2N5153HR
Datasheet
Rad-Hard 80 V, 5 A PNP bipolar transistor
Features
V
CEO
2
3
1
I
C
(max.)
h
FE
at
5 V, 2.5 A
> 70
Operating
temperature
range
-65 °C to +200 °C
2
3
1
80 V
5A
TO-257
•
•
•
Hermetic package
ESCC qualified
Up to 100 krad(Si) low dose rate
SMD.5
Description
The
2N5153HR
is a PNP bipolar transistor specifically designed and housed in
hermetic packages for aerospace and Hi-Rel applications. It is qualified in the ESCC
qualification system (ESCC 5000 compliance).
In case of discrepancies between this datasheet and the relevant agency
specification, the latter takes precedence.
Base and Emitter are inverted for
2N5153RSRHRx and 2N5153SRHRx series
AM3128V1_n
Product summary
Product summary
Device
2N5153ESYHRx
2N5153RESYHRx
2N5153RSHRx
2N5153SHRx
2N5153RSRHRx
2N5153SRHRx
Qualification
system
ESCC Flight
ESCC Flight
ESCC Flight
ESCC Flight
ESCC Flight
ESCC Flight
Agency
specification
5204/002
5204/002
5204/002
5204/002
5204/002
5204/002
Package
TO-257
TO-257
SMD.5
SMD.5
SMD.5
SMD.5
Remarks
-
100 krad
100 krad, emitter on pin 1
Emitter on pin 1
100 krad, emitter on pin 2
Emitter on pin 2
Product status link
2N5153HR
DS6099
-
Rev 10
-
June 2020
For further information contact your local STMicroelectronics sales office.
www.st.com
2N5153HR
Electrical ratings
1
Electrical ratings
T
C
= 25 °C unless otherwise specified
Table 1.
Absolute maximum ratings
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
TOT
T
STG
T
J
Collector-base voltage (I
E
= 0)
Collector-emitter voltage (I
B
= 0)
Emitter-base voltage (I
C
= 0)
Collector current
Total dissipation at T
amb
≤ 25 °C for TO-257 and SMD.5
Total dissipation at T
case
≤ 25 °C for TO-257 and SMD.5
Storage temperature range
Max. operating junction temperature
Parameter
Value
100
80
5.5
5
3.3
35
-65 to 200
200
Unit
V
V
V
A
W
W
°C
°C
Table 2.
Thermal data
Symbol
R
thj-case
R
thj-amb
Parameter
Thermal resistance junction-case
Thermal resistance junction-ambient
Value
for TO-257 and SMD.5
5
53
Unit
°C/W
°C/W
DS6099
-
Rev 10
page 2/13
2N5153HR
Electrical characteristics
2
Electrical characteristics
Table 3.
Electrical characteristics (T
amb
= 25 °C unless otherwise specified)
Symbol
Parameter
Test conditions
V
CB
= 60 V, I
E
= 0 A
I
CES
Collector cut-off current
V
CB
= 60 V, I
E
= 0 A,
T
amb
= 150 °C
I
CEO
I
EBO
V
(BR)CEO
(1)
V
CE(sat)
(1)
V
BE(sat)
(1)
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
V
CE
= 40 V, I
B
= 0 A
V
EB
= 4 V, I
C
= 0 A
V
EB
= 5.5 V, I
C
= 0 A
I
C
= 100 mA, I
B
= 0 A
I
C
= 5 A, I
B
= 0.5 A
I
C
= 2.5 A, I
B
= 0.25 A
I
C
= 5 A, I
B
= 0.5 A
I
C
= 50 mA, V
CE
= 5 V
h
FE
DC current gain
I
C
= 2.5 A, V
CE
= 5 V
I
C
= 5 A, V
CE
= 5 V
I
C
= 2.5 A, V
CE
= 5 V, T
amb
= -55 °C
h
fe
C
obo
t
on
t
off
AC forward current transfer ratio
Output capacitance
Turn-on time
Turn-off time
I
C
= 500 mA, f = 20 MHz, V
CE
= 5 V
I
E
= 0 A, f = 1 MHz, V
CB
= 10 V
V
CC
= 30 V, V
BB
= 4 V,
V
in
≈ 51 V, I
C
= 5 A,
I
B1
= I
B2
= 0.5 A
50
70
40
35
3.5
250
0.5
1.3
pF
µs
µs
200
80
1.5
1.45
2.2
Min.
Max.
1
10
50
1
1
µA
Unit
µA
µA
mA
V
V
V
1. Pulsed duration = 300 µs, duty cycle ≤ 2%
Voltage and current values are intended as negative.
DS6099
-
Rev 10
page 3/13
2N5153HR
Electrical characteristics (curves)
3
Electrical characteristics (curves)
Figure 1.
h
FE
at V
CE
= 5 V
h
FE
AM12794v1
Figure 2.
V
CE(sat)
at h
FE
= 10
V
CE(sat)
(V)
AM12795v1
-55°C
25°C
125°C
100
0.1
-55°C
25°C
125°C
10
0.01
0.1
Ic (A)
1
10
0.01
0.01
0.1
Ic (A)
1
10
Figure 3.
V
BE(sat)
at h
FE
= 10
V
BE(sat)
(V)
1.15
1.1
1.05
1
0.95
0.9
0.85
0.8
0.75
0.7
0.65
0.6
0.55
0.5
0.01
0.1
1
-55°C
25°C
125°C
AM12796v1
Figure 4.
V
BEON
at V
CE
= 5 V
V
BE(on)
(V)
1.05
1
0.95
0.9
0.85
[V]
0.8
0.75
0.7
0.65
0.6
0.55
0.5
10
-55°C
25°C
125°C
AM12797v1
Ic (A)
0.45
0.1
1
Ic (A)
10
DS6099
-
Rev 10
page 4/13
2N5153HR
Test circuits
3.1
Test circuits
Figure 5.
ESCC resistive load switching test circuit
Note:
Note:
(1) Fast electronic switch
(2) Non-inductive resistor
DS6099
-
Rev 10
page 5/13
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