Data Sheet No. PD60160-B
IPS0551T
FULLY PROTECTED POWER MOSFET SWITCH
Features
•
•
•
•
•
Over temperature shutdown
Over current shutdown
Active clamp
Low current & logic level input
E.S.D protection
Product Summary
R
ds(on)
V
clamp
I
shutdown
6.0m
Ω
(max)
40V
100A
4µs
Description
The IPS0551T is a fully protected three terminal SMART
POWER MOSFET that features over-current, over-tem-
perature, ESD protection, and drain to source active
clamp. This device combines a HEXFET® POWER
MOSFET and a gate driver. It offers full protection and
high reliability required in harsh environments. The driver
allows short switching times and provides efficient protec-
tion by turning OFF the power MOSFET when temperature
exceeds 165
o
C or when the drain current reaches 100A.
The device restarts once the input is cycled. The ava-
lanche capability is significantly enhanced by the active
clamp and covers most inductive load demagnetiza-
tions.
T
on
/T
off
Package
SUPER SMD220
SUPER TO220
Typical Connection
L oad
D
IN
c o n tro l
R in s e r ie s
( if n e e d e d )
L o g ic s ig n a l
S
(Refer to lead assignment for correct pin configuration)
www.irf.com
1
IPS0551T
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters
are referenced to SOURCE lead. (TAmbient = 25
o
C unless otherwise specified). PCB mounting uses the standard foot-
print with 70
µm
copper thickness.
Symbol Parameter
Vds
Vin
I+in
Isd
cont.
Maximum drain to source voltage
Maximum input voltage
Maximum IN current
Diode max. continuous current
(1)
(rth=60
o
C/W)
(rth=5
o
C/W)
Isd
pulsed
Diode max. pulsed current
(1)
Pd
Maximum power dissipation
(1)
(rth=60
o
C/W)
ESD1
ESD2
T stor.
Tj max.
Tlead
Electrostatic discharge voltage
(Human Body)
Electrostatic discharge voltage
(Machine Model)
Max. storage temperature
Max. junction temperature
Lead temperature (soldering, 10 seconds)
Min.
—
-0.3
-10
—
—
—
—
—
—
-55
-40
—
Max.
37
7
+10
2.8
35
100
2
4
0.5
150
+150
300
Units
V
mA
Test Conditions
A
W
C=100pF, R=1500Ω,
kV
C=200pF, R=0Ω, L=10µH
o
C
Thermal Characteristics
Symbol Parameter
Rth
Rth
Rth
Rth
1
2
3
4
Thermal
Thermal
Thermal
Thermal
resistance free air
resistance to PCB min footprint
resistance to PCB 1" sq. footprint
resistance junction to case
Min.
—
—
—
—
Typ.
60
60
35
0.7
Max. Units Test Conditions
—
—
—
a
o
C/W
Recommended Operating Conditions
These values are given for a quick design. For operation outside these conditions, please consult the application notes.
Symbol Parameter
Continuous drain to source voltage
High level input voltage
Low level input voltage
Continuous drain current
o
Tamb=85 C
(TAmbient = 85
o
C, IN = 5V, rth = 80
o
C/W, Tj = 125
o
C)
( TAmbient = 85
o
C, IN = 5V, rth = 5
o
C/W, Tj = 125
o
C)
Rin
Recommended resistor in series with IN pin
Tr-in (max) Max recommended rise time for IN signal (see fig. 2)
Fr-Isc
(2)
Max. frequency in short circuit condition (Vcc = 14V)
(1) Limited by junction temperature (pulsed current limited also by internal wiring)
(2) Operation at higher switching frequencies is possible. See Appl. Notes.
Vds (max)
VIH
VIL
I ds
Min.
—
4
0
—
—
0.1
—
0
Max.
18
6
0.5
8
35
0.5
1
1
Units
V
A
kΩ
µ
S
kHz
2
www.irf.com
IPS0551T
Static Electrical Characteristics
(Tj = 25
o
C and Vcc = 14V unless otherwise specified. Standard footprint 70µm of copper thickness)
Symbol Parameter
Rds(on)
@Tj=25 C
o
Min.
o
Typ.
4.5
7.5
0.01
40
43
0.85
8.0
1.8
90
130
Max. Units Test Conditions
6.0
8.8
25
—
48
1
9.5
2.2
300
400
mΩ
µA
Vin = 5V, Ids = 10A
Vcc = 14V, Tj = 25
o
C
Id = 20mA
(see Fig.3 & 4)
I=35A -t<100us
Id = 35A, Vin = 0V
Iin = 1 mA
Id = 50mA, Vds = 14V
Vin = 5V
Vin = 5V
over-current triggered
ON state resistance Tj = 25 C
ON state resistance Tj = 150
o
C
Drain to source leakage current
Drain to source clamp voltage 1
Drain to source clamp voltage 2
Body diode forward voltage
IN to source clamp voltage
IN threshold voltage
Input supply current (normal operation)
Input supply current (protection mode)
—
—
0
37
—
—
7
1.0
25
50
Rds(on)
@Tj=150
o
C
Idss
@Tj=25
o
C
V
clamp 1
V
clamp 2
Vsd
Vin
clamp
Vth
Iin, on
Iin, off
V
µA
Switching Electrical Characteristics
Vcc = 14V, Resistive Load = 0.4Ω, Rinput = 50Ω, 100µs pulse, T
j
= 25
o
C, (unless otherwise specified).
Symbol
Parameter
Ton
Tr
Trf
Toff
Tf
Qin
Turn-on delay time
Rise time
Time to 130% final Rds(on)
Turn-off delay time
Fall time
Total gate charge
Min.
0.25
0.25
—
1.5
0.5
—
Typ. Max. Units Test Conditions
1
1
15
4
2
200
4
4
—
8
5
—
See figure 2
µs
See figure 2
nC
Vin = 5V
Protection Characteristics
Symbol Parameter
T sd
I sd
V reset
Treset
EOI_OT
Over temperature threshold
Over current threshold
IN protection reset threshold
Time to reset protection
Short circuit energy (cf application note)
Min.
—
60
1.5
2
100
Typ.
165
100
1.9
10
400
Max. Units Test Conditions
—
150
2.8
40
1200
o
C
A
V
µs
µJ
See fig. 1
See fig. 1
V in = 0V, Tj = 25
o
C
Vcc = 14V
www.irf.com
3
IPS0551T
Functional Block Diagram
All values are typical
DRAIN
37 V
200
Ω
100 k
Ω
IN
S
Q
Q
I sense
T > 165°c
8V
80
µ
A
R
I > Isd
SOURCE
Lead Assignments
2 (D)
1 2 3
In D S
1 2 3
In D S
SUPER TO220
SUPER SMD220
(Advanced Information)
4
www.irf.com
IPS0551T
Vin
5V
0V
90 %
Vin
10 %
Ids
I shutdown
Isd
t < T reset
t > T reset
Tr-in
90 %
Ids
T
Tsd
(165 °c)
10 %
Td on
tr
Td off
tf
T shutdown
Vds
Figure 1 - Timing diagram
Figure 2 - IN rise time & switching time definitions
T clamp
Vin
L
Rem : V load is negative
during demagnetization
V load
+
R
D
14 V
-
Ids
Vds clamp
Vin
Vds
( Vcc )
5v
0v
IN
S
Vds
Ids
( see Appl . Notes to evaluate power dissipation )
Figure 3 - Active clamp waveforms
Figure 4 - Active clamp test circuit
www.irf.com
5
京公网安备 11010802033920号
EEWORLD
