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TS6P06GX0G

Description
Bridge Rectifier Diode,
CategoryDiscrete semiconductor    diode   
File Size235KB,4 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
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TS6P06GX0G Overview

Bridge Rectifier Diode,

TS6P06GX0G Parametric

Parameter NameAttribute value
MakerTaiwan Semiconductor
package instructionR-PSFM-T4
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresUL RECOGNIZED
Minimum breakdown voltage800 V
ConfigurationBRIDGE, 4 ELEMENTS
Diode component materialsSILICON
Diode typeBRIDGE RECTIFIER DIODE
JESD-30 codeR-PSFM-T4
Maximum non-repetitive peak forward current150 A
Number of components4
Phase1
Number of terminals4
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current6 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Maximum repetitive peak reverse voltage800 V
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE

TS6P06GX0G Preview

TS6P01G thru TS6P07G
Taiwan Semiconductor
CREAT BY ART
FEATURES
- Glass passivated junction
- Ideal for printed circuit board
- Typical IR less than 0.1μA
- High surge current capability
- UL Recognized File # E-326243
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
Glass Passivated Bridge Rectifiers
TS-6P
MECHANICAL DATA
Case:
TS-6P
Molding compound, UL flammability classification rating 94V-0
Packing code with suffix "G" means halogen-free
Terminal:
Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class
1A
whisker test
Polarity:
Polarity as marked on the body
Mounting torque:
8.17 in-lbs maximum
Weight:
7.15 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
Rating for fusing (t<8.3ms)
Maximum instantaneous forward voltage (Note 1)
@3A
@6A
Maximum DC reverse current
at rated DC blocking voltage
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: Pulse test with PW=300μs, 1% duty cycle
T
J
=25 °C
T
J
=125 °C
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
I
2
t
V
F
TS6P
01G
50
35
50
TS6P
02G
100
70
100
TS6P
03G
200
140
200
TS6P
04G
400
280
400
6
150
93
1.0
1.1
10
500
1.8
- 55 to +150
- 55 to +150
TS6P
05G
600
420
600
TS6P
06G
800
560
800
TS6P
07G
1000
700
1000
UNIT
V
V
V
A
A
A
2
s
V
I
R
R
θJC
T
J
T
STG
μA
°C/W
°C
°C
Document Number: DS_D1410101
Version: J14
TS6P01G thru TS6P07G
Taiwan Semiconductor
ORDERING INFORMATION
PART NO.
PACKING CODE
C2
X0
D2
G
PACKING CODE
SUFFIX
TS6P0xG
(Note 1)
TS-6P
TS-6P
TS-6P
15 / TUBE
Forming
15 / TUBE (Auto)
PACKAGE
PACKING
Note 1: "x" defines voltage from 50V (TS6P01G) to 1000V (TS6P07G)
EXAMPLE
PREFERRED P/N
TS6P07G C2
TS6P07G C2G
PART NO.
TS6P07G
TS6P07G
PACKING CODE
C2
C2
G
Green compound
PACKING CODE
SUFFIX
DESCRIPTION
RATINGS AND CHARACTERISTICS CURVES
(T
A
=25°C unless otherwise noted)
FIG.1- MAXIMUM FORWARD CURRENT
DERATING CURVE
INSTANTANEOUS REVERSE CURRENT (μA)
FIG. 2- TYPICAL REVERSE CHARACTERISTICS
100
6
AVERAGE FORWARD
A
CURRENT (A)
T
J
=100°C
10
3
RESISTIVE OR
INDUCTIVE LOAD
WITH HEATSINK
0
50
100
150
1
0
CASE TEMPERATURE. (
o
C)
T
J
=25°C
0.1
0
20
40
60
80
100
120
140
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
FIG.3- MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
175
PEAK FORWARD SURGE CURRENT (A)
150
125
100
75
50
25
0
1
10
NUMBER OF CYCLES AT 60Hz
100
INSTANTANEOUS FORWARD CURRENT (A)
100
FIG. 4- TYPICAL FORWARD CHARACTERISTICS
10
1
Pulse Width=300μs
1% Duty Cycle
0.1
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
FORWARD VOLTAGE (V)
Document Number: DS_D1410101
Version: J14
TS6P01G thru TS6P07G
Taiwan Semiconductor
FIG. 5- TYPICAL JUNCTION CAPACITANCE
1000
900
JUNCTION CAPACITANCE (pF)
A
800
700
600
500
400
300
200
100
0
0.1
1
10
100
1000
REVERSE VOLTAGE (V)
f=1.0MHz
Vsig=50mVp-p
PACKAGE OUTLINE DIMENSIONS
TS-6P
DIM.
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Unit (mm)
Min
29.70
2.30
2.00
0.90
9.80
7.30
19.70
-
3.80
17.00
4.40
3.40
10.80
3.10
2.50
0.65
Max
30.30
2.70
2.40
1.10
10.20
7.70
20.30
4.80
4.20
18.00
4.80
3.80
11.20
3.40
2.90
0.75
Unit (inch)
Min
1.169
0.091
0.079
0.035
0.386
0.287
0.776
-
0.150
0.669
0.173
0.134
0.425
0.122
0.098
0.026
Max
1.193
0.106
0.094
0.043
0.402
0.303
0.799
0.189
0.165
0.709
0.189
0.150
0.441
0.134
0.114
0.030
MARKING DIAGRAM
P/N
G
YWW
F
= Specific Device Code
= Green Compound
= Date Code
= Factory Code
Document Number: DS_D1410101
Version: J14
TS6P01G thru TS6P07G
Taiwan Semiconductor
CREAT BY ART
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied,to
any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or seling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
Document Number: DS_D1410101
Version: J14

TS6P06GX0G Related Products

TS6P06GX0G TS6P04GX0 TS6P05GC2 TS6P05GX0G TS6P06GC2
Description Bridge Rectifier Diode, Bridge Rectifier Diode, Bridge Rectifier Diode, Bridge Rectifier Diode, Bridge Rectifier Diode,
Maker Taiwan Semiconductor Taiwan Semiconductor Taiwan Semiconductor Taiwan Semiconductor Taiwan Semiconductor
Reach Compliance Code compliant compliant compliant compliant compliant
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99
Other features UL RECOGNIZED UL RECOGNIZED UL RECOGNIZED UL RECOGNIZED UL RECOGNIZED
Minimum breakdown voltage 800 V 400 V 600 V 600 V 800 V
Configuration BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS
Diode component materials SILICON SILICON SILICON SILICON SILICON
Diode type BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
JESD-30 code R-PSFM-T4 R-PSFM-T4 R-PSFM-T4 R-PSFM-T4 R-PSFM-T4
Maximum non-repetitive peak forward current 150 A 150 A 150 A 150 A 150 A
Number of components 4 4 4 4 4
Phase 1 1 1 1 1
Number of terminals 4 4 4 4 4
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C
Minimum operating temperature -55 °C -55 °C -55 °C -55 °C -55 °C
Maximum output current 6 A 6 A 6 A 6 A 6 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Maximum repetitive peak reverse voltage 800 V 400 V 600 V 600 V 800 V
surface mount NO NO NO NO NO
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE SINGLE SINGLE SINGLE
package instruction R-PSFM-T4 R-PSFM-T4 - R-PSFM-T4 -

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