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DH77033-54T10

Description
HF-S BAND, 6pF, 12V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE, PLASTIC PACKAGE-3
CategoryDiscrete semiconductor    diode   
File Size31KB,3 Pages
ManufacturerRakon Limited
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DH77033-54T10 Overview

HF-S BAND, 6pF, 12V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE, PLASTIC PACKAGE-3

DH77033-54T10 Parametric

Parameter NameAttribute value
MakerRakon Limited
package instructionR-PDSO-G3
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
Minimum breakdown voltage12 V
ConfigurationCOMMON ANODE, 2 ELEMENTS
Nominal diode capacitance6 pF
Diode component materialsSILICON
Diode typeVARIABLE CAPACITANCE DIODE
frequency bandHIGH FREQUENCY TO S BAND
JESD-30 codeR-PDSO-G3
Number of components2
Number of terminals3
Maximum operating temperature125 °C
Minimum operating temperature-55 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Varactor Diode ClassificationHYPERABRUPT
TUNING VARACTOR
Plastic package, Surface Mount hyperabrupt tuning varactor
PLASTIC PACKAGE, SURFACE MOUNT HYPERABRUPT
TUNING VARACTOR
Description
This series of silicon tuning varactors consists of hyperabrupt epitaxial devices. They incorporate
a passivated mesa technology. This family is designed for a low cost medium to high volume market that
may be supplied in tape and reel for automated pick and place assembly on surface mount circuit boards.
Application
The DH76000 and DH77000 series hyperabrupt tuning varactor are offered in a large selection of
capacitance range. They provide the highest Q factor (low reverse series resistance). Typical
applications include low noise narrow and moderate frequency bandwidth applications (VCO mainly)
from HF to Microwave frequencies (up to 3 GHz). Other applications are voltage tuned filters, phase
shifters, delay lines...
20 Volt hyperabrupt junction varactors
Characteristics @ Ta=+25° C
Reverse breakdown voltage, Vb = 20 V min. @ 10 µA
Reverse Current, Ir = 200 nA @ 16 V
Total capacitance (pF)
Ct
f = 1 MHz
f=1 MHz
Vr = 4 V
Vr = 12 V
±20 %
typ.
1.2
0.6
1.7
0.8
2.4
1.1
3.5
1.6
4.9
2.2
7.0
3.1
10.0
4.5
15.0
6.6
Temperature ranges:
Operating junction (Tj) : -55° C to +125° C
Storage : -55° C to +150° C
Tuning
ratio
Ct1V/Ct12V Ct1V/Ct20V
f = 1 MHz
f = 1 MHz
typ.
typ.
4.1
4.9
4.4
5.4
4.7
5.8
4.9
6.1
5.0
6.4
5.1
6.5
5.2
6.7
5.2
6.8
Test
conditions
Type
DH76010
DH76015
DH76022
DH76033
DH76047
DH76068
DH76100
DH76150
f = 1 MHz
Vr = 1 V
typ
2.5
3.6
5.2
8.0
11.0
16.0
23.0
35.0
f = 1 MHz
Vr = 20 V
typ.
0.5
0.7
0.9
1.3
1.7
2.4
3.5
5.1
12 Volt hyperabrupt junction varactors
Characteristics @ Ta=+25° C
Reverse breakdown voltage, Vb = 12 V min. @ 10 µA
Reverse Current, Ir = 200 nA @ 8 V
Total capacitance (pF)
Ct
f = 1 MHz
f=1 MHz
Vr = 2.5 V
Vr = 4 V
±20 %
typ.
3.5
4.9
7.0
10.0
15.0
1.9
2.7
3.8
5.5
8.1
Temperature ranges:
Operating junction (Tj) : -55° C to +125° C
Storage : -55° C to +150° C
Tuning
ratio
Ct1V/Ct2.5V Ct1V/Ct4V
f = 1 MHz
f = 1 MHz
typ.
typ.
1.7
1.7
1.7
1.7
1.8
3.1
3.2
3.2
3.2
3.3
Test
conditions
Type
DH77033
DH77047
DH77068
DH77100
DH77150
12-36
Vol. 1
f = 1 MHz
Vr = 1 V
typ
6.0
8.5
12.0
18.0
27.0
SALES OFFICES: VISIT OUR WEB SITE AT
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