Preliminary Data
SIPMOS
Small-Signal-Transistor
Features
•
Single N channel
•
BSO 304SN
Product Summary
Drain source voltage
Drain-Source on-state resistance
Continuous drain current
V
DS
R
DS(on)
I
D
30
0.03
6.4
V
Ω
A
Enhancement mode
•
Avalanche rated
•
Logic Level
•
dv/dt rated
Type
BSO 304 SN
Parameter
Continuous drain current
Package
SO 8
Symbol
Ordering Code
Q67000-S4012
Value
6.4
25.6
90
6.4
0.2
6
mJ
A
mJ
kV/µs
Unit
A
Maximum Ratings,
at
T
j = 25 ˚C, unless otherwise specified
I
D
I
Dpulse
E
AS
I
AR
E
AR
dv/dt
T
A
= 25 ˚C
Pulsed drain current
T
A
= 25 ˚C
Avalanche energy, single pulse
I
D
= 6.4 A,
V
DD
= 25 V,
R
GS
= 25
Ω
Avalanche current,periodic limited by
T
jmax
Avalanche energy, periodic limited by
T
jmax
Reverse diode dv/dt
I
S
= 6.4 A,
V
DS
= 24 V, di/dt = 200 A/µs,
T
jmax
= 150 ˚C
Gate source voltage
Power dissipation
V
GS
P
tot
T
j
T
stg
±20
2
-55 ... +150
-55 ... +150
55/150/56
V
W
˚C
T
A
= 25 ˚C
Operating temperature
Storage temperature
IEC climatic category; DIN IEC 68-1
Data Sheet
1
05.99
BSO 304SN
Thermal Characteristics
Parameter
Characteristics
Thermal resistance, junction - soldering point
Thermal resistance @ 10 sec., min. footprint
Thermal resistance @ 10 sec.,
6 cm
2
cooling area
1)
Symbol
min.
Values
typ.
-
-
-
max.
35
80
62.5
K/W
Unit
R
thJS
R
th(JA)
R
th(JA)
-
-
-
Electrical Characteristics,
at
T
j = 25 ˚C, unless otherwise specified
Symbol
Values
Parameter
min.
Static Characteristics
Drain- source breakdown voltage
Unit
max.
-
2
µA
V
typ.
-
1.6
V
(BR)DSS
V
GS(th)
I
DSS
30
1.2
V
GS
= 0 V,
I
D
= 0.25 mA
Gate threshold voltage,
V
GS
=
V
DS
I
D
= 30 µA
Zero gate voltage drain current
V
DS
= 30 V,
V
GS
= 0 V,
T
j
= 25 ˚C
V
DS
= 30 V,
V
GS
= 0 V,
T
j
= 150 ˚C
Gate-source leakage current
-
-
0.1
10
10
1
100
100
nA
Ω
I
GSS
R
DS(on)
-
V
GS
= 20 V,
V
DS
= 0 V
Drain-Source on-state resistance
V
GS
= 4.5 V,
I
D
= 5.5 A
V
GS
= 10 V,
I
D
= 6.4 A
-
-
0.03
0.02
0.042
0.03
1 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70µm thick) copper area for drain
connection. PCB is vertical without blown air.
Data Sheet
2
05.99
BSO 304SN
Electrical Characteristics
Parameter
Characteristics
Symbol
min.
Values
typ.
max.
Unit
Transconductance
g
fs
C
iss
C
oss
C
rss
t
d(on)
6
-
-
-
-
13
620
270
130
15
-
775
340
165
23
S
pF
V
DS
≥2*
I
D
*R
DS(on)max
,
I
D
= 5.5 A
Input capacitance
V
GS
= 0 V,
V
DS
= 25 V,
f
= 1 MHz
Output capacitance
V
GS
= 0 V,
V
DS
= 25 V,
f
= 1 MHz
Reverse transfer capacitance
V
GS
= 0 V,
V
DS
= 25 V,
f
= 1 MHz
Turn-on delay time
ns
V
DD
= 15 V,
V
GS
= 4.5 V,
I
D
= 5.5 A,
R
G
= 10
Ω
Rise time
t
r
-
47
70
V
DD
= 15 V,
V
GS
= 4.5 V,
I
D
= 5.5 A,
R
G
= 10
Ω
Turn-off delay time
t
d(off)
-
16
24
V
DD
= 15 V,
V
GS
= 4.5 V,
I
D
= 5.5 A,
R
G
= 10
Ω
Fall time
t
f
-
20
30
V
DD
= 15 V,
V
GS
= 4.5 V,
I
D
= 5.5 A,
R
G
= 10
Ω
Data Sheet
3
05.99
BSO 304SN
Electrical Characteristics,
at
Tj
= 25 ˚C, unless otherwise specified
Parameter
Symbol
Values
at
Tj
= 25 ˚C, unless otherwise specified
Dynamic Characteristics
Gate charge at threshold
min.
typ.
1
15
23
2.97
max.
1.5
23
35
-
Unit
Q
G(th)
Qg(5)
Q
g
V
(plateau)
-
-
-
-
nC
V
DD
= 24 V,
I
D
≥0,1
A,
V
GS
= 0 to 1 V
Gate charge at
V
gs
=5V
V
DD
= 24 V,
I
D
= 5.5 A,
V
GS
= 0 to 5 V
Gate charge total
nC
V
V
DD
= 24 V,
I
D
= 5.5 A,
V
GS
= 0 to 10 V
Gate plateau voltage
V
DD
= 24 V,
I
D
= 5.5 A
Reverse Diode
Inverse diode continuous forward current
I
S
I
SM
V
SD
t
rr
Q
rr
-
-
-
-
-
-
-
0.9
50
43
6.4
25.6
1.2
75
65
A
T
A
= 25 ˚C
Inverse diode direct current,pulsed
T
A
= 25 ˚C
Inverse diode forward voltage
V
ns
µC
V
GS
= 0 V,
I
F
= 11 A
Reverse recovery time
V
R
= 15 V,
I
F
=I
S
, di
F
/dt = 100 A/µs
Reverse recovery charge
V
R
= 15 V,
I
F=
l
S
, di
F
/dt = 100 A/µs
Data Sheet
4
05.99
BSO 304SN
Power dissipation
Drain current
P
tot
=
f
(T
A
)
BSO 304 SN
I
D
=
f
(T
A
)
BSO 304 SN
2.4
W
7.0
A
6.0
2.0
5.5
1.8
5.0
4.5
P
tot
1.6
I
D
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0
20
40
60
80
100
120
˚C
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
160
0.0
0
20
40
60
80
100
120
˚C
160
T
A
T
A
Safe operating area
Transient thermal impedance
I
D
=
f
(
V
DS
)
parameter :
D
= 0 ,
T
A
= 25 ˚C
10
2
A
BSO 304 SN
Z
thJA
=
f(t
p
)
parameter :
D= t
p
/T
10
2
/I
D
=
BSO 304 SN
V
D
S
tp
= 4.4µs
10 µs
10
1
R
D
o
S(
n)
K/W
1 ms
10
0
10 ms
Z
thJA
100 µs
10
1
I
D
D = 0.50
0.20
10
0
0.10
single pulse
0.05
0.02
0.01
10
-1
DC
10
-2 -1
10
10
0
10
1
V
10
2
10
-1 -5
-4
-3
-2
-1
0
1
2
10 10 10 10 10 10 10 10
s
10
4
V
DS
t
p
Data Sheet
5
05.99
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