BD3539NUV-TR datasheet, PDF - EEWORLD Datasheet

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BD3539NUV-TR: DescriptionTerminator Support Circuit, PDSO8, 3 X 2 MM, 0.60 MM PITCH, ROHS COMPLIANT, VSON-8; CategoryAnalog mixed-signal IC Drivers and interfaces; File Size403KB，12 Pages; ManufacturerROHM Semiconductor; Websitehttps://www.rohm.com/; Environmental Compliance; Related ProductsFound4parts with similar functions to BD3539NUV-TR

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BD3539NUV-TR Overview

Terminator Support Circuit, PDSO8, 3 X 2 MM, 0.60 MM PITCH, ROHS COMPLIANT, VSON-8

BD3539NUV-TR Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Parts packaging code	SON
package instruction	HVSON,
Contacts	8
Reach Compliance Code	compli
ECCN code	EAR99
Differential output	NO
Interface integrated circuit type	BUS TERMINATOR SUPPORT CIRCUIT
JESD-30 code	R-PDSO-N8
length	3 mm
Number of functions	1
Number of terminals	8
Maximum operating temperature	100 °C
Minimum operating temperature	-30 °C
Package body material	PLASTIC/EPOXY
encapsulated code	HVSON
Package shape	RECTANGULAR
Package form	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Certification status	Not Qualified
Maximum seat height	1 mm
Maximum supply voltage	5.5 V
Minimum supply voltage	2.7 V
Nominal supply voltage	3.3 V
surface mount	YES
Temperature level	OTHER
Terminal form	NO LEAD
Terminal pitch	0.5 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
width	2 mm
Base Number Matches	1

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High-performance Regulator IC Series for PCs

Termination Regulators

for DDR-SDRAMs

BD3539HFN, BD3539FVM, BD3539NUV

No.09030EBT03

●Description

BD3539HFN/FVM/NUV is a termination regulator compatible with JEDEC DDR-SDRAM, which functions as a linear power

supply incorporating an N-channel MOSFET and provides a sink/source current capability up to 1A respectively. A built-in

high-speed OP-AMP specially designed offers an excellent transient response. Requires 3.3 volts or 5.0 volts as a bias

power supply to drive the N-channel MOSFET. Has an independent reference voltage input pin (VDDQ) and an

independent feedback pin (VTTS) to maintain the accuracy in voltage required by JEDEC, and offers an excellent output

voltage accuracy and load regulation. Also has a reference power supply output pin (VREF) for DDR-SDRAM or a memory

controller. When EN pin turns to “Low”, VTT output becomes “Hi-Z” while VREF output is kept unchanged, compatible with

“Self Refresh” state of DDR-SDRAM.

●Features

1) Incorporates a push-pull power supply for termination (VTT)

2) Incorporates a reference voltage circuit (VREF)

3) Incorporates an enabler

4) Incorporates an undervoltage lockout (UVLO)

5) Employs HSON8 package :2.9×3.0×0.6(mm) : BD3539HFN

6) Employs MSOP8 package : 2.9×4.0×0.9(mm) : BD3539FVM

7) Employs VSON8 package : 2.0×3.0×0.6(mm) : BD3539NUV

8) Incorporates a thermal shutdown protector (TSD)

9) Operates with input voltage from 2.7 to 5.5 volts

10) Compatible with Dual Channel (DDR3)

●Applications

Power supply for DDR3- SDRAM

●Absolute

maximum ratings

Parameter

Input Voltage

Enable Input Voltage

Termination Input Voltage

VDDQ Reference Voltage

Output Current

Power Dissipation1

Power Dissipation2

Power Dissipation3

Power Dissipation4

Operating Temperature Range

Storage Temperature Range

Maximum Junction Temperature

Symbol

VCC

VEN

VTT_IN

VDDQ

ITT

Pd1

Pd2

Pd3

Pd4

Topr

Tstg

Tjmax

BD3539HFN

630*

1350*

1750*

BD3539FVM

*1*2

437.5

-30½+100

-55½+150

+150

BD3539NUV

270.0

616.1

1770.5

1790.8

*10

Unit

℃

*1 Should not exceed Pd.

*2 Instantaneous surge voltage, back electromotive force and voltage under less than 10% duty cycle.

*3 With Ta≧25℃ when mounting a 70mm×70mm×1.6mm glass-epoxy substrate 1-layer board (copper foil density 0.2%),

θja=198.4℃/W

*4 With Ta≧25℃ when mounting a 70mm×70mm×1.6mm glass-epoxy substrate 1-layer board (copper foil density 7%),

θja=92.4℃/W

*5 With Ta≧25℃ when mounting a 70mm×70mm×1.6mm glass-epoxy substrate 1-layer board (copper foil density 65%),

θja=71.4℃/W

*6 With Ta≧25℃ (With no heat sink)

θja=286℃/W

*7 With Ta≧25℃ when mounting a 70mm×70mm×1.6mm glass-epoxy substrate board (when don’t mounted on a heat radiation board ),

θja=463℃/W

*8 With Ta≧25℃ when mounting a 70mm×70mm×1.6mm glass-epoxy substrate 1-layer board,θja=202.9℃/W

*9 With Ta≧25℃ when mounting a 70mm×70mm×1.6mm glass-epoxy substrate 4-layers board, (copper foil area : 6.28mm

)

which has copper foil in each layer,

θja=70.6℃/W

*10 With Ta≧25℃ when mounting a 70mm×70mm×1.6mm glass-epoxy substrate 4-layers board, (copper foil area : 5505mm

)

which has copper foil in each layer,

θja=69.8℃/W

www.rohm.com

1/12

2009.04 - Rev.B

BD3539HFN, BD3539FVM, BD3539NUV

Technical Note

●Description

of operations

・VCC

In BD3539HFN/FVM/NUV, an independent power input pin is provided for an internal circuit operation of the IC. This is

used to drive the amplifier circuit of the IC, and its maximum current rating is 4mA. The power supply voltage is 2.7 to 5.5

volts. It is recommended to connect a bypass capacitor of 1μF or so to VCC.

・VDDQ

Reference input pin for the output voltage that may be used to satisfy the JEDEC requirement for DDR3-SDRAM

(VREF=VTT = 1/2VDDQ) by dividing the voltage inside the IC with two 100kΩ voltage-divider resistors.

For BD3539HFN/FVM/NUV, care must be taken to an input noise to VDDQ pin because this IC also cuts such noise input

into half and provides it with the voltage output divided in half. Such noise may be reduced with an RC filter consisting of

such resistance and capacitance (220Ω and 2.2μF, for instance) that may not give significant effect to voltage dividing

inside the IC.

・VTT_IN

VTT_IN is a power supply input pin for VTT output. Voltage in the range between 1.0 and 5.5 volts may be supplied to this

VTT_IN terminal, but care must be taken to the current limitation due to on-resistance of the IC and the change in allowable

loss due to input/output voltage difference.

Generally, the following voltages are supplied:

・

DDR3

VTT_IN=1.5V

Higher impedance of the voltage input at VTT_IN may result in oscillation or degradation in ripple rejection, which must be

noted. To VTT_IN terminal, it is recommended to use a 10μF capacitor characterized with less change in capacitance.

But it may depend on the characteristics of the power supply input and the impedance of the pc board wiring, which must

be carefully checked before use.

・VREF

In BD3539HFN/FVM/NUV, a reference voltage output pin independent from VTT output is given to provide a reference

input for a memory controller and a DRAM. Even if EN pin turns to “Low” level, VREF output is kept unchanged,

compatible with “Self Refresh” state of DRAM. The maximum current capability of VREF is 10mA, and a suitable

capacitor is needed to stabilize the output voltage. It is recommended to use a combination of a 1.0 to 2.2μF ceramic

capacitor characterized with less change in capacitance. For an application where VREF current is low, a capacitor of

lower capacitance may be used. If VREF current is 1mA or less, it is possible to secure a phase margin with a ceramic

capacitor of 1μF more or less.

・VTTS

An independent pin provided to improve load regulation of VTT output. In case that longer wiring is needed to the load at

VTT output, connecting VTTS from the load side may improve the load regulation.

・VTT

A DDR memory termination output pin. BD3539HFN/FVM/NUV has a sink/source current capability of ±1.0A respectively.

The output voltage tracks the voltage divided in half at VDDQ pin. VTT output is turned to OFF when VCC UVLO or

thermal shutdown protector is activated with EN pin level turned to “Low”. Do not fail to connect a capacitor to VTT output

pin for a loop gain phase compensation and a reduction in output voltage variation in the event of sudden change in load.

Insufficient capacitance may cause an oscillation. High ESR (Equivalent Series Resistance) of the capacitor may result in

increase in output voltage variation in the event of sudden change in load. It is recommended to use a 10μF or so ceramic

capacitor, though it depends on ambient temperature and other conditions.

・EN

With an input of 2.3 volts or higher, the level at EN pin turns to “High” to provide VTT output. If the input is lowered to 0.8

volts or less, the level at EN pin turns to “Low” and VTT status turns to Hi-Z. But if VCC and VDDQ are established, VREF

output is maintained.

www.rohm.com

5/11

2009.04 - Rev.B

BD3539NUV-TR Related Products

	BD3539NUV-TR	BD3539HFN-TR	BD3539HFN	BD3539NUV
Description	Terminator Support Circuit, PDSO8, 3 X 2 MM, 0.60 MM PITCH, ROHS COMPLIANT, VSON-8	Terminator Support Circuit, PDSO8, 3 X 2.90 MM, 0.60 MM HEIGHT, ROHS COMPLIANT, HSON-8	Terminator Support Circuit, PDSO8, 3 X 2.90 MM, 0.60 MM HEIGHT, ROHS COMPLIANT, HSON-8	Terminator Support Circuit, PDSO8, 3 X 2 MM, 0.60 MM PITCH, ROHS COMPLIANT, VSON-8
Parts packaging code	SON	SON	SON	SON
package instruction	HVSON,	HVSON,	3 X 2.90 MM, 0.60 MM HEIGHT, ROHS COMPLIANT, HSON-8	3 X 2 MM, 0.60 MM PITCH, ROHS COMPLIANT, VSON-8
Contacts	8	8	8	8
Reach Compliance Code	compli	compliant	compliant	compliant
ECCN code	EAR99	EAR99	EAR99	EAR99
Differential output	NO	NO	NO	NO
Interface integrated circuit type	BUS TERMINATOR SUPPORT CIRCUIT	BUS TERMINATOR SUPPORT CIRCUIT	BUS TERMINATOR SUPPORT CIRCUIT	BUS TERMINATOR SUPPORT CIRCUIT
JESD-30 code	R-PDSO-N8	R-PDSO-N8	R-PDSO-N8	R-PDSO-N8
length	3 mm	2.9 mm	2.9 mm	3 mm
Number of functions	1	1	1	1
Number of terminals	8	8	8	8
Maximum operating temperature	100 °C	100 °C	100 °C	100 °C
Minimum operating temperature	-30 °C	-30 °C	-30 °C	-30 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	HVSON	HVSON	HVSON	HVSON
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum seat height	1 mm	0.6 mm	0.6 mm	1 mm
Maximum supply voltage	5.5 V	5.5 V	5.5 V	5.5 V
Minimum supply voltage	2.7 V	2.7 V	2.7 V	2.7 V
Nominal supply voltage	3.3 V	3.3 V	3.3 V	3.3 V
surface mount	YES	YES	YES	YES
Temperature level	OTHER	OTHER	OTHER	OTHER
Terminal form	NO LEAD	NO LEAD	NO LEAD	NO LEAD
Terminal pitch	0.5 mm	0.65 mm	0.65 mm	0.5 mm
Terminal location	DUAL	DUAL	DUAL	DUAL
width	2 mm	2.8 mm	2.8 mm	2 mm
Base Number Matches	1	1	1	1

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BD3539NUV-TR Similar Products

Part Number	Manufacturer	Description
BD3539NUV-E2	ROHM(罗姆半导体)	Terminator Support Circuit, 3 X 2 MM, 0.60 MM PITCH, LEAD FREE, VSON-8
BD3539NUX-TR	ROHM(罗姆半导体)	Power Management Specialized - PMIC Zener Diode, 100mW, 2 Pin.
BD3539NUX	ROHM(罗姆半导体)	Termination Regulators for DDR-SDRAMs
BD3539NUV	ROHM(罗姆半导体)	Terminator Support Circuit, PDSO8, 3 X 2 MM, 0.60 MM PITCH, ROHS COMPLIANT, VSON-8

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