Power Field-Effect Transistor, 20.5A I(D), 1000V, 0.5ohm, N-Channel, Silicon, Metal-oxide Semiconductor FET
| Parameter Name | Attribute value |
| Maker | TT Electronics plc |
| Reach Compliance Code | compliant |
| Shell connection | ISOLATED |
| Minimum drain-source breakdown voltage | 1000 V |
| Maximum drain current (ID) | 20.5 A |
| Maximum drain-source on-resistance | 0.5 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 code | R-PUFM-D4 |
| Number of terminals | 4 |
| Operating mode | ENHANCEMENT MODE |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | FLANGE MOUNT |
| Polarity/channel type | N-CHANNEL |
| Maximum pulsed drain current (IDM) | 82 A |
| Certification status | Not Qualified |
| Guideline | CECC |
| surface mount | NO |
| Terminal form | SOLDER LUG |
| Terminal location | UPPER |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
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