DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ
PA2502
N-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DESCRIPTION
The
µ
PA2502, which has a heat spreader, is N-channel
MOS Field Effect Transistor designed for DC/DC converter
and power management applications of notebook computers.
0.65 TYP.
PACKAGE DRAWING (Unit: mm)
•
µ
PA2502 has a thin surface mount package with a heat
spreader. The land size is same as 8-pin TSSOP.
•
Low on-state resistance
R
DS(on)1
= 12.0 mΩ MAX. (V
GS
= 10.0 V, I
D
= 7.0 A)
R
DS(on)2
= 18.0 mΩ MAX. (V
GS
= 4.5 V, I
D
= 7.0 A)
0.25
−0.05
0.10 M
FEATURES
1
2
3
4
+0.1
8
7
6
5
5.8
±0.1
6.4
±0.1
0.17
±0.05
0.8 MAX.
3.15
±0.15
3
±0.1
0.10 S
ORDERING INFORMATION
PART NUMBER
PACKAGE
8PIN HWSON
0.75
±0.15
4.15
±0.2
0.85
±0.15
2.2
±0.2
0
−0
+0.05
•
Low C
iss
: 760 pF TYP. (V
DS
= 10.0 V, V
GS
= 0 V)
1, 2, 3 : Source
4
: Gate
5, 6, 7, 8: Drain
µ
PA2502TM
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC)
Note1
Note2
Note1
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T
T
ch
T
stg
30.0
±20.0
±13.0
±52.0
2.7
150
−55
to +150
13.0
16.9
V
V
A
A
W
°C
°C
A
mJ
Gate
Protection
Diode
Source
Gate
Drain Current (pulse)
EQUIVALENT CIRCUIT
Drain
Total Power Dissipation
Channel Temperature
Storage Temperature
Single Avalanche Current
Single Avalanche Energy
Note3
Note3
I
AS
E
AS
2
Body
Diode
Notes 1.
Mounted on FR-4 board of 25 cm x 1.6 mm, PW
≤
10 sec
2.
PW
≤
10
µ
s, Duty Cycle
≤
1%
3.
Starting T
ch
= 25°C, V
DD
= 15.0 V, R
G
= 25
Ω,
V
GS
= 20.0
→
0 V
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. G16681EJ1V0DS00 (1st edition)
Date Published September 2004 NS CP(K)
Printed in Japan
2004
µ
PA2502
ELECTRICAL CHARACTERISTICS (T
A
= 25°C)
CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate Cut-off Voltage
Forward Transfer Admittance
Note
Note
SYMBOL
I
DSS
I
GSS
V
GS(off)
| y
fs
|
R
DS(on)1
R
DS(on)2
TEST CONDITIONS
V
DS
= 30.0 V, V
GS
= 0 V
V
GS
= ±20.0 V, V
DS
= 0 V
V
DS
= 10.0 V, I
D
= 1.0 mA
V
DS
= 10.0 V, I
D
= 7.0 A
V
GS
= 10.0 V, I
D
= 7.0 A
V
GS
= 4.5 V, I
D
= 7.0 A
V
DS
= 10.0 V
V
GS
= 0 V
f = 1.0 MHz
V
DD
= 15.0 V, I
D
= 7.0 A
V
GS
= 10.0 V
R
G
= 10
Ω
MIN.
TYP.
MAX.
1.0
±10.0
UNIT
µ
A
µ
A
V
S
1.50
5
9.3
13.1
760
300
100
14
3
32
4
2.50
Drain to Source On-state Resistance
12.0
18.0
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Note
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
G
Q
GS
Q
GD
V
F(S-D)
t
rr
Q
rr
V
DD
= 15.0 V
V
GS
= 5.0 V
I
D
= 13.0 A
I
F
= 13.0 A, V
GS
= 0 V
I
F
= 13.0 A, V
GS
= 0 V
di/dt = 100 A/
µ
s
8.5
2.8
3.5
0.84
27
24
Note
Pulsed: PW
≤
350
µ
s, Duty Cycle
≤
2%
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T.
R
G
= 25
Ω
PG.
V
GS
= 20
→
0 V
50
Ω
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
L
V
DD
PG.
R
G
R
L
V
DD
V
GS
V
GS
Wave Form
0
10%
V
GS
90%
V
DS
90%
90%
10%
10%
BV
DSS
I
AS
I
D
V
DD
V
DS
V
GS
0
τ
τ
= 1
µ
s
Duty Cycle
≤
1%
V
DS
V
DS
Wave Form
0
t
d(on)
t
on
t
r
t
d(off)
t
off
t
f
Starting T
ch
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
I
G
= 2 mA
PG.
50
Ω
R
L
V
DD
2
Data Sheet G16681EJ1V0DS
µ
PA2502
TYPICAL CHARACTERISTICS (T
A
= 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
dT - Percentage of Rated Power - %
120
100
80
60
40
20
0
0
25
50
75
100
125
150
175
T
A
- Ambient Temperature -
°C
FORWARD BIAS SAFE OPERATING AREA
1000
100
10
1
0.1
Single pulse
Mounted on FR-4 board of 25 cm
2
x 1.6 mm
R
DS(on)
Limited
(at V
GS
= 10 V)
I
D(pulse)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
3
P
T
- Total Power Dissipation - W
2.5
2
1.5
1
0.5
0
0
25
50
75
100
125
150
175
T
A
- Ambient Temperature -
°C
Mounted on FR-4 board of
25 cm
2
x 1.6 mm, PW
≤
10 sec
I
D
- Drain Current - A
I
D(DC)
PW = 1 ms
10 ms
30 ms
10 s
0.01
0.1
1
10
100
V
DS
- Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
r
th(ch-A)
- Transient Thermal Resistance -
°C/W
1000
100
10
1
Single pulse
Mounted on FR-4 board of 25 cm
2
x 1.6 mm
0.1
1m
10 m
100 m
1
PW - Pulse Width - s
10
100
1000
Data Sheet G16681EJ1V0DS
3
µ
PA2502
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
60
Pulsed
50
I
D
- Drain Current - A
40
30
20
10
0
0
0.2
0.4
0.6
0.8
1
V
DS
- Drain to Source Voltage - V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
| y
fs
| - Forward Transfer Admittance - S
2.4
V
GS(off)
- Gate Cut-off Voltage - V
V
DS
= 10.0 V
I
D
= 1.0 mA
2.0
100
V
DS
= 10.0 V
Pulsed
10
T
A
=
−25°C
25°C
75°C
125°C
I
D
- Drain Current - A
V
GS
= 10.0 V
4.5 V
10
1
0.1
0.01
0.001
1
2
3
4
5
V
GS
- Gate to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
FORWARD TRANSFER CHARACTERISTICS
100
V
DS
= 10.0 V
Pulsed
T
A
= 125°C
75°C
25°C
−25°C
1.6
1
1.2
0.1
0.8
-50
0
50
100
150
T
ch
- Channel Temperature -
°C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
25
Pulsed
20
V
GS
= 4.5 V
15
10
5
0
0.1
1
10
100
I
D
- Drain Current - A
10.0 V
0.01
0.01
0.1
1
10
100
I
D
- Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
25
20
15
10
5
0
0
4
8
12
16
20
V
GS
- Gate to Source Voltage - V
I
D
= 7.0 A
Pulsed
R
DS(on)
- Drain to Source On-state Resistance - mΩ
4
Data Sheet G16681EJ1V0DS
R
DS(on)
- Drain to Source On-state Resistance - mΩ
µ
PA2502
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
25
20
15
10
5
0
-50
0
50
100
150
T
ch
- Channel Temperature - °C
SWITCHING CHARACTERISTICS
1000
V
DS
- Drain to Source Voltage - V
t
d(on)
, t
r
, t
d(off)
, t
f
- Switching Time - ns
V
DD
= 15.0 V
V
GS
= 10.0 V
R
G
= 10
Ω
100
t
d(off)
t
d(on)
10
t
f
t
r
1
0.1
1
10
100
I
D
- Drain Current - A
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
100
I
AS
- Single Avalanche Current - A
I
F
- Diode Forward Current - A
V
GS
= 0 V
Pulsed
10
100
C
iss
, C
oss
, C
rss
- Capacitance - pF
I
D
= 7.0 A
Pulsed
V
GS
= 4.5 V
10.0 V
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
10000
V
GS
= 0 V
f = 1.0 MHz
1000
R
DS(on)
- Drain to Source On-state Resistance - mΩ
C
iss
C
oss
100
C
rss
10
0.1
1
10
100
V
DS
- Drain to Source Voltage - V
DYNAMIC INPUT CHARACTERISTICS
6
I
D
= 13.0 A
5
4
3
2
1
0
0
4
8
12
Q
G
- Gate Charge - nC
SINGLE AVALANCHE CURRENT vs.
INDUCTIVE LOAD
V
DD
= 6.0 V
15.0 V
24.0 V
I
AS
= 13.0 A
10
E
AS
= 16.9 mJ
1
1
0.1
V
DD
= 15.0 V
R
G
= 25
Ω
V
GS
= 20.0
→
0 V
Starting T
ch
= 25°C
0.1
1
10
0.01
0.4
0.6
0.8
1
1.2
V
F(S-D)
- Source to Drain Voltage - V
0.1
0.01
L - Inductive Load - mH
Data Sheet G16681EJ1V0DS
5
京公网安备 11010802033920号
EEWORLD
