DISCRETE SEMICONDUCTORS
DATA SHEET
M3D319
BAS716
Low-leakage diode
Product data sheet
2003 Nov 07
NXP Semiconductors
Product data sheet
Low-leakage diode
FEATURES
•
Plastic SMD package
•
Low leakage current: typ. 0.2 nA
•
Switching time: typ. 0.6
µs
•
Continuous reverse voltage: max. 75 V
•
Repetitive peak reverse voltage: max. 85 V
•
Repetitive peak forward current: max. 500 mA.
APPLICATION
•
Low leakage current applications in surface mounted
circuits.
DESCRIPTION
Epitaxial medium-speed switching diode with a low
leakage current in an ultra small SOD523 (SC-79) SMD
plastic package.
ORDERING INFORMATION
PACKAGE
TYPE NUMBER
NAME
BAS716
−
DESCRIPTION
plastic surface mounted package; 2 leads
PINNING
BAS716
handbook, halfpage
1
Marking code:
S1.
The marking bar indicates the cathode.
;
1
2
Top view
PIN
DESCRIPTION
cathode
anode
2
MAM408
Fig.1
Simplified outline (SOD523; SC-79) and
symbol.
VERSION
SOD523
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V
RRM
V
R
I
F
I
FRM
I
FSM
PARAMETER
repetitive peak reverse voltage
continuous reverse voltage
continuous forward current
repetitive peak forward current
non-repetitive peak forward current square wave; T
j
= 25
°C
prior to surge;
see Fig.4
t
p
= 1
µs
t
p
= 1 ms
t
p
= 1 s
P
tot
T
stg
T
j
Note
1. Device mounted on a FR4 printed-circuit board.
total power dissipation
storage temperature
junction temperature
T
amb
= 25
°C;
note 1
−
−
−
−
−65
−
4
1
0.5
250
+150
150
A
A
A
mW
°C
°C
see Fig.2; note 1
CONDITIONS
−
−
−
−
MIN.
MAX.
85
75
200
500
UNIT
V
V
mA
mA
2003 Nov 07
2
NXP Semiconductors
Product data sheet
Low-leakage diode
ELECTRICAL CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
V
F
PARAMETER
forward voltage
I
F
= 1 mA
I
F
= 10 mA
I
F
= 50 mA
I
F
= 150 mA
I
R
reverse current
V
R
= 75 V
V
R
= 75 V; T
j
= 150
°C
V
R
= 100 V
C
d
t
rr
diode capacitance
reverse recovery time
V
R
= 0 V; f = 1 MHz; see Fig.6
when switched from I
F
= 10 mA to
I
R
= 10 mA; R
L
= 100
Ω;
measured at
I
R
= 1 mA
CONDITIONS
TYP.
0.77
0.85
0.92
1.02
0.2
3
0.3
2
0.6
1
1.1
BAS716
MAX.
0.9
V
V
V
V
UNIT
1 .25
5
80
−
−
3
nA
nA
nA
pF
µs
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
R
th j-s
Notes
1. Device mounted on a FR4 printed-circuit board. Refer to SOD523 (SC-79) standard mounting conditions.
2. Soldering point of the cathode tab.
PARAMETER
thermal resistance from junction to ambient
thermal resistance from junction to soldering point
CONDITIONS
note 1
note 2
VALUE
450
120
UNIT
K/W
K/W
2003 Nov 07
3
NXP Semiconductors
Product data sheet
Low-leakage diode
GRAPHICAL DATA
MHC323
BAS716
handbook, halfpage
300
handbook, halfpage
300
MLB752 - 1
IF
(mA)
IF
(mA)
200
(1)
(2)
(3)
200
100
100
0
0
100
Tamb (°C)
200
0
0
0.4
0.8
1.2
V F (V)
1.6
Device mounted on a FR4 printed-circuit board.
(1) T
j
= 150
°C;
typical values.
(2) T
j
= 25
°C;
typical values.
(3) T
j
= 25
°C;
maximum values.
Fig.2
Maximum permissible continuous forward
current as a function of ambient
temperature.
Fig.3
Forward current as a function of forward
voltage.
handbook, full pagewidth
10
2
MBG704
IFSM
(A)
10
1
10
−1
1
10
10
2
10
3
tp (µs)
10
4
Based on square wave currents; T
j
= 25
°C
prior to surge.
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
2003 Nov 07
4
NXP Semiconductors
Product data sheet
Low-leakage diode
BAS716
handbook, halfpage
10
2
MDB826
handbook, halfpage
2.0
MDB827
IR
(nA)
10
(1)
Cd
(pF)
1.5
1.0
(2)
1
0.5
10
−1
0
50
100
150
Tj (°C)
200
0
0
5
10
15 V (V) 20
R
V
R
= 75 V.
(1) Maximum values.
(2) Typical values.
f = 1 MHz; T
j
= 25
°C.
Fig.5
Reverse current as a function of junction
temperature.
Fig.6
Diode capacitance as a function of reverse
voltage; typical values.
handbook, full pagewidth
tr
D.U.T.
10%
SAMPLING
OSCILLOSCOPE
R i = 50
Ω
VR
90%
tp
t
RS = 50
Ω
V = VR I F x R S
IF
IF
t rr
t
(1)
MGA881
input signal
output signal
(1) I
R
= 1 mA.
Input signal: reverse pulse rise time t
r
= 0.6 ns; reverse voltage pulse duration t
p
= 100 ns; duty factor
δ
= 0.05;
Oscilloscope: rise time t
r
= 0.35 ns.
Fig.7 Reverse recovery voltage test circuit and waveforms.
2003 Nov 07
5
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