DSS 6-0045AS
Power Schottky Rectifier
I
FAV
= 6 A
V
RRM
= 45 V
V
F
= 0.5 V
V
RSM
V
45
V
RRM
V
45
Type
marking
on product
A
C
TO-252 AA
DSS 6-0045AS
6Y045AS
A
A
C (TAB)
A = Anode, C = Cathode , TAB = Cathode
Symbol
I
FRMS
I
FAV
I
FSM
E
AS
I
AR
(dv/dt)
cr
T
VJ
T
VJM
T
stg
P
tot
Weight
Conditions
T
C
= 165°C; rectangular, d = 0.5
T
VJ
= 45°C; t
p
= 10 ms (50 Hz), sine
I
AS
= 13 A; L = 180 µH; T
VJ
= 25°C; non repetitive
V
A
=1.5 • V
RRM
typ.; f=10 kHz; repetitive
Maximum Ratings
20
6
80
24
1.3
1000
-55...+175
175
-55...+150
A
A
A
mJ
A
V/µs
°C
°C
°C
W
g
Features
• International standard package
• Very low V
F
• Extremely low switching losses
• Low I
RM
-values
• Epoxy meets UL 94V-0
Applications
• Rectifiers in switch mode power
supplies (SMPS)
• Free wheeling diode in low voltage
converters
T
C
= 25°C
typical
50
0.3
Symbol
I
R
V
F
Conditions
T
VJ
= 25°C V
R
= V
RRM
T
VJ
= 125°C V
R
= V
RRM
I
F
= 6 A;
I
F
= 6 A;
I
F
= 12 A;
T
VJ
= 125°C
T
VJ
= 25°C
T
VJ
= 125 °C
Characteristic Values
typ.
max.
0.3
2.5
0.50
0.63
0.59
3.0
mA
mA
V
V
V
K/W
Advantages
• High reliability circuit operation
• Low voltage peaks for reduced
protection circuits
• Low noise switching
• Low losses
Dimensions see Outlines.pdf
R
thJC
Pulse test:
Pulse Width = 5 ms, Duty Cycle < 2.0 %
Data according to IEC 60747 and per diode unless otherwise specified
IXYS reserves the right to change limits, Conditions and dimensions.
328
1
-
2
© 2003 IXYS All rights reserved
DSS 6-0045AS
100
A
I
F
I
R
100
mA
10
pF
T
VJ
=175°C
1000
C
T
1
150°C
125°C
10
T
VJ
=
175°C
150°C
125°C
25°C
0.1
100°C
0.01
75°C
50°C
D2
T
VJ
= 25°C
0.001
0.0001
25°C
1
.0
100
0
10
20
30
40 V 50
V
R
0
10
20
30
40 V 50
V
R
0.2
0.4
0.6
V
F
0.8 V 1.0
Fig. 1 Maximum forward voltage
drop characteristics
25
A
20
I
F(AV)
15
d = 0.5
DC
Fig. 2 Typ. value of reverse current I
R
versus reverse voltage V
R
14
W
12
10
8
6
4
d=
DC
0.5
0.33
0.25
0.17
0.08
Fig. 3 Typ. junction capacitance C
T
versus reverse voltage V
R
10000
P
(AV)
A
I
FSM
1000
10
5
2
0
0
50
100
T
C
150 °C 200
0
0
5
10
I
F(AV)
15
A
100
10
100
1000 µs 10000
t
P
Fig. 4 Average forward current I
F(AV)
versus case temperature T
C
10
K/W
Z
thJC
1
D = 0.5
0.33
0.25
0.17
0.08
Single Pulse
Fig. 5 Forward power loss
characteristics
0.1
0.01
0.0001
DSS 6-0045AS
0.001
0.01
0.1
1
t
s 10
Fig. 6 Transient thermal impedance junction to case at various duty cycles
Note: All curves are per diode
328
© 2003 IXYS All rights reserved
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