Target Specifications
Datasheet
RJF0606JPE
60V-40A Silicon N Channel Thermal FET
Power Switching
Description
This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in
over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of
high junction temperature like applying over power consumption, over current etc..
R07DS0580EJ0300
Rev.3.00
May 15, 2013
Features
•
•
•
•
•
•
•
Logic level operation (4 V Gate drive).
Built-in the over temperature shut-down circuit.
High endurance capability against to the short circuit.
Latch type shut down operation (need 0 voltage recovery).
Built-in the current limitation circuit.
Power supply voltage applies 12 V and 24 V.
AEC-Q101 Compliant
Outline
RENESAS Package code: PRSS0004AE-B
(Package name: LDPAK (S)-(1) )
4
Current
Limitation
Circuit
Gate
Shut-down
Circuit
2,4
1
Gate Resistor
Temperature
Sensing
Circuit
Latch
Circuit
1. Gate
2. Drain
3. Source
4. Drain
1
2
3
3
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Drain to source voltage
V
DSS
Gate to source voltage
V
GSS
Gate to source voltage
V
GSS
Drain current
I
D Note3
Body-drain diode reverse drain current
I
DR
Avalanche current
I
AP Note 2
Note 2
Avalanche energy
E
AR
Channel dissipation
Pch
Note 1
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. Value at Tc = 25°C
2. Tch = 25°C, Rg
≥
50
Ω
3. It provides by the current limitation lower bound value.
Ratings
60
16
–2.5
40
40
12
617
50
150
–55 to +150
Unit
V
V
V
A
A
A
mJ
W
°C
°C
R07DS0580EJ0300 Rev.3.00
May 15, 2013
Page 1 of 7
RJF0606JPE
Target Specifications
Typical Operation Characteristics
(Ta = 25°C)
Item
Input voltage
Input current
(Gate non shut down)
Input current
(Gate shut down)
Shut down temperature
Gate operation voltage
Drain current
(Current limitation value)
Note;
4. Pulse test
Symbol
V
IH
V
IL
I
IH1
I
IH2
I
IL
I
IH(sd)1
I
IH(sd)2
Tsd
Vop
I
D limt
Min
3.5
—
—
—
—
—
—
—
3.5
40
Typ
—
—
—
—
—
0.8
0.35
175
—
—
Max
—
1.2
100
50
1
—
—
—
12
—
Unit
V
V
μA
μA
μA
mA
mA
°C
V
A
Test Conditions
Vi = 8 V, V
DS
= 0
Vi = 3.5 V, V
DS
= 0
Vi = 1.2 V, V
DS
= 0
Vi = 8 V, V
DS
= 0
Vi = 3.5 V, V
DS
= 0
Channel temperature
V
GS
= 5 V, V
DS
= 10 V
Note 4
Electrical Characteristics
(Ta = 25°C)
Item
Drain current
Symbol
I
D1
I
D2
I
D3
V
(BR)DSS
V
(BR)GSS
V
(BR)GSS
I
GSS1
I
GSS2
I
GSS3
I
GSS4
I
GS(OP)1
I
GS(OP)2
I
DSS
V
GS(off)
|y
fs
|
R
DS(on)
R
DS(on)
Coss
t
d(on)
t
r
t
d(off)
t
f
V
DF
t
rr
t
os1
t
os1
Min
—
—
40
60
16
–2.5
—
—
—
—
—
—
—
1.1
20
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
—
—
—
—
—
—
0.8
0.35
—
—
41
17
12
795
6
21.6
7.2
12.5
0.9
113
0.48
0.31
Max
67
10
—
—
—
—
100
50
1
–100
—
—
10
2.1
—
25
19
—
—
—
—
—
—
—
—
—
Unit
A
mA
A
V
V
V
μA
μA
μA
μA
mA
mA
μA
V
S
mΩ
mΩ
pF
μs
μs
μs
μs
V
ns
ms
ms
Test Conditions
V
GS
= 3.5 V, V
DS
= 10 V
Note 5
V
GS
= 1.2 V, V
DS
= 10 V
V
GS
= 5 V, V
DS
= 10 V
Note 5
I
D
= 10 mA, V
GS
= 0
I
G
= 800
μA,
V
DS
= 0
I
G
= –100
μA,
V
DS
= 0
V
GS
= 8 V, V
DS
= 0
V
GS
= 3.5 V, V
DS
= 0
V
GS
= 1.2 V, V
DS
= 0
V
GS
= –2.4 V, V
DS
= 0
V
GS
= 8 V, V
DS
= 0
V
GS
= 3.5 V, V
DS
= 0
V
DS
= 32 V, V
GS
= 0, Tc = 110°C
V
DS
= 10 V, I
D
= 1 mA
I
D
= 20 A, V
DS
= 10 V
Note 5
I
D
= 20 A, V
GS
= 4 V
Note 5
I
D
= 20 A, V
GS
= 10 V
Note 5
V
DS
= 10 V, V
GS
= 0, f = 1MHz
V
GS
= 10 V, I
D
= 20 A, R
L
= 1.5
Ω
Drain to source breakdown
voltage
Gate to source breakdown
voltage
Gate to source leak current
Input current (shut down)
Zero gate voltage drain current
Gate to source cutoff voltage
Forward transfer admittance
Static drain to source on state
resistance
Output capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body-drain diode forward
voltage
Body-drain diode reverse
recovery time
Over load shut down
Note 6
operation time
I
F
= 40 A, V
GS
= 0
I
F
= 40 A, V
GS
= 0
di
F
/dt = 50 A/μs
V
GS
= 5 V, V
DD
= 16 V
V
GS
= 5 V, V
DD
= 24 V
Notes: 5. Pulse test
6. Including the junction temperature rise of the over loaded condition.
R07DS0580EJ0300 Rev.3.00
May 15, 2013
Page 2 of 7
RJF0606JPE
Target Specifications
Main Characteristics
Power vs. Temperature Derating
60
Maximum Safe Operation Area
100
Thermal shut down
Operation area
Pch (W)
I
D
(A)
50
40
10
PW = 10 ms
Channel Dissipation
1 ms
30
20
10
0
0
50
100
150
200
Drain Current
1
Operation in
this area is
limited by R
DS (on)
DC Operation
(Tc = 25°C)
0.1
0.01
0.1
1
10
100
Case Temperature
Tc (°C)
Drain to Source Voltage V
DS
(V)
Typical Output Characteristics
80
70
9V
10 V
Typical Transfer Characteristics
40
V
DS
= 10 V
Pulse Test
I
D
(A)
I
D
(A)
Drain Current
60
50
40
30
20
10
Pulse Test
0
0
2
4
6
8
10
V
GS
= 3 V
8V
5V
4V
30
Drain Current
20
25°C
10
Tc = –40°C
0
0
1
2
3
4
5
Drain to Source Voltage
V
DS
(V)
Gate to Source Voltage
V
GS
(V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Static Drain to Source on State Resistance
vs. Drain Current
Drain to Source Saturation Voltage
V
DS (on)
(mV)
800
Pulse Test
Drain to Source on State Resistance
R
DS (on)
(mΩ)
1000
Pulse Test
600
100
V
GS
= 4 V
10
10 V
400
I
D
= 20 A
200
10 A
5A
0
2
4
6
8
10
0
1
0.1
1
10
100
Gate to Source Voltage V
GS
(V)
Drain Current
I
D
(A)
R07DS0580EJ0300 Rev.3.00
May 15, 2013
Page 3 of 7
RJF0606JPE
Static Drain to Source on State Resistance
vs. Temperature
Forward Transfer Admittance |yfs| (S)
35
30
25
20
V
GS
= 4 V
15
10
10 V
5
–50 –25 0
I
D
= 5, 10 A
5A
20 A
Pulse Test
I
D
= 20 A
10 A
100
Target Specifications
Forward Transfer Admittance vs.
Drain Current
V
DS
= 10 V
Pulse Test
Tc = –40°C
Static Drain to Source on State Resistance
R
DS (on)
(mΩ)
25°C
10
150°C
1
25
50
75 100 125 150
0.1
0.1
1
10
100
Case Temperature
Tc (°C)
Drain Current I
D
(A)
Body-Drain Diode Reverse
Recovery Time
Reverse Recovery Time trr (ns)
1000
100
Switching Characteristics
Switching Time t (μs)
tr
tf
td(off)
td(on)
V
GS
= 10 V, V
DD
= 30 V
PW = 300
μs,
duty ≤ 1 %
1
0.1
1
10
100
100
10
di / dt = 50 A /
μs
V
GS
= 0, Ta = 25°C
10
0.1
1
10
100
Reverse Drain Current
I
DR
(A)
Drain Current
I
D
(A)
Reverse Drain Current vs.
Source to Drain Voltage
40
10000
Pulse Test
30
Typical Capacitance vs.
Drain to Source Voltage
V
GS
= 0
f = 1 MHz
Reverse Drain Current I
DR
(A)
Capacitance C (pF)
3000
1000
300
100
30
Coss
20
V
GS
= 5 V
10
0V
0
0
0.4
0.8
1.2
1.6
2.0
10
0
10
20
30
40
50
60
Source to Drain Voltage V
SD
(V)
Drain to Source Voltage V
DS
(V)
R07DS0580EJ0300 Rev.3.00
May 15, 2013
Page 4 of 7
RJF0606JPE
Gate to Source Voltage vs.
Shutdown Time of Load-Short Test
V
GS
(V)
16
14
12
10
8
6
4
2
0
10
100
1000
10000
24 V
V
DD
= 16 V
Target Specifications
Shutdown Case Temperature vs.
Gate to Source Voltage
Shutdown Case Temperature Tc (°C)
200
180
Gate to Source Voltage
160
140
120
I
D
= 5 A
100
0
2
4
6
8
10
Shutdown Time of Load-Short Test
Pw (μS)
Gate to Source Voltage
V
GS
(V)
Normalized Transient Thermal Impedance
γ
s (t)
Normalized Transient Thermal Impedance vs. Pulse Width
3
Tc = 25°C
1
D=1
0.5
0.3
0.2
0.1
0.1
θch
– c (t) =
γ
s (t) •
θch
– c
θch
– c = 2.5°C/W, Tc = 25°C
P
DM
PW
T
1m
10 m
100 m
1
10
D=
PW
T
0.05
0.03
0.02
1
lse
0.0
pu
t
ho
1s
0.01
10
μ
100
μ
Pulse Width PW (S)
R07DS0580EJ0300 Rev.3.00
May 15, 2013
Page 5 of 7
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