VN0300L18 datasheet, PDF - EEWORLD Datasheet

VN0300L18: DescriptionSmall Signal Field-Effect Transistor, 0.2A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET; CategoryDiscrete semiconductor The transistor; File Size27KB，1 Pages; ManufacturerMotorola ( NXP ); Websitehttps://www.nxp.com

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VN0300L18 Overview

Small Signal Field-Effect Transistor, 0.2A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Parameter Name	Attribute value
Maker	Motorola ( NXP )
package instruction	CYLINDRICAL, O-PBCY-T3
Reach Compliance Code	unknown
ECCN code	EAR99
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	30 V
Maximum drain current (ID)	0.2 A
Maximum drain-source on-resistance	1.2 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)	25 pF
JESD-30 code	O-PBCY-T3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	CYLINDRICAL
Polarity/channel type	N-CHANNEL
Maximum power consumption environment	0.35 W
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	BOTTOM
transistor applications	SWITCHING
Transistor component materials	SILICON

	VN0300L18	VN0300L5
Description	Small Signal Field-Effect Transistor, 0.2A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	200mA, 30V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
package instruction	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3
Reach Compliance Code	unknown	unknown
ECCN code	EAR99	EAR99
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	30 V	30 V
Maximum drain current (ID)	0.2 A	0.2 A
Maximum drain-source on-resistance	1.2 Ω	1.2 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)	25 pF	25 pF
JESD-30 code	O-PBCY-T3	O-PBCY-T3
Number of components	1	1
Number of terminals	3	3
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	ROUND	ROUND
Package form	CYLINDRICAL	CYLINDRICAL
Polarity/channel type	N-CHANNEL	N-CHANNEL
Maximum power consumption environment	0.35 W	0.35 W
Certification status	Not Qualified	Not Qualified
surface mount	NO	NO
Terminal form	THROUGH-HOLE	THROUGH-HOLE
Terminal location	BOTTOM	BOTTOM
transistor applications	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON

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