BLA1011-200.112 datasheet, PDF

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BLA1011-200.112: Description200 W LDMOS avionics power transistor for transmitter applications at frequencies from 1030 MHz to 1090 MHz.; File Size65KB，13 Pages; ManufacturerPhilips Semiconductors (NXP Semiconductors N.V.); Websitehttps://www.nxp.com/

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200 W LDMOS avionics power transistor for transmitter applications at frequencies from 1030 MHz to 1090 MHz.

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BLA1011-200; BLA1011S-200

Avionics LDMOS transistor

Rev. 08 — 26 October 2005

Product data sheet

1. Product proﬁle

1.1 General description

200 W LDMOS avionics power transistor for transmitter applications at frequencies from

1030 MHz to 1090 MHz.

Table 1:

Typical performance

RF performance at T

= 25

C in a common source class-AB test circuit; I

= 150 mA; typical

values.

Mode of operation

Pulsed class-AB:

1030 MHz to 1090 MHz

Conditions

= 50

µs; δ

= 2 %

= 128

µs; δ

= 2 %

= 340

µs; δ

= 1 %

CAUTION

This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken

during transport and handling.

(V)

(W)

200

250

(dB)

(%)

(ns)

1.2 Features

Typical pulsed class-AB performance at a frequencies from 1030 MHz to 1090 MHz, a

supply voltage of 36 V and an I

of 150 mA:

Load power

≥

200 W

Gain

≥

13 dB

Efﬁciency

≥

45 %

Rise time

≤

50 ns

Fall time

≤

50 ns

High power gain

Easy power control

Excellent ruggedness

Source on mounting ﬂange eliminates DC isolators, reducing common mode

inductance

1.3 Applications

Avionics transmitter applications in the 1030 MHz to 1090 MHz frequency range.

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