CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Electrical Specifications
PARAMETER
T
C
= 25
o
C, Unless Otherwise Specified
SYMBOL
BV
DSS
V
GS(TH)
TEST CONDITIONS
I
D
= 1mA, V
GS
= 0V
V
GS
= V
DS
,
I
D
= 1mA
T
C
= -55
o
C
T
C
= 25
o
C
T
C
= 125
o
C
T
C
= 25
o
C
T
C
= 125
o
C
T
C
= 25
o
C
T
C
= 125
o
C
MIN
150
-
2.0
1.0
-
-
-
-
-
T
C
= 25
o
C
T
C
= 125
o
C
-
-
-
-
-
-
V
GS
= 0V to 12V
V
DD
= 75V,
I
D
= 68A
-
-
-
V
GS
= 0V to 20V
V
GS
= 0V to 2V
I
D
= 68A, V
DS
= 15V
V
DS
= 25V, V
GS
= 0V,
f = 1MHz
-
-
-
-
-
-
-
TYP
-
-
-
-
-
-
-
-
-
0.018
-
-
-
-
-
115
35
35
195
12
7
6200
1160
45
-
MAX
-
5.5
4.5
-
25
250
100
200
1.632
0.022
0.040
35
160
65
15
140
45
45
-
-
-
-
-
-
0.65
UNITS
V
V
V
V
µA
µA
nA
nA
V
Ω
Ω
ns
ns
ns
ns
nC
nC
nC
nC
nC
V
pF
pF
pF
o
C/W
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
I
DSS
I
GSS
V
DS(ON)
r
DS(ON)12
t
d(ON)
t
r
t
d(OFF)
t
f
Q
g(12)
Q
gs
Q
gd
Q
g(20)
Q
g(TH)
V
(PLATEAU)
C
ISS
C
OSS
C
RSS
R
θ
JC
V
DS
= 120V,
V
GS
= 0V
V
GS
=
±30V
V
GS
= 12V, I
D
= 68A
I
D
= 43A,
V
GS
= 12V
Gate to Source Leakage Current
Drain to Source On-State Voltage
Drain to Source On Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate Charge Source
Gate Charge Drain
Gate Charge at 20V
Threshold Gate Charge
Plateau Voltage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance Junction to Case
V
DD
= 75V, I
D
= 68A,
R
L
= 1.12Ω, V
GS
= 12V,
R
GS
= 2.35Ω
2
FSPJ164R, FSPJ164F
Source to Drain Diode Specifications
PARAMETER
Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
SYMBOL
V
SD
t
rr
Q
RR
T
C
= 25
o
C, Unless Otherwise Specified
MIN
PARAMETER
Drain to Source Breakdown Volts
Gate to Source Threshold Volts
Gate to Body Leakage
Zero Gate Leakage
Drain to Source On-State Volts
Drain to Source On Resistance
NOTES:
1. Pulse test, 300µs Max.
2. Absolute value.
3. Insitu Gamma bias must be sampled for both V
GS
= 12V, V
DS
= 0V and V
GS
= 0V, V
DS
= 80% BV
DSS
.
(Note 3)
(Note 3)
(Notes 2, 3)
(Note 3)
(Notes 1, 3)
(Notes 1, 3)
SYMBOL
BV
DSS
V
GS(TH)
I
GSS
I
DSS
V
DS(ON)
r
DS(ON)12
TEST CONDITIONS
V
GS
= 0, I
D
= 1mA
V
GS
= V
DS
, I
D
= 1mA
V
GS
=
±30V,
V
DS
= 0V
V
GS
= 0, V
DS
= 120V
V
GS
= 12V, I
D
= 68A
V
GS
= 12V, I
D
= 43A
15.0
2.0
-
-
-
-
MAX
-
4.5
100
25
1.632
0.022
MIN
-
1.5
MAX
UNITS
-
4.5
100
50
1.836
0.025
V
V
nA
µA
V
Ω
100 krad
300 krad
I
SD
= 68A
I
SD
= 68A, dI
SD
/dt = 100A/µs
TEST CONDITIONS
MIN
-
-
-
TYP
-
-
3.2
MAX
1.2
370
-
UNITS
V
ns
µC
Electrical Specifications up to 300 krad
Single Event Effects (SEB, SEGR)
Note 4
ENVIRONMENT
(NOTE 5)
(NOTE 6)
TYPICAL LET
(MeV/mg/cm)
37
60
60
82
82
NOTES:
4. Testing conducted at Brookhaven National Labs or Texas A&M.
5. Fluence = 1E5 ions/cm
2
(typical), T = 25
o
C.
6. Ion Species: LET = 37, Br or Kr; LET = 60, I or Xe; LET = 82, Au.
7. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR).
APPLIED
V
GS
BIAS
(V)
-10
-2
-8
0
-5
(NOTE 7)
MAXIMUM
V
DS
BIAS
(V)
150
150
120
120
90
TEST
Single Event Effects Safe Operating Area
SYMBOL
SEESOA
TYPICAL RANGE (µ)
36
32
32
28
28
Performance Curves
Unless Otherwise Specified
LET = 37MeV/mg/cm
2
, RANGE = 36µ
LET = 60MeV/mg/cm
2
, RANGE = 32µ
LET = 82MeV/mg/cm
2
, RANGE = 28µ
FLUENCE = 1E5 IONS/cm
2
(TYPICAL)
150
200
LET = 37
160
V
DS
(V)
100
V
DS
(V)
120
80
50
40
LET = 82
LET = 60
TEMP = 25
o
C
0
0
-2
-4
-6
V
GS
(V)
-8
-10
-12
0
0
5
10
15
20
25
30
35
NEGATIVE V
GS
BIAS (V)
FIGURE 1. SINGLE EVENT EFFECTS SAFE OPERATING AREA
FIGURE 2. TYPICAL SEE SIGNATURE CURVE
3
FSPJ164R, FSPJ164F
Performance Curves
1E-3
LIMITING INDUCTANCE (HENRY)
Unless Otherwise Specified
(Continued)
80
70
1E-4
ILM = 10A
I
D
, DRAIN (A)
30A
1E-5
100A
300A
1E-6
60
50
40
30
20
10
1E-7
10
30
100
DRAIN SUPPLY (V)
300
1000
0
-50
0
50
100
T
C
, CASE TEMPERATURE (
o
C)
150
FIGURE 3. TYPICAL DRAIN INDUCTANCE REQUIRED TO
LIMIT GAMMA DOT CURRENT TO I
AS
FIGURE 4. MAXIMUM CONTINUOUS DRAIN CURRENT vs
TEMPERATURE
500
25
0
C
I
D
, DRAIN CURRENT (A)
100
12V
Q
G
100µs
10
1ms
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(ON)
1
1
10
100
500
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
G
Q
GS
Q
GD
10ms
CHARGE
FIGURE 5. FORWARD BIAS SAFE OPERATING AREA
FIGURE 6. BASIC GATE CHARGE WAVEFORM
2.5
PULSE DURATION = 250ms, V
GS
= 12V, I
D
= 43A
NORMALIZED r
DS(ON)
2.0
I
D
, DRAIN TO SOURCE CURRENT (A)
200
V
GS
= 14V
V
GS
= 12V
160 V
GS
= 10V
V
GS
= 8V
120
V
GS
= 6V
1.5
1.0
80
V
GS
= 6V
40
0.5
0.0
-80
-40
0
40
80
120
160
0
0
2
4
6
8
10
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
T
J
, JUNCTION TEMPERATURE (
o
C)
FIGURE 7. TYPICAL NORMALIZED r
DS(ON)
vs JUNCTION
TEMPERATURE
FIGURE 8. TYPICAL OUTPUT CHARACTERISTICS
4
FSPJ164R, FSPJ164F
Performance Curves
NORMALIZED THERMAL RESPONSE (Z
θJC
)
10
Unless Otherwise Specified
(Continued)
1
0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θJC
+ T
C
10
-4
10
-3
10
-2
10
-1
t, RECTANGULAR PULSE DURATION (s)
10
0
P
DM
t
1
0.1
0.01
t
2
10
1
0.001
10
-5
FIGURE 9. NORMALIZED MAXIMUM TRANSIENT THERMAL RESPONSE
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