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2038-23-SM

Description
UNIDIRECTIONAL, SILICON, TVS DIODE
CategoryDiscrete semiconductor    diode   
File Size333KB,3 Pages
ManufacturerBourns
Websitehttp://www.bourns.com
Download Datasheet Parametric Compare View All

2038-23-SM Overview

UNIDIRECTIONAL, SILICON, TVS DIODE

2038-23-SM Parametric

Parameter NameAttribute value
MakerBourns
package instructionO-LELF-R2
Contacts2
Reach Compliance Codecompli
ECCN codeEAR99
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 codeO-LELF-R2
Number of components1
Number of terminals2
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
polarityUNIDIRECTIONAL
Certification statusNot Qualified
surface mountYES
technologyAVALANCHE
Terminal formWRAP AROUND
Terminal locationEND
Base Number Matches1
*R
oH
VE S CO
AV R M
AI SIO PL
LA N IA
BL S NT
E
Features
Balanced Mini-TRIGARD™
High surge current rating, low insertion loss
Stable breakdown throughout life
RoHS compliant* versions available
(5 mm diameter, 7.5 mm length)
Ideal for board level protection of
broadband circuits
Symmetrical breakdown voltage (L-L, L-G)
Leadless, surface mount for economical
assembly
2038 Series Miniature Symmetrical 3-Electrode Surface Mount Gas Discharge Tube
Bourns offers a symmetrical surface mount (SM) 3-electrode GDT surge protection device. The industry-leading quality and features of the
Bourns
®
miniature-TRIGARD
TM
series GDT continue in the 2038 symmetrical version. The 2038 series is ideal for board level protection of
high bandwidth applications such as xDSL, cable broadband and high speed Ethernet, due to its symmetrical turn on characteristics as well as
high energy-handling capability, long and stable life performance and low capacitance of less than 1 pF. The 2038 series breakdown
voltages are nearly equal line to line as well as line to ground. Bourns
®
Gas Discharge Tubes (GDT) are designed to prevent damage from
transient disturbances by acting as a “crowbar” in creating a virtual short-to-ground circuit during conduction. When an electrical surge
exceeds the defined breakdown voltage level of the GDT, the gas becomes ionized and rapid conduction takes place. When the surge passes
and the system voltage returns to normal levels, the GDT returns to its high-impedance (off) state.
Characteristics
Test Methods per ITU-T (CCITT) K.12 and IEEE C62.31
Characteristic
DC Sparkover ± 25 % @ 100 V/s
L1/L2 to Gnd
(NOTE 1)
Typical Impulse Sparkover
L1/L2 to Gnd
100V/μs
1000V/μs
Characteristic
DC Sparkover ± 25 % @ 100 V/s
L1/L2 to Gnd
(NOTE 1)
Typical Impulse Sparkover
L1/L2 to Gnd
100V/μs
1000V/μs
Model No.
2038-15-SM
2038-20-SM
2038-23-SM
2038-30-SM
2038-35-SM
150 V
200 V
230 V
300 V
350 V
350 V
500 V
2038-42-SM
425 V
575 V
2038-47-SM
450 V
600 V
Model No.
2038-60-SM
500 V
650 V
2038-80-SM
600 V
750 V
2038-110-SM
420 V
470 V
600 V
800 V
1100 V
675 V
850 V
750 V
950 V
850 V
1100 V
1150 V
1400 V
1500 V
1700 V
Impulse Transverse Delay ............................... 100 V/µs............................................................< 50 ns
Insulation Resistance (IR) ............................... 100 V ................................................................> 10
9
Ω
Glow Voltage ................................................... 10 mA................................................................~ 70 V
Arc Voltage ...................................................... 1 A .....................................................................~ 10 V
Glow-Arc Transition Current .......................................................................................................< 0.5 A
Capacitance..................................................... 1 MHz ...............................................................< 1 pF
DC Holdover Voltage
(NOTE 2)
......................... 135 V (80 V for Model 2038-15) .......................< 150 ms
Impulse Discharge Current .............................. 10000 A, 8/20 µs
(NOTE 3)
.................................1 operation min.
5000 A, 8/20 µs .................................................> 10 operations
200 A, 10/1000 µs .............................................> 300 operations
200 A, 10/700 µs ..............................................> 500 operations
10 A, 10/1000 µs ..............................................> 1500 operations
Alternating Discharge Current ......................... 10 Arms, 1 s
(NOTE 3)
........................................1 operation min.
5 Arms, 1 s ........................................................> 10 operations
Operating Temperature............................................................................................................... -40 to +90 °C
Climatic Category (IEC 60068-1)................................................................................................ 40/90/21
Notes:
• 2038-35 UL Recognized
, file E153537, 2038-110 CSA Approved
, file LR93265 (UL 1449).
• The rated discharge current for Mini-TRIGARD™ GDTs is the total current equally divided between each line to ground.
• Surface Mount (SM) parts may show a temporary increase in DCBD after the solder reflow process. Most devices will recover
within 24 hours time. It should be noted that there is no quality defect nor change in protection levels during the temporary change
in DCBD.
• Sparkover limits after life ±30 %. IR >10
8
Ω.
• Operating characteristics per RUS PE-80 and Telcordia GR 1361 available on request.
• At delivery AQL 0.65 Level II, DIN ISO 2859.
1
Line to Line DC Sparkover tolerance typically less than +30 % at 100 V/s.
2
Network applied.
3
DC Sparkover may exceed ±30 % but will continue to protect without venting.
*RoHS Directive 2002/95/EC Jan. 27, 2003 including annex and RoHS Recast 2011/65/EU June 8, 2011.
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.

2038-23-SM Related Products

2038-23-SM 2038-15-SM 2038-20-SM 2038-30-SM
Description UNIDIRECTIONAL, SILICON, TVS DIODE UNIDIRECTIONAL, SILICON, TVS DIODE UNIDIRECTIONAL, SILICON, TVS DIODE UNIDIRECTIONAL, SILICON, TVS DIODE
package instruction O-LELF-R2 O-LELF-R2 O-LELF-R2 O-LELF-R2
Contacts 2 2 2 2
Reach Compliance Code compli compli compli compli
ECCN code EAR99 EAR99 EAR99 EAR99
Shell connection ISOLATED ISOLATED ISOLATED ISOLATED
Configuration SINGLE SINGLE SINGLE SINGLE
Diode component materials SILICON SILICON SILICON SILICON
Diode type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 code O-LELF-R2 O-LELF-R2 O-LELF-R2 O-LELF-R2
Number of components 1 1 1 1
Number of terminals 2 2 2 2
Package body material GLASS GLASS GLASS GLASS
Package shape ROUND ROUND ROUND ROUND
Package form LONG FORM LONG FORM LONG FORM LONG FORM
polarity UNIDIRECTIONAL UNIDIRECTIONAL UNIDIRECTIONAL UNIDIRECTIONAL
Certification status Not Qualified Not Qualified Not Qualified Not Qualified
surface mount YES YES YES YES
technology AVALANCHE AVALANCHE AVALANCHE AVALANCHE
Terminal form WRAP AROUND WRAP AROUND WRAP AROUND WRAP AROUND
Terminal location END END END END
Base Number Matches 1 1 1 1

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