DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ
PA1918
P-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DESCRIPTION
The
µ
PA1918 is a switching device, which can be driven
directly by a 4.0 V power source.
This device features a low on-state resistance and excellent
switching characteristics, and is suitable for applications
such as power switch of portable machine and so on.
PACKAGE DRAWING (Unit: mm)
0.32
+0.1
–0.05
0.65
–0.15
+0.1
0.16
+0.1
–0.06
2.8 ±0.2
6
5
4
1.5
FEATURES
•
4.0 V drive available
•
Low on-state resistance
R
DS(on)1
= 143 mΩ MAX. (V
GS
= –10 V, I
D
= –2.0 A)
R
DS(on)2
= 179 mΩ MAX. (V
GS
= –4.5 V, I
D
= –2.0 A)
R
DS(on)3
= 190 mΩ MAX. (V
GS
= –4.0 V, I
D
= –2.0 A)
0 to 0.1
1
2
3
0.95
0.95
0.65
0.9 to 1.1
1.9
2.9 ±0.2
ORDERING INFORMATION
PART NUMBER
PACKAGE
SC-95 (Mini Mold Thin Type)
1, 2, 5, 6 : Drain
3
: Gate
4
: Source
µ
PA1918TE
Marking: TS
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC) (T
A
= 25°C)
Drain Current (pulse)
Note1
EQUIVALENT CIRCUIT
–60
m20
m3.5
m14
0.2
2.0
150
–55 to +150
V
V
A
A
W
W
°C
°C
Gate
Protection
Diode
Gate
Body
Diode
Drain
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T1
P
T2
T
ch
T
stg
Total Power Dissipation
Total Power Dissipation
Channel Temperature
Storage Temperature
Notes 1.
PW
≤
10
µ
s, Duty Cycle
≤
1%
2.
Mounted on FR-4 board, t
≤
5 sec.
Note2
Source
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated
voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No.
G15926EJ1V0DS00 (1st edition)
Date Published June 2002 NS CP(K)
Printed in Japan
©
2002
µ
PA1918
ELECTRICAL CHARACTERISTICS (T
A
= 25°C)
CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate Cut-off Voltage
Forward Transfer Admittance
Drain to Source On-state Resistance
SYMBOL
I
DSS
I
GSS
V
GS(off)
| y
fs
|
R
DS(on)1
R
DS(on)2
R
DS(on)3
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
G
Q
GS
Q
GD
V
F(S-D)
V
DD
= –48 V
V
GS
= –10 V
I
D
= –3.5 A
I
F
= 3.5 A, V
GS
= 0 V
TEST CONDITIONS
V
DS
= –60 V, V
GS
= 0 V
V
GS
=
m
20 V, V
DS
= 0 V
V
DS
= –10 V, I
D
= –1.0 mA
V
DS
= –10 V, I
D
= –2.0 A
V
GS
= –10 V, I
D
= –2.0 A
V
GS
= –4.5 V, I
D
= –2.0 A
V
GS
= –4.0 V, I
D
= –2.0 A
V
DS
= –10 V
V
GS
= 0 V
f = 1.0 MHz
V
DD
= –30 V, I
D
= –2.0 A
V
GS
= –10 V
R
G
= 10
Ω
–1.5
3.0
–1.9
6.2
114
134
142
666
120
58
12
5
58
27
12
1.5
3.5
0.87
143
179
190
MIN.
TYP.
MAX.
–1.0
UNIT
µ
A
µ
A
V
S
mΩ
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
m
10
–2.5
TEST CIRCUIT 1 SWITCHING TIME
TEST CIRCUIT 2 GATE CHARGE
D.U.T.
D.U.T.
R
L
V
GS
PG.
R
G
Wave Form
V
GS(−)
0
10%
V
GS
90%
I
G
=
−2
mA
50
Ω
R
L
V
DD
V
DD
PG.
90%
V
DS(−)
90%
10%
10%
V
GS(−)
0
τ
τ
= 1
µ
s
Duty Cycle
≤
1%
V
DS
V
DS
Wave Form
0
t
d(on)
t
on
t
r
t
d(off)
t
off
t
f
2
Data Sheet G15926EJ1V0DS
µ
PA1918
TYPICAL CHARACTERISTICS (T
A
= 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
120
2.25
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
dT - Percentage of Rated Power - %
100
80
60
40
20
0
0
25
50
75
100
125
150
175
P
T
- Total Power Dissipation - W
2
1.75
1.5
1.25
1
0.75
0.5
0.25
0
0
25
50
75
100
125
150
175
T
A
- Ambient Temperature -
°C
FORWARD BIAS SAFE OPERATING AREA
T
A
- Ambient Temperature -
°C
-100
R
DS(on)
Limited
(V
GS
=
−10
V)
I
D
- Drain Current - A
PW = 100
µs
I
D(pulse)
1 ms
-10
-1
I
D(DC)
10 ms
100 ms
5s
-0.1
Single Pulse
Mounted on FR-4 board of
50 mm × 50 mm × 1.6 mm
-1
-10
-100
-0.01
-0.1
V
DS
- Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
r
th(ch-A)
- Transient Thermal Resistance -
°C/W
1000
Single Pulse
W ithout board
100
10
Mounted on FR-4 board of
50 mm × 50 mm × 1.6 mm
1
1m
10 m
100 m
1
10
100
1000
PW - Pulse Width - s
Data Sheet G15926EJ1V0DS
3
µ
PA1918
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
-15
Pulsed
I
D
- Drain Current - A
-100
V
GS
=
−10
V
I
D
- Drain Current - A
-12
−4.5
V
−4.0
V
-6
-10
-1
-0.1
-0.01
-0.001
-0.0001
V
DS
=
−10
V
Pulsed
T
A
= 125°C
75°C
25°C
−25°C
-9
-3
0
0
-0.5
-1
-1.5
-2
V
DS
- Drain to Source Voltage - V
0
-1
-2
-3
-4
-5
V
GS
- Gate to Source Voltage - V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
| y
fs
| - Forward Transfer Admittance - S
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
-2.4
V
GS(off)
- Gate Cut-off Voltage - V
100
V
DS
=
−10
V
Pulsed
10
T
A
=
−25°C
25°C
75°C
125°C
V
DS
=
−10
V
I
D
=
−1.0
mA
-2
1
-1.6
0.1
-1.2
-50
0
50
100
150
T
ch
- Channel Temperature -
°C
0.01
-0.01
-0.1
-1
-10
-100
I
D
- Drain Current - A
R
DS(on)
- Drain to Source On-state Resistance - mΩ
300
V
GS
=
−10
V
Pulsed
250
T
A
= 125°C
200
75°C
150
25°C
100
−25°C
50
-0.01
R
DS(on)
- Drain to Source On-state Resistance - mΩ
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
300
V
GS
=
−4.5
V
Pulsed
T
A
= 125°C
250
200
75°C
25°C
−25°C
150
100
-0.1
-1
-10
-100
50
-0.01
-0.1
-1
-10
-100
I
D
- Drain Current - A
I
D
- Drain Current - A
Data Sheet G15926EJ1V0DS
4
µ
PA1918
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
R
DS(on)
- Drain to Source On-state Resistance - mΩ
R
DS(on)
- Drain to Source On-state Resistance - mΩ
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
300
V
GS
=
−4.0
V
Pulsed
250
75°C
200
25°C
150
−25°C
100
T
A
= 125°C
250
Pulsed
200
150
I
D
=
−2.0
A
100
50
-0.01
50
0
-5
-10
-15
-20
V
GS
- Gate to Source Voltage - V
-0.1
-1
-10
-100
I
D
- Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
R
DS(on)
- Drain to Source On-state Resistance - mΩ
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
250
C
iss
, C
oss
, C
rss
- Capacitance - pF
10000
I
D
=
−2.0
A
Pulsed
V
GS
= 0 V
f = 1.0 MHz
200
V
GS
=
−4.0
V
1000
C
iss
150
−4.5
V
100
−10
V
100
C
rss
C
oss
50
-50
0
50
100
150
T
ch
- Channel Temperature -
°C
10
-0.1
-1
-10
-100
V
DS
- Drain to Source Voltage - V
SWITCHING CHARACTERISTICS
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
1000
V
GS
- Gate to Source Voltage - V
t
d(on)
, t
r
, t
d(off)
, t
f
- Switching Time - ns
V
DD
=
−30
V
V
GS
=
−10
V
R
G
= 10
Ω
100
t
d(off)
t
f
10
t
d(on)
t
r
-12
I
D
=
−3.5
A
-10
-8
-6
-4
-2
0
V
DD
=
−48
V
−30
V
−15
V
1
-0.01
-0.1
-1
-10
0
3
6
9
12
15
I
D
- Drain Current - A
Q
G
- Gate Charge - nC
Data Sheet G15926EJ1V0DS
5
PCB Design
京公网安备 11010802033920号
EEWORLD
