CY61128R2XXV0-25ZAC datasheet, PDF

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CY61128R2XXV0-25ZAC: DescriptionMemory Circuit, ROM+SRAM, 256KX8, CMOS, PDSO32, 8 X 13.40 MM, STSOP1-32; Categorystorage storage; File Size156KB，9 Pages; ManufacturerCypress Semiconductor

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CY61128R2XXV0-25ZAC Overview

Memory Circuit, ROM+SRAM, 256KX8, CMOS, PDSO32, 8 X 13.40 MM, STSOP1-32

CY61128R2XXV0-25ZAC Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	Cypress Semiconductor
Parts packaging code	TSOP1
package instruction	8 X 13.40 MM, STSOP1-32
Contacts	32
Reach Compliance Code	compliant
Other features	RAM ORAGANISED AS 128K X 8
JESD-30 code	R-PDSO-G32
JESD-609 code	e0
length	11.8 mm
memory density	2097152 bit
Memory IC Type	MEMORY CIRCUIT
memory width	8
Mixed memory types	ROM+SRAM
Humidity sensitivity level	3
Number of functions	1
Number of terminals	32
word count	262144 words
character code	256000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	256KX8
Package body material	PLASTIC/EPOXY
encapsulated code	TSOP1
Encapsulate equivalent code	TSSOP32,.56,20
Package shape	RECTANGULAR
Package form	SMALL OUTLINE, THIN PROFILE
Peak Reflow Temperature (Celsius)	240
power supply	1.8/3.3 V
Certification status	Not Qualified
Maximum seat height	1.2 mm
Maximum standby current	0.000001 A
Maximum slew rate	0.006 mA
Maximum supply voltage (Vsup)	3.3 V
Minimum supply voltage (Vsup)	1.8 V
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	GULL WING
Terminal pitch	0.5 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	30
width	8 mm

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CY61128R2XXV0-25ZAC Related Products

	CY61128R2XXV0-25ZAC	CY61128R2XXV0-25ZC
Description	Memory Circuit, ROM+SRAM, 256KX8, CMOS, PDSO32, 8 X 13.40 MM, STSOP1-32	Memory Circuit, ROM+SRAM, 256KX8, CMOS, PDSO32, 8 X 20 MM, TSOP1-32
Is it lead-free?	Contains lead	Contains lead
Is it Rohs certified?	incompatible	incompatible
Parts packaging code	TSOP1	TSOP1
package instruction	8 X 13.40 MM, STSOP1-32	8 X 20 MM, TSOP1-32
Contacts	32	32
Reach Compliance Code	compliant	compliant
Other features	RAM ORAGANISED AS 128K X 8	RAM ORAGANISED AS 128K X 8
JESD-30 code	R-PDSO-G32	R-PDSO-G32
JESD-609 code	e0	e0
length	11.8 mm	18.4 mm
memory density	2097152 bit	2097152 bit
Memory IC Type	MEMORY CIRCUIT	MEMORY CIRCUIT
memory width	8	8
Mixed memory types	ROM+SRAM	ROM+SRAM
Humidity sensitivity level	3	3
Number of functions	1	1
Number of terminals	32	32
word count	262144 words	262144 words
character code	256000	256000
Operating mode	ASYNCHRONOUS	ASYNCHRONOUS
Maximum operating temperature	70 °C	70 °C
organize	256KX8	256KX8
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	TSOP1	TSOP1
Encapsulate equivalent code	TSSOP32,.56,20	TSSOP32,.8,20
Package shape	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE
Peak Reflow Temperature (Celsius)	240	240
power supply	1.8/3.3 V	1.8/3.3 V
Certification status	Not Qualified	Not Qualified
Maximum seat height	1.2 mm	1.2 mm
Maximum standby current	0.000001 A	0.000001 A
Maximum slew rate	0.006 mA	0.006 mA
Maximum supply voltage (Vsup)	3.3 V	3.3 V
Minimum supply voltage (Vsup)	1.8 V	1.8 V
surface mount	YES	YES
technology	CMOS	CMOS
Temperature level	COMMERCIAL	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	GULL WING	GULL WING
Terminal pitch	0.5 mm	0.5 mm
Terminal location	DUAL	DUAL
Maximum time at peak reflow temperature	30	30
width	8 mm	8 mm

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