0.00001
0.0001
0.001
0.01
0.1
1
t [s]
Fig. 7 Transient thermal resistance junction to case
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20190220b
© 2019 IXYS all rights reserved
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