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DA4X106U

Description
Mixer Diode, Very High Frequency, Silicon, HALOGEN FREE AND ROHS COMPLIANT, MINI4-G4-B, 4 PIN
CategoryDiscrete semiconductor    diode   
File Size496KB,4 Pages
ManufacturerPanasonic
Websitehttp://www.panasonic.co.jp/semicon/e-index.html
Environmental Compliance  
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DA4X106U Overview

Mixer Diode, Very High Frequency, Silicon, HALOGEN FREE AND ROHS COMPLIANT, MINI4-G4-B, 4 PIN

DA4X106U Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerPanasonic
package instructionR-PDSO-G4
Contacts4
Manufacturer packaging codeMINI4-G4-B
Reach Compliance Codeunknown
ECCN codeEAR99
ConfigurationBRIDGE, 4 ELEMENTS
Maximum diode capacitance15 pF
Diode component materialsSILICON
Diode typeMIXER DIODE
Maximum forward voltage (VF)1.2 V
frequency bandVERY HIGH FREQUENCY
JESD-30 codeR-PDSO-G4
Maximum non-repetitive peak forward current0.5 A
Number of components4
Number of terminals4
Maximum operating temperature150 °C
Maximum output current0.1 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum repetitive peak reverse voltage80 V
Maximum reverse recovery time0.01 µs
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
This product complies with the RoHS Directive (EU 2002/95/EC).
DA4X106U
Silicon epitaxial planar type
For high speed switching circuits
Features
Short reverse recovery time t
rr
Low terminal capacitance C
t
Contributes to miniaturization of sets, reduction of component count.
Eco-friendly Halogen-free package
Package
Code
Mini4-G4-B
Name
Pin
1: Cathode-1, 2
2: Anode-2
Cathode-3
Basic Part Number
DA3X102D + DA3X103E (Bridge)
3: Anode-3, 4
4: Anode-1
Cathode-4
Marking Symbol: 29
Internal Connection
4
3
Packaging
Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard)
Absolute Maximum Ratings
T
a
= 25°C
Parameter
Reverse voltage
Maximum peak reverse voltage
Forward current
Repetitive peak forward current
Non-repetitive peak forward surge current
*
Junction temperature
Storage temperature
Note) *: 1 t = 1 s
Symbol
V
R
V
RM
I
F
I
FRM
I
FSM
T
j
T
stg
Rating
80
80
100
150
500
150
–55 to +150
Unit
V
V
mA
mA
mA
°C
°C
1
2
Electrical Characteristics
T
a
= 25°C±3°C
Parameter
Forward voltage
Reverse voltage
Reverse current
Terminal capacitance
Reverse recovery time
*
Symbol
V
F
V
R
I
R
C
t
t
rr
I
F
= 100 mA
I
R
= 100
µA
V
R
= 80 V
V
R
= 0 V, f = 1 MHz
I
F
= 10 mA, V
R
= 6 V, I
rr
= 0.25
×
I
R
 
80
100
15
10
Conditions
Min
Typ
Max
1.2
Unit
V
V
nA
pF
ns
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 100 MHz
3. *: t
rr
measurement circuit
Bias Application Unit (N-50BU)
Input Pulse
t
r
10%
t
p
t
I
F
Output Pulse
t
rr
t
A
V
R
Wave Form Analyzer
(SAS-8130)
R
i
= 50
90%
t
p
=
2
µs
t
r
=
0.35 ns
δ =
0.05
Pulse Generator
(PG-10N)
R
s
= 50
I
rr
=
0.25
×
I
R
I
F
=
10 mA
V
R
= 6 V
Publication date: June 2010
ZKF00162BED
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