DUAL CHANNEL
ILD1/2/5
QUAD CHANNEL
ILQ1/2/5
Phototransistor
Optocoupler
FEATURES
• Current Transfer Ratio at
I
F
=10 mA
ILD/Q1, 20% Min.
ILD/Q2, 100% Min.
ILD/Q5, 50% Min.
• High Collector-Emitter Voltage
ILD/Q1: BV
CEO
=50 V
ILD/Q2, ILD/Q5: BV
CEO
=70 V
• Field-Effect Stable by TRansparent IOn Shield
(TRIOS) Isolation Test Voltage, 5300 V
RMS
• Underwriters Lab File #E52744
V
•
VDE 0884 Available with Option 1
D E
Maximum Ratings
(Each Channel)
Emitter
Reverse Voltage .............................................. 6.0 V
Forward Current ............................................60 mA
Surge Current .................................................. 2.5 A
Power Dissipation........................................ 100 mW
Derate Linearly from 25
°
C ...................... 1.3 mW/
°
C
Detector
Collector-Emitter Reverse Voltage
ILD/Q1 ............................................................ 50 V
ILD/Q2, ILD/Q5................................................ 70 V
Collector Current ............................................50 mA
Collector Current (t<1.0 ms).........................400 mA
Power Dissipation........................................ 200 mW
Derate Linearly from 25
°
C ....................... 2.6 mW/
°
C
Package
Isolation Test Voltage (between
emitter and detector referred to
standard climate 23
°
C/50%RH,
DIN 50014)........................................... 5300 V
RMS
Creepage ..................................................
≥
7.0 mm
Clearance ..................................................
≥
7.0 mm
Isolation Resistance
V
IO
=500 V,
T
A
=25
°
C........................... R
IO
=10
12
Ω
V
IO
=500 V,
T
A
=100
°
C......................... R
IO
=10
11
Ω
Package Power Dissipation......................... 250 mW
Derate Linearly from 25
°
C ...................... 3.3 mW/
°
C
Storage Temperature.................... –40
°
C to +150
°
C
Operating Temperature ................. –40
°
C to +100
°
C
Junction Temperature..................................... 100
°
C
Soldering Temperature
(2.0 mm from case bottom) ........................ 260
°
C
Dimensions in inches (mm)
Dual Channel
pin one ID
4
.255 (6.48)
.268 (6.81)
5
6
7
8
Cathode
3
4
6 Collector
5 Emitter
Anode
3
2
1
Anode
Cathode
1
2
8 Emitter
7 Collector
.379 (9.63)
.390 (9.91)
.030 (0.76)
.045 (1.14)
4° typ.
.031 (0.79)
.130 (3.30)
.150 (3.81)
.300 (7.62)
typ.
.050 (1.27)
.018 (.46)
.022 (.56)
.020 (.51 )
.035 (.89 )
.100 (2.54) typ.
10
°
3°–9°
.008 (.20)
.012 (.30)
Anode 1
Cathode 2
.230(5.84)
.110 (2.79) .250(6.35)
.130 (3.30)
Quad Channel
pin one ID
8
7
6
5
4
3
2
1
.255 (6.48)
.265 (6.81)
9
10
11 12
13
14
15
16
16 Emitter
15 Collector
14 Collector
13 Emitter
12 Emitter
11 Collector
10 Collector
9
Emitter
Cathode 3
Anode 4
Anode 5
Cathode 6
Cathode
7
.779 (19.77 )
.790 (20.07)
.030 (.76)
.045 (1.14)
.031(.79)
.130 (3.30)
.150 (3.81)
4°
.018 (.46)
.022 (.56)
.020(.51)
.035 (.89)
.100 (2.54)typ.
.050 (1.27)
Anode 8
.300 (7.62)
typ.
.110 (2.79)
.130 (3.30) .230 (5.84)
.250 (6.35)
10°
typ.
3°–9°
.008 (.20)
.012 (.30)
DESCRIPTION
The ILD/Q1/2/5 are optically coupled isolated pairs employing GaAs infra-
red LEDs and silicon NPN phototransistor. Signal information, including a
DC level, can be transmitted by the drive while maintaining a high degree
of electrical isolation between input and output. The ILD/Q1/2/5 are espe-
cially designed for driving medium-speed logic and can be used to elimi-
nate troublesome ground loop and noise problems. Also these couplers
can be used to replace relays and transformers in many digital interface
applications such as CRT modulation. The ILD1/2/5 has two isolated chan-
nels in a single DIP package and the ILQ1/2/5 has four isolated channels
per package.
See Appnote 45,
“How to Use Optocoupler Normalized Curves”.
2001 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA
www.infineon.com/opto • 1-888-Infineon (1-888-463-4636)
2–173
March 17, 2000-13
Characteristics
Parameter
Emitter
Forward Voltage
Reverse Current
Capacitance
Thermal Resistance, Junction to Lead
Detector
Capacitance
Leakage Current, Collector-Emitter
Saturation Voltage, Collector-Emitter
DC Forward Current Gain
Saturated DC Forward Current Gain
Thermal Resistance, Junction to Lead
Symbol
Min.
Typ.
Max.
Unit
Condition
V
F
I
R
C
0
R
THJL
—
—
—
—
1.25
0.01
25
750
1.65
10
V
µ
A
pF
K/W
I
F
=60 mA
V
R
=6.0 V
V
R
=0 V, f=1.0 MHz
—
—
—
C
CE
I
CEO
V
CESAT
HFE
HFE
SAT
—
—
—
200
120
6.8
5.0
0.25
650
400
500
—
50
0.4
1800
600
pF
nA
V
CE
=5.0 V, f=1.0 MHz
V
CE
=10 V
I
CE
=1.0 mA, I
B
=20
µ
A
V
CE
= 10 V, I
B
=20
µ
A
V
CE
= 0.4 V, I
B
=20
µ
A
—
—
—
—
K/W
R
THJL
—
—
Package Transfer Characteristics
(Each Channel)
Parameter
ILD/Q1
Saturated Current Transfer Ratio (Collector-Emitter)
Current Transfer Ratio (Collector-Emitter)
ILD/Q2
Saturated Current Transfer Ratio (Collector-Emitter)
Current Transfer Ratio (Collector-Emitter)
ILD/Q5
Saturated Current Transfer Ratio (Collector-Emitter)
Current Transfer Ratio (Collector-Emitter)
Isolation and Insulation
Common Mode Rejection, Output High
Common Mode Rejection, Output Low
Common Mode Coupling Capacitance
Package Capacitance
C
MH
C
ML
C
CM
CTR
CESAT
CTR
CE
CTR
CESAT
CTR
CE
CTR
CESAT
CTR
CE
Symbol
Min.
Typ.
Max.
Unit
Condition
—
20
75
80
—
300
%
%
I
F
=10 mA,
V
CE
=0.4 V
I
F
=10 mA,
V
CE
=10 V
I
F
=10 mA,
V
CE
=0.4 V
I
F
=10 mA,
V
CE
=10 V
I
F
=10 mA,
V
CE
=0.4 V
I
F
=10 mA,
V
CE
=10 V
V
CM
=50 V
P-P
,
R
L
=1.0 kΩ,
I
F
=0 mA
V
CM
=50 V
P-P
,
R
L
=1.0 kΩ,
I
F
=10 mA
—
100
170
200
—
500
%
%
—
50
100
130
—
400
%
%
—
—
—
—
5000
5000
0.01
0.8
—
—
—
—
V/
µ
s
V/µs
pF
pF
—
C
IO
V
IO
=0 V, f=1.0 MHz
2001 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA
www.infineon.com/opto • 1-888-Infineon (1-888-463-4636)
2–174
ILD/Q1/2/5
March 17, 2000-13
Typical Switching Times
Figure 1. Non-saturated switching timing
V
CC
=5 V
I
F
=10 mA
V
O
F=10 KHz,
DF=50%
R
L
=75
Ω
Non-saturated
Characteristic
ILD/Q1
I
F
=20 mA
0.8
1.9
0.2
1.4
0.7
1.4
ILD/Q2
I
F
=5.0
mA
1.7
2.6
0.4
2.2
1.2
2.3
ILD/Q5
I
F
=10
mA
1.7
2.6
0.4
2.2
1.1
2.5
Unit
Condition
Delay,
t
D
Rise time,
t
r
Storage,
t
S
Fall Time,
t
f
µs
µs
µs
µs
µs
µs
50% of V
PP
V
CE
=5.0 V
R
L
=75
Ω
Figure 2. Non-saturated switching timing
I
F
Propagation
H-L, t
PHL
Propagation
L-H, t
PLH
Saturated
Characteris-
tic
t
PHL
V
0
t
PLH
t
S
50%
ILD/Q1
I
F
=20 mA
0.8
1.2
7.4
7.6
1.6
8.6
ILD/Q2
ILD/Q5
I
F
=5.0 mA I
F
=10 mA
1.0
2.0
5.4
13.5
5.4
7.4
1.7
7.0
4.6
20
2.6
7.2
Unit
µs
µs
µs
µs
µs
µs
Condition
Delay,
t
D
Rise time,
t
r
Storage,
t
S
Fall Time,
t
f
Propagation
H-L, t
PHL
Propagation
L-H, t
PLH
V
TH
=1.5 V
V
CE
=0.4 V
R
L
=1.0 kΩ
V
CC
=5.0 V
t
D
t
R
t
F
Figure 3. Saturated switching timing
F=10 KHz,
DF=50%
I
F
=10 mA
V
CC
=5 V
R
L
V
O
Figure 5. Normalized non-saturated and saturated
CTR at
T
A
=25°C versus LED current
1.4
V
F
- Forward Voltage - V
1.3
1.2
1.1
1.0
0.9
0.8
0.7
.1
1
10
I
F
- Forward Current - mA
100
T
A
= 100°C
T
A
= -55°C
T
A
= 25°C
Figure 4. Saturated switching timing
I
F
Figure 6. Normalized non-saturated and saturated
CTR at
T
A
=25°C versus LED current
CTRNF - Normalized CTR Factor
t
D
V
O
t
R
t
PLH
V
TH
=1.5 V
t
PHL
t
S
t
F
1.5
Normalized to:
V
CE
= 10 V, I
F
= 10 mA
T
A
= 25°C
CTRce(sat) V
CE
= 0.4 V
NCTR
0.5
NCTR(SAT)
0.0
1.0
.1
1
10
I
F
- LED Current - mA
100
2001 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA
www.infineon.com/opto • 1-888-Infineon (1-888-463-4636)
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ILD/Q1/2/5
March 17, 2000-13
Figure 7. Normalized non-saturated and saturated
CTR at
T
A
=50°C versus LED current
CTRNF - Normalized CTR Factor
1.5
Normalized to:
V
CE
= 10 V, I
F
= 10 mA
T
A
= 25°C
CTRce(sat) V
CE
= 0.4 V
T
A
= 50°C
0.5
NCTR(SAT)
0.0
.1
1
10
I
F
- LED Current - mA
100
NCTR
Figure 10. Collector-emitter current versus temperature and
LED current
35
Ice - Collector Current - mA
30
25
20
15
10
5
0
0
10
20
30
40
IF - LED Current - mA
50
60
25°C
85°C
70°C
50°C
1.0
Figure 8. Normalized non-saturated and saturated CTR
at
T
A
=70°C versus LED current
CTR - Normalized CTR Factor
1.5
Normalized to:
V
CE
= 10 V, I
F
= 10 mA
T
A
= 25°C
CTRce(sat) V
CE
= 0.4 V
T
A
= 70°C
0.5
NCTR(SAT)
0.0
NCTR
Figure 11. Collector-emitter leakage current versus
temperature
I
CEO
- Collector-Emitter - nA
10
5
10
4
10
3
10
2
10
1
10
0
10
-1
10
-2
-20
0
20
40
60
80
T
A
- Ambient Temperature -
°C
100
Typical
V
CE
= 10 V
1.0
.1
1
10
I
F
- LED Current - mA
100
Figure 9. Normalized non-saturated and saturated CTR
at
T
A
=85°C versus LED current
1.5
NCTR - Normalized CTR
Normalized to:
V
CE
= 10 V, I
F
= 10 mA,
T
A
= 25°C
CTRce(sat) V
CE
= 0.4 V
T
A
= 85°C
0.5
NCTR(SAT)
0.0
.1
1
10
I
F
- LED Current - mA
100
NCTR
Figure 12. Propagation delay versus collector load
resistor
t
pLH
- Propagation Low-High -
µs
2.5
T
A
= 25°C, I
F
= 10 mA
V
CC
= 5 V, Vth = 1.5 V
t
pLH
t
pHL
- Propagation High-Low -
µs
1000
1.0
100
2.0
10
t
pHL
1
.1
1
10
1.5
1.0
100
R
L
- Collector Load Resistor - KΩ
2001 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA
www.infineon.com/opto • 1-888-Infineon (1-888-463-4636)
2–176
ILD/Q1/2/5
March 17, 2000-13
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