BT138X-600E
27 July 2012
4Q Triac
Product data sheet
1. Product profile
1.1 General description
Planar passivated sensitive gate four quadrant triac in a SOT186A (TO-220F) "full pack"
plastic package intended for use in applications requiring high bidirectional transient and
blocking voltage capability and high thermal cycling performance. Typical applications
include motor control, industrial and domestic lighting, heating and static switching. This
sensitive gate "series E" triac is intended for gate triggering by low power drivers and
microcontrollers.
1.2 Features and benefits
•
Direct triggering from low power drivers and logic ICs
•
High blocking voltage capability
•
Isolated package
•
Planar passivated for voltage ruggedness and reliability
•
Sensitive gate
•
Triggering in all four quadrants
1.3 Applications
•
General purpose motor control
•
General purpose switching
1.4 Quick reference data
Table 1.
Symbol
V
DRM
I
TSM
T
j
I
T(RMS)
Quick reference data
Parameter
repetitive peak off-
state voltage
non-repetitive peak on- full sine wave; T
j(init)
= 25 °C;
state current
t
p
= 20 ms;
Fig. 4; Fig. 5
junction temperature
RMS on-state current
full sine wave; T
h
≤ 56 °C;
Fig. 1; Fig. 2;
Fig. 3
Static characteristics
I
GT
gate trigger current
V
D
= 12 V; I
T
= 0.1 A; T2+ G+;
T
j
= 25 °C;
Fig. 7
-
2.5
10
mA
Conditions
Min
-
-
-
-
Typ
-
-
-
-
Max
600
95
125
12
Unit
V
A
°C
A
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NXP Semiconductors
BT138X-600E
4Q Triac
Symbol
Parameter
Conditions
V
D
= 12 V; I
T
= 0.1 A; T2+ G-;
T
j
= 25 °C;
Fig. 7
V
D
= 12 V; I
T
= 0.1 A; T2- G-;
T
j
= 25 °C;
Fig. 7
V
D
= 12 V; I
T
= 0.1 A; T2- G+;
T
j
= 25 °C;
Fig. 7
Min
-
-
-
Typ
4
5
11
Max
10
10
25
Unit
mA
mA
mA
Dynamic characteristics
dV
D
/dt
rate of rise of off-state
voltage
V
DM
= 402 V; T
j
= 125 °C; (V
DM
= 67%
of V
DRM
); exponential waveform; gate
open circuit
-
150
-
V/µs
2. Pinning information
Table 2.
Pin
1
2
3
mb
Pinning information
Symbol Description
T1
T2
G
n.c.
main terminal 1
main terminal 2
gate
mounting base; isolated
Simplified outline
mb
Graphic symbol
T2
sym051
T1
G
1 2 3
TO-220F (SOT186A)
3. Ordering information
Table 3.
Ordering information
Package
Name
BT138X-600E
TO-220F
Description
plastic single-ended package; isolated heatsink mounted; 1
mounting hole; 3-lead TO-220 "full pack"
Version
SOT186A
Type number
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DRM
BT138X-600E
Parameter
repetitive peak off-state voltage
Conditions
Min
-
Max
600
Unit
V
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© NXP B.V. 2012. All rights reserved
Product data sheet
27 July 2012
2 / 13
NXP Semiconductors
BT138X-600E
4Q Triac
Symbol
I
T(RMS)
I
TSM
Parameter
RMS on-state current
non-repetitive peak on-state
current
Conditions
full sine wave; T
h
≤ 56 °C;
Fig. 1; Fig. 2;
Fig. 3
full sine wave; T
j(init)
= 25 °C;
t
p
= 20 ms;
Fig. 4; Fig. 5
full sine wave; T
j(init)
= 25 °C;
t
p
= 16.7 ms
Min
-
-
-
-
-
-
-
-
-
-
Max
12
95
105
45
50
50
50
10
2
5
0.5
150
125
003aaj941
Unit
A
A
A
2
I t
dI
T
/dt
2
I t for fusing
rate of rise of on-state current
2
t
p
= 10 ms; sine-wave pulse
I
T
= 20 A; I
G
= 0.2 A; dI
G
/dt = 0.2 A/µs;
T2+ G+
I
T
= 20 A; I
G
= 0.2 A; dI
G
/dt = 0.2 A/µs;
T2+ G-
I
T
= 20 A; I
G
= 0.2 A; dI
G
/dt = 0.2 A/µs;
T2- G-
I
T
= 20 A; I
G
= 0.2 A; dI
G
/dt = 0.2 A/µs;
T2- G+
A s
A/µs
A/µs
A/µs
A/µs
A
W
W
°C
°C
I
GM
P
GM
P
G(AV)
T
stg
T
j
15
I
T(RMS)
(A)
12
peak gate current
peak gate power
average gate power
storage temperature
junction temperature
003aaj939
over any 20 ms period
-
-40
-
100
I
T(RMS)
(A)
80
56 °C
9
60
6
40
3
20
0
-50
0
50
100
T
h
(°C)
150
0
10
-2
10
-1
1
10
surge duration (s)
Fig. 1.
RMS on-state current as a function of heatsink
temperature; maximum values
f = 50 Hz; T
h
= 56 °C
Fig. 2.
RMS on-state current as a function of surge
duration; maximum values
BT138X-600E
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© NXP B.V. 2012. All rights reserved
Product data sheet
27 July 2012
3 / 13
NXP Semiconductors
BT138X-600E
4Q Triac
20
P
tot
(W)
16
003aaj943
conduction
angle
(degrees)
30
60
90
120
180
form
factor
a
4
2.8
2.2
1.9
1.57
α
45
T
h(max)
(°C)
61
α = 180°
120°
90°
60°
30°
12
77
8
93
4
109
0
0
3
6
9
12
I
T(RMS)
(A)
125
15
α = conduction angle
Fig. 3.
100
I
TSM
(A)
80
Total power dissipation as a function of RMS on-state current; maximum values
003aaj944
60
40
I
T
I
TSM
t
20
1/f
0
T
j(init)
=
25
°C
max
1
10
10
2
number of cycles (n)
10
3
f = 50 Hz
Fig. 4.
Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values
BT138X-600E
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© NXP B.V. 2012. All rights reserved
Product data sheet
27 July 2012
4 / 13
NXP Semiconductors
BT138X-600E
4Q Triac
10
3
I
TSM
(A)
003aaj945
I
T
I
TSM
t
t
p
Tj(init) = 25 °C max
10
2
(1)
(2)
10
10
-5
10
-4
10
-3
10
-2
t
p
(s)
10
-1
t
p
≤ 20 ms
(1) dI
T
/dt limit
(2) T2- G+ quadrant limit
Fig. 5.
Non-repetitive peak on-state current as a function of pulse width; maximum values
5. Thermal characteristics
Table 5.
Symbol
R
th(j-h)
Thermal characteristics
Parameter
thermal resistance
from junction to
heatsink
thermal resistance
from junction to
ambient
Conditions
full or half cycle; with heatsink
compound;
Fig. 6
full or half cycle; without heatsink
compound;
Fig. 6
in free air
Min
-
-
-
Typ
-
-
55
Max
4
5.5
-
Unit
K/W
K/W
K/W
R
th(j-a)
BT138X-600E
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved
Product data sheet
27 July 2012
5 / 13
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