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Datasheet> All Categories > Discrete semiconductor> The transistor> FQD13N06LTM
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FQD13N06LTM

Description
11A, 60V, 0.145ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3
CategoryDiscrete semiconductor    The transistor   
File Size1MB，12 Pages
ManufacturerRochester Electronics
Websitehttps://www.rocelec.com/
Environmental Compliance  
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11A, 60V, 0.145ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3

FQD13N06LTM Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerRochester Electronics
Parts packaging codeTO-252
package instructionDPAK-3
Contacts3
Reach Compliance Codeunknown
Avalanche Energy Efficiency Rating (Eas)90 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage60 V
Maximum drain current (ID)11 A
Maximum drain-source on-resistance0.145 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-252
JESD-30 codeR-PSSO-G2
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)44 A
Certification statusCOMMERCIAL
surface mountYES
Terminal surfaceMATTE TIN
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperature30
transistor applicationsSWITCHING
Transistor component materialsSILICON

FQD13N06LTM Preview

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FQD13N06L / FQU13N06L
May 2001
QFET
FQD13N06L / FQU13N06L
60V LOGIC N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for low voltage applications such as automotive, DC/
DC converters, and high efficiency switching for power
management in portable and battery operated products.
TM
Features
•
•
•
•
•
•
•
11A, 60V, R
DS(on)
= 0.115Ω @V
GS
= 10 V
Low gate charge ( typical 4.8 nC)
Low Crss ( typical 17 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
175°C maximum junction temperature rating
D
D
!
"
G
!
G
S
! "
"
"
D-PAK
FQD Series
I-PAK
G D S
FQU Series
!
S
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
T
C
= 25°C unless otherwise noted
Parameter
Drain-Source Voltage
- Continuous (T
C
= 25°C)
Drain Current
- Continuous (T
C
= 100°C)
Drain Current
- Pulsed
(Note 1)
FQD13N06L / FQU13N06L
60
11
7
44
±
20
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/°C
°C
°C
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
A
= 25°C) *
Power Dissipation (T
C
= 25°C)
90
11
2.8
7.0
2.5
28
0.22
-55 to +150
300
T
J
, T
STG
T
L
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Characteristics
Symbol
R
θJC
R
θJA
R
θJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient *
Thermal Resistance, Junction-to-Ambient
Typ
--
--
--
Max
4.5
50
110
Units
°C/W
°C/W
°C/W
* When mounted on the minimum pad size recommended (PCB Mount)
©2001 Fairchild Semiconductor Corporation
Rev. A1. May 2001
FQD13N06L / FQU13N06L
Electrical Characteristics
Symbol
Parameter
T
C
= 25°C unless otherwise noted
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV
DSS
∆BV
DSS
/
∆T
J
I
DSS
I
GSSF
I
GSSR
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
V
GS
= 0 V, I
D
= 250
µA
I
D
= 250
µA,
Referenced to 25°C
V
DS
= 60 V, V
GS
= 0 V
V
DS
= 48 V, T
C
= 150°C
V
GS
= 20 V, V
DS
= 0 V
V
GS
= -20 V, V
DS
= 0 V
60
--
--
--
--
--
--
0.05
--
--
--
--
--
--
1
10
100
-100
V
V/°C
µA
µA
nA
nA
On Characteristics
V
GS(th)
R
DS(on)
g
FS
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
V
DS
= V
GS
, I
D
= 250
µA
V
GS
= 10 V, I
D
= 5.5 A
V
GS
= 5 V, I
D
= 5.5 A
V
DS
= 25 V, I
D
= 5.5 A
(Note 4)
1.0
--
--
--
--
0.092
0.115
6
2.5
0.115
0.145
--
V
Ω
S
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
DS
= 25 V, V
GS
= 0 V,
f = 1.0 MHz
--
--
--
270
95
17
350
125
23
pF
pF
pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DS
= 48 V, I
D
= 13.6 A,
V
GS
= 5 V
(Note 4, 5)
V
DD
= 30 V, I
D
= 6.8 A,
R
G
= 25
Ω
(Note 4, 5)
--
--
--
--
--
--
--
8
90
20
40
4.8
1.6
2.7
25
190
50
90
6.4
--
--
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
I
S
I
SM
V
SD
t
rr
Q
rr
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
V
GS
= 0 V, I
S
= 11 A
Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V
GS
= 0 V, I
S
= 13.6 A,
dI
F
/ dt = 100 A/µs
(Note 4)
--
--
--
--
--
--
--
--
45
45
11
44
1.5
--
--
A
A
V
ns
nC
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 870µH, I
AS
= 11A, V
DD
= 25V, R
G
= 25
Ω,
Starting T
J
= 25°C
3. I
SD
≤
13.6A, di/dt
≤
300A/µs, V
DD
≤
BV
DSS,
Starting T
J
= 25°C
4. Pulse Test : Pulse width
≤
300µs, Duty cycle
≤
2%
5. Essentially independent of operating temperature
©2001 Fairchild Semiconductor Corporation
Rev. A1. May 2001
FQD13N06L / FQU13N06L
Typical Characteristics
10
1
I
D
, Drain Current [A]
I
D
, Drain Current [A]
V
GS
10.0 V
8.0 V
6.0 V
5.0 V
4.5 V
4.0 V
3.5 V
Bottom : 3.0 V
Top :
10
1
10
0
150
℃
25
℃
-55
℃
※
Notes :
1. V
DS
= 25V
2. 250μ s Pulse Test
10
0
※
Notes :
1. 250μ s Pulse Test
2. T
C
= 25℃
10
-1
10
0
10
1
10
-1
0
2
4
6
8
10
V
DS
, Drain-Source Voltage [V]
V
GS
, Gate-Source Voltage [V]
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
300
Drain-Source On-Resistance
10
200
1
R
DS(ON)
[m
Ω
],
V
GS
= 5V
V
GS
= 10V
I
DR
, Reverse Drain Current [A]
100
10
0
※
Note : T
J
= 25℃
150℃
-1
25℃
※
Notes :
1. V
GS
= 0V
2. 250μ s Pulse Test
0
0
10
20
30
40
10
I
D
, Drain Current [A]
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
V
SD
, Source-Drain voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
800
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
12
10
V
DS
= 30V
V
DS
= 48V
V
GS
, Gate-Source Voltage [V]
600
C
oss
8
Capacitance [pF]
C
iss
400
※
Notes :
1. V
GS
= 0 V
2. f = 1 MHz
6
4
200
C
rss
2
※
Note : I
D
= 13.6A
0
0
-1
10
0
2
4
6
8
10
10
0
10
1
V
DS
, Drain-Source Voltage [V]
Q
G
, Total Gate Charge [nC]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
©2001 Fairchild Semiconductor Corporation
Rev. A1. May 2001
FQD13N06L / FQU13N06L
Typical Characteristics
(Continued)
1.2
2.5
BV
DSS
, (Normalized)
Drain-Source Breakdown Voltage
1.0
0.9
※
Notes :
1. V
GS
= 0 V
2. I
D
= 250
μ
A
R
DS(ON)
, (Normalized)
Drain-Source On-Resistance
1.1
2.0
1.5
1.0
0.5
※
Notes :
1. V
GS
= 10 V
2. I
D
= 5.5 A
0.8
-100
-50
0
50
100
o
150
200
0.0
-100
-50
0
50
100
o
150
200
T
J
, Junction Temperature [ C]
T
J
, Junction Temperature [ C]
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
12
2
10
Operation in This Area
is Limited by R
DS(on)
10
10
1
1 ms
10 ms
DC
I
D
, Drain Current [A]
I
D
, Drain Current [A]
100
µ
s
8
6
4
10
0
※
Notes :
1. T
C
= 25 C
2. T
J
= 150 C
3. Single Pulse
o
o
2
10
-1
10
-1
10
0
10
1
10
2
0
25
50
75
100
125
150
V
DS
, Drain-Source Voltage [V]
T
C
, Case Temperature [
℃
]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs. Case Temperature
(t), T h e rm a l R e s p o n s e
D = 0 .5
0
10
0 .2
0 .1
0 .0 5
0 .0 2
0 .0 1
s in g le p u ls e
※
N otes :
1 . Z
θ
J C
( t ) = 4 . 5
℃
/W M a x .
2 . D u t y F a c t o r , D = t
1
/t
2
3 . T
J M
- T
C
= P
D M
* Z
θ
J C
( t )
P
DM
t
1
t
2
JC
10
-1
Z
θ
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t
1
, S q u a r e W a v e P u ls e D u r a tio n [s e c ]
Figure 11. Transient Thermal Response Curve
©2001 Fairchild Semiconductor Corporation
Rev. A1. May 2001
More (Only the first 5 pages are displayed. Please Download Datasheet to view the full content.) >

FQD13N06LTM Related Products

FQD13N06LTM FQD13N06LTF
Description 11A, 60V, 0.145ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3 11A, 60V, 0.145ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3
Is it lead-free? Lead free Lead free
Is it Rohs certified? conform to conform to
Maker Rochester Electronics Rochester Electronics
Parts packaging code TO-252 TO-252
package instruction DPAK-3 DPAK-3
Contacts 3 3
Reach Compliance Code unknown unknown
Avalanche Energy Efficiency Rating (Eas) 90 mJ 90 mJ
Shell connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 60 V 60 V
Maximum drain current (ID) 11 A 11 A
Maximum drain-source on-resistance 0.145 Ω 0.145 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code TO-252 TO-252
JESD-30 code R-PSSO-G2 R-PSSO-G2
JESD-609 code e3 e3
Humidity sensitivity level 1 1
Number of components 1 1
Number of terminals 2 2
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) 260 260
Polarity/channel type N-CHANNEL N-CHANNEL
Maximum pulsed drain current (IDM) 44 A 44 A
Certification status COMMERCIAL COMMERCIAL
surface mount YES YES
Terminal surface MATTE TIN MATTE TIN
Terminal form GULL WING GULL WING
Terminal location SINGLE SINGLE
Maximum time at peak reflow temperature 30 NOT SPECIFIED
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON

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