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RJH60A81RDPD-A0

Description
600V - 5A - IGBT Application: Inverter
File Size188KB,9 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
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RJH60A81RDPD-A0 Overview

600V - 5A - IGBT Application: Inverter

Preliminary
Datasheet
RJH60A81RDPD-A0
600V - 5A - IGBT
Application: Inverter
Features
Reverse conducting IGBT with monolithic diode
Short circuit withstand time (5
μs
typ.)
Low collector to emitter saturation voltage
V
CE(sat)
= 2.0 V typ. (at I
C
= 5 A, V
GE
= 15 V, Ta = 25°C)
Built-in fast recovery diode (t
rr
= 100 ns typ.) in one package
Trench gate and thin wafer technology
High speed switching
t
f
= 75 ns typ. (at V
CC
= 300 V, V
GE
= 15 V, I
C
= 5 A, Rg = 5
Ω,
Ta = 25°C, inductive load)
R07DS1092EJ0100
Rev.1.00
Jul 04, 2013
Outline
RENESAS Package code: PRSS0004ZK-A
(Package name : TO-252A)
4
C
12
3
G
1. Gate
2. Collector
3. Emitter
4. Collector
E
Absolute Maximum Ratings
(Ta = 25°C)
Item
Collector to emitter voltage / diode reverse voltage
Gate to emitter voltage
Collector current
Tc = 25°C
Tc = 100°C
Collector peak current
Collector to emitter diode forward current
Collector to emitter diode forward peak current
Collector dissipation
Junction to case thermal resistance (IGBT)
Junction temperature
Storage temperature
Notes: 1. PW
10
μs,
duty cycle
1%
2. Value at Tc = 25°C
Symbol
V
CES
/ V
R
V
GES
I
C
I
C
Ic(peak)
i
DF
i
DF
(peak)
Note1
P
C Note2
θj-c
Note2
Tj
Tstg
Note1
Ratings
600
±30
10
5
15
5
15
29.4
4.25
150
–55 to +150
Unit
V
V
A
A
A
A
A
W
°C/
W
°C
°C
R07DS1092EJ0100 Rev.1.00
Jul 04, 2013
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