DISCRETE SEMICONDUCTORS
DATA SHEET
M3D744
BAT74V
Schottky barrier double diode
Product data sheet
2002 Sep 02
NXP Semiconductors
Product data sheet
Schottky barrier double diode
FEATURES
•
Low forward voltage
•
Low capacitance
•
Ultra small SMD plastic package
•
Flat leads: excellent coplanarity and improved thermal
behaviour.
APPLICATIONS
•
Ultra high-speed switching
•
Voltage clamping
•
Line termination
•
Inverse polarity protection.
DESCRIPTION
Planar Schottky barrier double diode with an integrated
guard ring for stress protection.
Two separate dies encapsulated in a SOT666 ultra small
SMD plastic package.
1
1
Top view
Marking code:
74.
handbook, halfpage
BAT74V
PINNING
PIN
1
2
3
4
5
6
anode 1
not connected
cathode 2
anode 2
not connected
cathode 1
DESCRIPTION
6
5
4
6
4
3
2
3
MAM461
Fig.1 Simplified outline (SOT666) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V
R
I
F
I
FRM
I
FSM
P
tot
T
stg
T
j
T
amb
PARAMETER
continuous reverse voltage
continuous forward current
repetitive peak forward current
non-repetitive peak forward current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
t
p
≤
1 s;
δ ≤
0.5
t
p
<
10 ms
T
amb
≤
25
°C
−
−65
−
−65
CONDITIONS
−
−
−
MIN.
MAX.
30
200
300
600
230
+150
125
+125
V
mA
mA
mA
mW
°C
°C
°C
UNIT
2002 Sep 02
2
NXP Semiconductors
Product data sheet
Schottky barrier double diode
CHARACTERISTICS
T
amb
= 25
°C
unless otherwise specified.
SYMBOL
V
F
PARAMETER
continuous forward voltage
CONDITIONS
I
F
= 0.1 mA
I
F
= 1 mA
I
F
= 1 0 mA
I
F
= 30 mA
I
F
= 1 00 mA; note 1; see Fig.2
I
R
C
d
Note
1. Pulse test: t
p
= 300
μs; δ
= 0.02.
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
Note
1. Refer to SOT666 standard mounting conditions.
Soldering
The only recommended soldering method is reflow soldering.
PARAMETER
thermal resistance from junction to ambient
CONDITIONS
note 1
VALUE
416
reverse current
diode capacitance
V
R
= 25 V; note 1; see Fig.3
V
R
= 1 V; f = 1 MHz; see Fig.4
240
320
400
500
800
2
10
MAX.
BAT74V
UNIT
mV
mV
mV
mV
mV
μA
pF
UNIT
K/W
2002 Sep 02
3
NXP Semiconductors
Product data sheet
Schottky barrier double diode
GRAPHICAL DATA
MSA892
BAT74V
10
3
handbook, halfpage
IF
(mA)
10
2
(1) (2) (3)
10
3
IR
(μA)
10
2
(2)
(1)
MSA893
10
10
1
(1)
(2) (3)
1
(3)
10
1
10
1
0
0.4
0.8
VF (V)
1.2
0
10
20
VR (V)
30
(1) T
amb
= 125
°C.
(2) T
amb
= 85
°C.
(3) T
amb
= 25
°C.
(1) T
amb
= 125
°C.
(2) T
amb
= 85
°C.
(3) T
amb
= 25
°C.
Fig.2
Forward current as a function of forward
voltage; typical values.
Fig.3
Reverse current as a function of reverse
voltage; typical values.
handbook, halfpage
15
MSA891
Cd
(pF)
10
5
0
0
10
20
VR (V)
30
f = 1 MHz; T
amb
= 25
°C.
Fig.4
Diode capacitance as a function of reverse
voltage; typical values.
2002 Sep 02
4
NXP Semiconductors
Product data sheet
Schottky barrier double diode
PACKAGE OUTLINE
BAT74V
Plastic surface mounted package; 6 leads
SOT666
D
A
E
X
S
Y S
HE
6
5
4
pin 1 index
A
1
e1
e
2
bp
3
w
M
A
Lp
detail X
c
0
1
scale
2 mm
DIMENSIONS (mm are the original dimensions)
UNIT
mm
A
0.6
0.5
b
p
0.27
0.17
c
0.18
0.08
D
1.7
1.5
E
1.3
1.1
e
1.0
e
1
0.5
H
E
1.7
1.5
L
p
0.3
0.1
w
0.1
y
0.1
OUTLINE
VERSION
SOT666
REFERENCES
IEC
JEDEC
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
01-01-04
01-08-27
2002 Sep 02
5
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