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FQD20N06LETM-SP001

Description
Transistor
CategoryDiscrete semiconductor    The transistor   
File Size656KB,9 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Download Datasheet Parametric View All

FQD20N06LETM-SP001 Overview

Transistor

FQD20N06LETM-SP001 Parametric

Parameter NameAttribute value
MakerFairchild
package instruction,
Reach Compliance Codeunknown
FQD20N06LE / FQU20N06LE
May 2001
QFET
FQD20N06LE / FQU20N06LE
60V LOGIC N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for low voltage applications such as automotive, DC/
DC converters, and high efficiency switching for power
management in portable and battery operated products.
TM
Features
17.2A, 60V, R
DS(on)
= 0.06Ω @ V
GS
= 10V
Low gate charge ( typical 9.5 nC)
Low Crss ( typical 35 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
150
o
C maximum junction temperature rating
Low level gate drive requirements allowing direct
operation form logic drivers
• Built-in ESD Protection Diode
D
D
G
G
S
D-PAK
FQD Series
I-PAK
G D S
FQU Series
S
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
T
C
= 25°C unless otherwise noted
Parameter
Drain-Source Voltage
- Continuous (T
C
= 25°C)
Drain Current
- Continuous (T
C
= 100°C)
Drain Current
- Pulsed
(Note 1)
FQD20N06LE / FQU20N06LE
60
17.2
10.9
68.8
±
20
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/°C
°C
°C
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
A
= 25°C) *
Power Dissipation (T
C
= 25°C)
170
17.2
3.8
7.0
2.5
38
0.30
-55 to +150
300
T
J
, T
STG
T
L
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Characteristics
Symbol
R
θJC
R
θJA
R
θJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient *
Thermal Resistance, Junction-to-Ambient
Typ
--
--
--
Max
3.28
50
110
Units
°C/W
°C/W
°C/W
* When mounted on the minimum pad size recommended (PCB Mount)
©2001 Fairchild Semiconductor Corporation
Rev. B1. May 2001
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