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BSS138W

Description
, Diodes, Single, N, N, 0.2W, 50W, ±20V
CategoryDiscrete semiconductor   
File Size177KB,3 Pages
ManufacturerGalaxy Microelectronics
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BSS138W Overview

, Diodes, Single, N, N, 0.2W, 50W, ±20V

BSS138W Parametric

Parameter NameAttribute value
MakerGalaxy Microelectronics
package instruction,
Reach Compliance Codeunknown
category
ConfigurationSingle
Channel PolarityN
ESDN
Max PD(W)0.2
Min PD(W)50
Max VGS (V)±20
Max ID(A)0.2
Max IGSS(uA)±1
Max VGS(th) (V)1.5
RDS(on)(mΩ) @ 25℃ 10V Typ1400
RDS(on)(mΩ) @ 25℃ 10V Max3500
AEC QualifiedNO
Maximum operating temperature150
Minimum operating temperature-55
MSL level1
Is it lead-free?Yes
Comply with ReachYes
RoHS compliantYes
ECCN codeEAR99
Package OutlinesSOT-323
Product specification
N-Channel Logic Level Enhancement Mode Field Effect Transistor
BSS138W
FEATURES
Low On-Resisrance.
Low Gate Threshold Voltage.
Low Input Capacitance.
Fast Switching Speed.
Low Input/Output Leakage.
Pb
Lead-free
SOT-323
ORDERING INFORMATION
Type No.
BSS138W
Marking
K38
Package Code
SOT-323
□:
none is for Lead Free package;
“G” is for Halogen Free package.
MAXIMUM RATING
@ Ta=25℃ unless otherwise specified
Symbol
V
DSS
Parameter
Drain-Source voltage
Value
50
Units
V
V
DGR
Drain-Gate voltage R
GS
≤20KΩ
50
V
V
GSS
Gate-Surce Voltage
±20
V
I
D
Drain current
-continuous
200
mA
P
D
Power Dissipation
200
mW
℃/W
R
θ
JA
Thermal Resistance,Junction-to-Ambient
625
T
J
, Tstg
Junction and Storage Temperature
-55 to +150
MTM0058A
www.gmesemi.com
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