DRAM, 8KX8, 250ns, MOS, CDIP28
| Parameter Name | Attribute value |
| Is it Rohs certified? | incompatible |
| Maker | Intel |
| package instruction | DIP, DIP28,.6 |
| Reach Compliance Code | unknown |
| Maximum access time | 250 ns |
| I/O type | COMMON |
| JESD-30 code | R-XDIP-T28 |
| JESD-609 code | e0 |
| memory density | 65536 bit |
| memory width | 8 |
| Number of terminals | 28 |
| word count | 8192 words |
| character code | 8000 |
| Maximum operating temperature | 70 °C |
| Minimum operating temperature | |
| organize | 8KX8 |
| Output characteristics | 3-STATE |
| Package body material | CERAMIC |
| encapsulated code | DIP |
| Encapsulate equivalent code | DIP28,.6 |
| Package shape | RECTANGULAR |
| Package form | IN-LINE |
| Certification status | Not Qualified |
| surface mount | NO |
| technology | MOS |
| Temperature level | COMMERCIAL |
| Terminal surface | Tin/Lead (Sn/Pb) |
| Terminal form | THROUGH-HOLE |
| Terminal pitch | 2.54 mm |
| Terminal location | DUAL |
| D2186-25S7572 | 5962-01-237-7394 | D2186A-30 | D2186A-35 | D2186A-25 | D2186-35S7572 | D2186-30S7572 | |
|---|---|---|---|---|---|---|---|
| Description | DRAM, 8KX8, 250ns, MOS, CDIP28 | DRAM, 8KX8, 250ns, MOS, CDIP28, | DRAM, 8KX8, 300ns, MOS, CDIP28 | DRAM, 8KX8, 350ns, MOS, CDIP28 | DRAM, 8KX8, 250ns, MOS, CDIP28 | DRAM, 8KX8, 350ns, MOS, CDIP28 | DRAM, 8KX8, 300ns, MOS, CDIP28 |
| Is it Rohs certified? | incompatible | incompatible | incompatible | incompatible | incompatible | incompatible | incompatible |
| package instruction | DIP, DIP28,.6 | DIP, DIP28,.6 | DIP, DIP28,.6 | DIP, DIP28,.6 | DIP, DIP28,.6 | DIP, DIP28,.6 | DIP, DIP28,.6 |
| Reach Compliance Code | unknown | compli | unknown | unknown | unknown | unknown | unknown |
| Maximum access time | 250 ns | 250 ns | 300 ns | 350 ns | 250 ns | 350 ns | 300 ns |
| I/O type | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON |
| JESD-30 code | R-XDIP-T28 | R-XDIP-T28 | R-XDIP-T28 | R-XDIP-T28 | R-XDIP-T28 | R-XDIP-T28 | R-XDIP-T28 |
| memory density | 65536 bit | 65536 bi | 65536 bit | 65536 bit | 65536 bit | 65536 bit | 65536 bit |
| memory width | 8 | 8 | 8 | 8 | 8 | 8 | 8 |
| Number of terminals | 28 | 28 | 28 | 28 | 28 | 28 | 28 |
| word count | 8192 words | 8192 words | 8192 words | 8192 words | 8192 words | 8192 words | 8192 words |
| character code | 8000 | 8000 | 8000 | 8000 | 8000 | 8000 | 8000 |
| Maximum operating temperature | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C |
| organize | 8KX8 | 8KX8 | 8KX8 | 8KX8 | 8KX8 | 8KX8 | 8KX8 |
| Output characteristics | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE |
| Package body material | CERAMIC | CERAMIC | CERAMIC | CERAMIC | CERAMIC | CERAMIC | CERAMIC |
| encapsulated code | DIP | DIP | DIP | DIP | DIP | DIP | DIP |
| Encapsulate equivalent code | DIP28,.6 | DIP28,.6 | DIP28,.6 | DIP28,.6 | DIP28,.6 | DIP28,.6 | DIP28,.6 |
| Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| Package form | IN-LINE | IN-LINE | IN-LINE | IN-LINE | IN-LINE | IN-LINE | IN-LINE |
| Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| surface mount | NO | NO | NO | NO | NO | NO | NO |
| technology | MOS | MOS | MOS | MOS | MOS | MOS | MOS |
| Temperature level | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL |
| Terminal form | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
| Terminal pitch | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm |
| Terminal location | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL |
| Maker | Intel | - | Intel | Intel | Intel | - | Intel |
| JESD-609 code | e0 | - | e0 | e0 | e0 | e0 | e0 |
| Terminal surface | Tin/Lead (Sn/Pb) | - | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
| Base Number Matches | - | 1 | 1 | 1 | 1 | 1 | - |
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