TSKS5400
Vishay Telefunken
GaAs Infrared Emitting Diode in Side View Package
Description
TSKS5400 is a standard GaAs infrared emitting diode
in a flat sideview molded plastic package. A small
recessed spherical lens provides an improved radiant
intensity in a low profile case.
The diode is case compatible to the TEKS5400
photodetector, allowing the user to assemble his own
optical sensor.
Features
D
Side view package with spherical lens
D
Radiation direction perpendicular to
mounting direction
14 354
D
D
D
D
Angle of half sensitivity
ϕ
=
±
30
°
Peak wavelength
l
P
= 950 nm
Case compatible with TEKS5400
Ordering code:
TSKS5400-ESZ (2.54 mm Pin distance)
Absolute Maximum Ratings
T
amb
= 25
_
C
Parameter
Reverse voltage
Forward current
Surge forward current
Power dissipation
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
Thermal resistance junction/ ambient
Test Conditions
Symbol
V
R
I
F
I
FSM
P
V
T
j
T
stg
T
stg
T
sd
R
thJA
Value
6
100
2
170
100
–25 to +85
–40 to +100
260
450
Unit
V
mA
A
mW
°
C
°
C
°
C
°
C
k/W
t
p
x
100
m
s
t
x
5 s, 2 mm from body
Document Number 83780
Rev. A7, 15-Dez-99
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TSKS5400
Vishay Telefunken
Basic Characteristics
T
amb
= 25
_
C
Parameter
Forward voltage
Reverse voltage
Junction capacitance
Radiant intensity
Radiant power
Temp. coefficient of
f
e
Angle of half sensitivity
Peak wavelength
Spectral bandwidth
Rise time
Fall time
Test Conditions
I
F
= 100 mA, t
p
20 ms
I
R
= 10
m
A
V
R
=0 V, f = 1 MHz, E = 0
I
F
= 50 mA, t
p
20 ms
I
F
= 50 mA, t
p
20 ms
I
F
= 50 mA
x
x
x
Symbol
V
F
V
VR
C
j
I
e
TK
f
e
ϕ
Min
6
Typ
1.3
50
Max
1.7
f
e
2
10
–1
±30
950
50
400
450
7
I
F
= 50 mA
I
F
= 50 mA
I
F
= 1 A, t
p
/T = 0.01, t
p
I
F
= 1 A, t
p
/T = 0.01, t
p
x
10
m
s
x
10
m
s
10
4
I
F
– Forward Current ( mA )
10
3
10
2
10
1
10
0
10
–1
l
p
Dl
t
r
t
f
Unit
V
V
pF
mW/ sr
mW
%K
°
nm
nm
ns
ns
Typical Characteristics
(T
amb
= 25
_
C unless otherwise specified)
200
P
V
– Power Dissipation ( mW )
150
R
thJA
100
50
0
0
14846
20
40
60
80
100
94 7996 e
0
1
2
3
4
T
amb
– Ambient Temperature (
°C
)
V
F
– Forward Voltage ( V )
Figure 1. Power Dissipation vs. Ambient Temperature
125
100
75
50
25
0
0
14847
Figure 3. Forward Current vs. Forward Voltage
1.5
V
Frel
– Relative Forward Voltage
1.4
1.3
1.2
1.1
1.0
0.9
0.8
–45 –30 –15
14347
I
F
= 10 mA
I
F
– Forward Current ( mA )
R
thJA
20
40
60
80
100
0
15
30
45
60
75
90
T
amb
– Ambient Temperature (
°C
)
T
amb
– Ambient Temperature (
°C
)
Figure 2. Forward Current vs. Ambient Temperature
Figure 4. Relative Forward Current vs.
Ambient Temperature
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Document Number 83780
Rev. A7, 15-Dez-99
TSKS5400
Vishay Telefunken
100
I
e
– Radiant Intensity ( mW/sr )
1.25
F
e rel
– Relative Radiant Power
10
1.0
0.75
0.5
1
tp / T = 0.001
tp = 100
m
s
0.1
0.25
I
F
= 100 mA
0
900
0.01
10
0
94 7913 e
10
1
10
2
10
3
10
4
94 7994 e
I
F
– Forward Current ( mA )
l
– Wavelength ( nm )
0°
10
°
20
°
950
1000
Figure 5. Radiant Intensity vs. Forward Current
Figure 8. Relative Radiant Power vs. Wavelength
30°
I
e rel
– Relative Radiant Intensity
100.0
F
e
– Radiant Power ( mW )
40°
1.0
0.9
0.8
0.7
50°
60°
70°
80°
10.0
1.0
0.1
1
13718
10
100
1000
14349
0.6
0.4
0.2
0
0.2
0.4
0.6
I
F
– Forward Current ( mA )
Figure 6. Radiant Power vs. Forward Current
1.6
1.4
1.2
I
e rel
;
F
e rel
1.0
0.8
0.6
0.4
0.2
0
–45 –30 –15
14348
Figure 9. Relative Radiant Intensity vs.
Angular Displacement
I
F
= 10 mA
0
15
30
45
60
75
90
T
amb
– Ambient Temperature (
°C
)
Figure 7. Relative Radiant Intensity vs.
Ambient Temperature
Document Number 83780
Rev. A7, 15-Dez-99
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TSKS5400
Vishay Telefunken
Ozone Depleting Substances Policy Statement
It is the policy of
Vishay Semiconductor GmbH
to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances ( ODSs ).
The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH
has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency ( EPA ) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively.
Vishay Semiconductor GmbH
can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423
Document Number 83780
Rev. A7, 15-Dez-99
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