Power Field-Effect Transistor, 11.6A I(D), 200V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, I2PAK-3
| Parameter Name | Attribute value |
| Is it Rohs certified? | incompatible |
| Maker | Fairchild |
| Parts packaging code | TO-262 |
| package instruction | I2PAK-3 |
| Contacts | 3 |
| Reach Compliance Code | compliant |
| ECCN code | EAR99 |
| Avalanche Energy Efficiency Rating (Eas) | 210 mJ |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 200 V |
| Maximum drain current (Abs) (ID) | 11.6 A |
| Maximum drain current (ID) | 11.6 A |
| Maximum drain-source on-resistance | 0.28 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 code | TO-262AA |
| JESD-30 code | R-PSIP-T3 |
| JESD-609 code | e0 |
| Number of components | 1 |
| Number of terminals | 3 |
| Operating mode | ENHANCEMENT MODE |
| Maximum operating temperature | 150 °C |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | IN-LINE |
| Polarity/channel type | N-CHANNEL |
| Maximum power dissipation(Abs) | 90 W |
| Maximum pulsed drain current (IDM) | 46.4 A |
| Certification status | Not Qualified |
| surface mount | NO |
| Terminal surface | Tin/Lead (Sn/Pb) |
| Terminal form | THROUGH-HOLE |
| Terminal location | SINGLE |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
"
!
!
$
!
%
!
1
'. 2
'.2
"
+
+
<
<
!!$
5
=
=
% " @
=
% "
京公网安备 11010802033920号
EEWORLD
