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FCH47N60F_F133

Description
47 A, 600 V, 0.073 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AB
Categorysemiconductor    Discrete semiconductor   
File Size194KB,8 Pages
ManufacturerETC2
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FCH47N60F_F133 Overview

47 A, 600 V, 0.073 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AB

FCH47N60F_F133 Parametric

Parameter NameAttribute value
Number of terminals3
Minimum breakdown voltage600 V
Processing package descriptionROHS COMPLIANT, TO-247AB, 3 PIN
Lead-freeYes
EU RoHS regulationsYes
stateACTIVE
packaging shapeRectangle
Package SizeFlange mounting
Terminal formTHROUGH-hole
terminal coatingMATTE Tin
Terminal locationsingle
Packaging MaterialsPlastic/Epoxy
structureSingle WITH BUILT-IN diode
Number of components1
transistor applicationsswitch
Transistor component materialssilicon
Channel typeN channel
field effect transistor technologyMetal-OXIDE SEMICONDUCTOR
operating modeENHANCEMENT
Transistor typeuniversal power supply
Maximum leakage current47 A
Rated avalanche energy1800 mJ
Maximum drain on-resistance0.0730 ohm
Maximum leakage current pulse141 A
FCH47N60F _F133 600V N-Channel MOSFET
SuperFET
FCH47N60F
_F133
600V N-Channel MOSFET
Features
• 650V @T
J
= 150°C
• Typ. R
DS(on)
= 0.062Ω
• Fast Recovery Type ( t
rr
= 240ns)
• Ultra Low Gate Charge (typ. Q
g
= 210nC)
• Low Effective Output Capacitance (typ. C
oss
eff. = 420pF)
• 100% avalanche tested
February
TM
Description
SuperFET
TM
is, Fairchild’s proprietary, new generation of high
voltage MOSFET family that is utilizing an advanced charge
balance mechanism for outstanding low on-resistance and
lower gate charge performance.
This advanced technology has been tailored to minimize
conduction loss, provide superior switching performance, and
withstand extreme dv/dt rate and higher avalanche energy.
Consequently, SuperFET is very suitable for various AC/DC
power conversion in switching mode operation for system
miniaturization and higher efficiency.
D
G
G D
S
TO-247
S
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
T
J,
T
STG
T
L
Drain-Source Voltage
Drain Current
Drain Current
Gate-Source voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(T
C
= 25°C)
- Derate above 25°C
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Parameter
- Continuous (T
C
= 25°C)
- Continuous (T
C
= 100°C)
- Pulsed
(Note 1)
FCH47N60F
600
47
29.7
141
±
30
1800
47
41.7
50
417
3.33
-55 to +150
300
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Thermal Characteristics
Symbol
R
θJC
R
θCS
R
θJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
Typ.
--
0.24
--
Max.
0.3
--
41.7
Unit
°C/W
°C/W
°C/W
©2009 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
FCH47N60F _F133 Rev. A.
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