BSP129
SIPMOS
®
Small-Signal-Transistor
Features
• N-channel
• Depletion mode
• dv /dt rated
• Available with
V
GS(th)
indicator on reel
• Pb-free lead plating; RoHS compliant
• Qualified according to AEC Q101
• Halogenfree according to IEC61249221
Product Summary
V
DS
R
DS(on),max
I
DSS,min
240
6
0.05
V
W
A
PG-SOT223
Type
Type
BSP129
BSP129
BSP129
BSP129
Package
Package
PG-SOT223
PG-SOT223
PG-SOT223
PG-SOT223
Tape and Reel
Tape and Reel
H6327: 1000 pcs/reel
L6327: 1000 pcs/reel
H6906: 1000 pcs/reel
sorted in
V
GS(th)
bands
1)
L6906: 1000 pcs/reel soed
Marking
Packaging
Marking
Packaging
BSP129
Non dry
BSP129
Non dry
BSP129
Non dry
BSP129
Non dry
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Continuous drain current
Symbol Conditions
I
D
T
A
=25 °C
T
A
=70 °C
Pulsed drain current
I
D,pulse
T
A
=25 °C
I
D
=0.36 A,
V
DS
=192 V,
di /dt =200 A/µs,
T
j,max
=150 °C
Value
0.35
0.28
1.4
Unit
A
Reverse diode dv /dt
dv /dt
6
kV/µs
Gate source voltage
ESD class (JESD22-A114-HBM)
Power dissipation
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
1)
V
GS
±20
1A(>250V,<500V)
V
P
tot
T
j
,
T
stg
T
A
=25 °C
1.8
-55 ... 150
55/150/56
W
°C
see table on next page and diagram 11
Rev. 1.42
page 1
2012-11-29
BSP129
Parameter
Symbol Conditions
min.
Thermal characteristics
Thermal resistance,
junction - soldering point (pin 4)
SMD version, device on PCB
Values
typ.
max.
Unit
R
thJS
R
thJA
minimal footprint
6 cm
2
cooling area
1)
-
-
-
-
-
-
25
115
70
K/W
Electrical characteristics,
at
T
j
=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Drain-source cutoff current
V
(BR)DSS
V
GS
=-3 V,
I
D
=250 µA
V
GS(th)
I
D(off)
V
DS
=3 V,
I
D
=108 µA
V
DS
=240 V,
V
GS
=-3 V,
T
j
=25 °C
V
DS
=240 V,
V
GS
=-3 V,
T
j
=125 °C
Gate-source leakage current
On-state drain current
Drain-source on-state resistance
I
GSS
I
DSS
R
DS(on)
V
GS
=20 V,
V
DS
=0 V
V
GS
=0 V,
V
DS
=10 V
V
GS
=0 V,
I
D
=25 mA
V
GS
=10 V,
I
D
=0.35 A
Transconductance
g
fs
|V
DS
|>2|I
D
|R
DS(on)max
,
I
D
=0.28 A
240
-2.1
-
-
-1.4
-
-
-1
0.1
µA
V
-
-
50
-
-
0.18
-
-
-
6.5
4.2
0.36
10
10
-
20
6.0
-
S
nA
mA
W
Threshold voltage
V
GS(th)
sorted in bands
3)
J
K
L
M
N
2)
V
GS(th)
V
DS
=3 V,
I
D
=108 µA
-1.2
-1.35
-1.5
-1.65
-1.8
-
-
-
-
-
-1
-1.15
-1.3
-1.45
-1.6
V
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm
2
(single layer, 70 µm thick) copper area for
drain connection. PCB is vertical in still air.
3)
Each reel contains transistors out of one band whose identifying letter is printed on the reel label. A specific
band cannot be ordered separately.
Rev. 1.42
page 2
2012-11-29
BSP129
Parameter
Symbol Conditions
min.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Reverse Diode
Diode continous forward current
Diode pulse current
Diode forward voltage
Reverse recovery time
Reverse recovery charge
I
S
I
S,pulse
V
SD
t
rr
Q
rr
V
GS
=-3 V,
I
F
=0.35 A,
T
j
=25 °C
V
R
=120 V,
I
F
=0.2 A,
di
F
/dt =100 A/µs
-
T
A
=25 °C
-
-
-
-
-
0.79
53
65
1.4
1.2
80
97
V
ns
nC
-
0.35
A
Q
gs
Q
gd
Q
g
V
plateau
V
DD
=192 V,
I
D
=0.2 A,
V
GS
=-3 to 5 V
-
-
-
-
0.24
1.7
3.8
0.37
0.36
2.6
5.7
-
V
nC
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
DD
=120 V,
V
GS
=-2...5 V,
I
D
=0.2 A,
R
G
=7.6
W
V
GS
=-3 V,
V
DS
=25 V,
f
=1 MHz
-
-
-
-
-
-
-
82
12
6
4.4
4.1
22
35
108
16
10
6.6
6.2
33
53
ns
pF
Values
typ.
max.
Unit
Rev. 1.42
page 3
2012-11-29
BSP129
1 Power dissipation
P
tot
=f(T
A
)
2 Drain current
I
D
=f(T
A
);
V
GS
≥10 V
2
0.4
1.5
0.3
P
tot
[W]
1
I
D
[A]
0
40
80
120
160
0.2
0.5
0.1
0
0
0
40
80
120
160
T
A
[°C]
T
A
[°C]
3 Safe operating area
I
D
=f(V
DS
);
T
A
=25 °C;
D
=0
parameter:
t
p
10
1
4 Max. transient thermal impedance
Z
thJA
=f(t
p
)
parameter:
D
=t
p
/T
10
2
limited by on-state
resistance
10 µs
0.5
10
0
100 µs
0.2
1 ms
Z
thJA
[K/W]
I
D
[A]
10
-1
10 ms
10
1
0.1
0.05
single pulse
0.02
0.01
10
-2
DC
10
-3
10
0
10
1
10
2
10
3
10
0
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
V
DS
[V]
t
p
[s]
Rev. 1.42
page 4
2012-11-29
BSP129
5 Typ. output characteristics
I
D
=f(V
DS
);
T
j
=25 °C
parameter:
V
GS
0.7
10 V
-0.1 V
0.1 V
6 Typ. drain-source on resistance
R
DS(on)
=f(I
D
);
T
j
=25 °C
parameter:
V
GS
20
-0.2 V
0V
0.2 V
0.5 V
0.6
15
0.5
1V
0.4
R
DS(on)
[W]
I
D
[A]
10
0.3
0.5 V
0.2
0V
1V
0.2 V
0.1 V
5
10 V
0.1
-0.2 V
-0.1 V
0
0
2
4
6
8
10
0
0
0.05
0.1
0.15
0.2
0.25
0.3
0.35
V
DS
[V]
I
D
[A]
7 Typ. transfer characteristics
I
D
=f(V
GS
); |V
DS
|>2|I
D
|R
DS(on)max
8 Typ. forward transconductance
g
fs
=f(I
D
);
T
j
=25 °C
1
0.6
0.5
0.8
0.4
0.6
g
fs
[S]
0.4
0.2
0
-2
-1
0
1
2
3
I
D
[A]
0.3
0.2
0.1
0
0.00
0.10
0.20
0.30
0.40
0.50
0.60
0.70
V
GS
[V]
I
D
[A]
Rev. 1.42
page 5
2012-11-29
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