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IRFS4321TRLPBF

Description
High Efficiency Synchronous Rectification in SMPS
CategoryDiscrete semiconductor    The transistor   
File Size352KB,10 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Environmental Compliance
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IRFS4321TRLPBF Overview

High Efficiency Synchronous Rectification in SMPS

IRFS4321TRLPBF Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
Parts packaging codeD2PAK
package instructionSMALL OUTLINE, R-PSSO-G2
Contacts3
Reach Compliance Codecompli
ECCN codeEAR99
Avalanche Energy Efficiency Rating (Eas)120 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage150 V
Maximum drain current (Abs) (ID)83 A
Maximum drain current (ID)75 A
Maximum drain-source on-resistance0.015 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-263AB
JESD-30 codeR-PSSO-G2
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)330 W
Maximum pulsed drain current (IDM)330 A
Certification statusNot Qualified
surface mountYES
Terminal surfaceMATTE TIN OVER NICKEL
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperature30
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
PD - 97105C
IRFS4321PbF
IRFSL4321PbF
Applications
l
Motion Control Applications
l
High Efficiency Synchronous Rectification in SMPS
l
Uninterruptible Power Supply
l
Hard Switched and High Frequency Circuits
Benefits
l
Low R
DSON
Reduces Losses
l
Low Gate Charge Improves the Switching
Performance
l
Improved Diode Recovery Improves Switching &
EMI Performance
l
30V Gate Voltage Rating Improves Robustness
l
Fully Characterized Avalanche SOA
HEXFET
®
Power MOSFET
V
DSS
R
DS(on)
typ.
max.
I
D
D
D
150V
12m
:
15m
:
85A
c
D
G
S
G
D
S
G
D
S
D
2
Pak
TO-262
IRFS4321PbF IRFSL4321PbF
D
S
G
Gate
Drain
Source
Absolute Maximum Ratings
Symbol
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
V
GS
E
AS (Thermally limited)
T
J
T
STG
Parameter
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
d
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
e
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Max.
85
c
60
330
350
2.3
±30
120
-55 to + 175
300
Units
A
W
W/°C
V
mJ
°C
Thermal Resistance
Parameter
R
θJC
R
θJA
Junction-to-Case
g
Junction-to-Ambient
g
Typ.
–––
–––
Max.
0.43*
40
Units
°C/W
* R
θJC
(end of life) for D
2
Pak and TO-262 = 0.65°C/W. This is the maximum measured value after 1000 temperature
cycles from -55 to 150°C and is accounted for by the physical wearout of the die attach medium.
Notes

through
…
are on page 2
www.irf.com
1
12/9/10
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