VS-ST380CH Series
www.vishay.com
Vishay Semiconductors
Phase Control Thyristors
(Hockey PUK Version), 960 A
FEATURES
• Center amplifying gate
• Metal case with ceramic insulator
• International standard case TO-200AB (E-PUK)
• Extended temperature range
• Low profile hockey PUK to increase current-carrying
capability
TO-200AB (E-PUK)
RoHS
COMPLIANT
• Designed and qualified for industrial level
• Material categorization: For definitions of compliance
please see
www.vishay.com/doc?99912
PRODUCT SUMMARY
Package
Diode variation
I
T(AV)
V
DRM
/V
RRM
V
TM
I
GT
T
J
TO-200AB (E-PUK)
Single SCR
960 A
400 V, 600 V
1.58 V
100 mA
-40 °C to 150 °C
TYPICAL APPLICATIONS
• DC motor controls
• Controlled DC power supplies
• AC controllers
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
I
T(AV)
TEST CONDITIONS
VALUES
960
T
hs
80
2220
I
T(RMS)
T
hs
50 Hz
I
TSM
60 Hz
50 Hz
60 Hz
V
DRM
/V
RRM
t
q
T
J
Typical
25
12 500
A
13 000
782
713
400 to 600
100
-40 to 150
V
µs
°C
kA
2
s
UNITS
A
°C
A
°C
I
2
t
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VOLTAGE
CODE
04
06
V
DRM
/V
RRM
, MAXIMUM REPETITIVE
PEAK AND OFF-STATE VOLTAGE
V
400
600
V
RSM
, MAXIMUM
I
DRM
/I
RRM
MAXIMUM
NON-REPETITIVE PEAK VOLTAGE
AT T
J
= T
J
V
MAXIMUM mA
500
700
100
VS-ST380CH..C
Revision: 20-Dec-13
Document Number: 94411
1
For technical questions within your region:
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-ST380CH Series
www.vishay.com
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average on-state current
at heatsink temperature
Maximum RMS on-state current
SYMBOL
I
T(AV)
I
T(RMS)
TEST CONDITIONS
180° conduction, half sine wave
double side (single side) cooled
DC at 25 °C heatsink temperature double side cooled
t = 10 ms
Maximum peak, one-cycle
non-repetitive surge current
I
TSM
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
Maximum I
2
t for fusing
I
2
t
t = 8.3 ms
t = 10 ms
t = 8.3 ms
Maximum I
2
√t
for fusing
Low level value of threshold voltage
High level value of threshold voltage
Low level value of on-state slope resistance
High level value of on-state slope resistance
Maximum on-state voltage
Maximum holding current
Typical latching current
I
2
√t
V
T(TO)1
V
T(TO)2
r
t1
r
t2
V
TM
I
H
I
L
No voltage
reapplied
100 % V
RRM
reapplied
No voltage
reapplied
100 % V
RRM
reapplied
VALUES
960 (440)
80 (110)
2220
12 500
13 000
10 500
Sinusoidal half wave,
initial T
J
= T
J
maximum
11 000
782
713
553
505
7820
0.85
0.88
0.25
0.24
1.58
600
1000
kA
2
√s
V
kA
2
s
A
UNITS
A
°C
t = 0.1 to 10 ms, no voltage reapplied
(16.7 % x
π
x I
T(AV)
< I <
π
x I
T(AV)
), T
J
= T
J
maximum
(I >
π
x I
T(AV)
), T
J
= T
J
maximum
(16.7 % x
π
x I
T(AV)
< I <
π
x I
T(AV)
), T
J
= T
J
maximum
(I >
π
x I
T(AV)
), T
J
= T
J
maximum
I
pk
= 2900 A, T
J
= T
J
maximum, t
p
= 10 ms sine pulse
T
J
= 25 °C, anode supply 12 V resistive load
mΩ
V
mA
SWITCHING
PARAMETER
Maximum non-repetitive rate of rise
of turned-on current
Typical delay time
Typical turn-off time
SYMBOL
dI/dt
t
d
t
q
TEST CONDITIONS
Gate drive 20 V, 20
Ω,
t
r
≤
1 μs
T
J
= T
J
maximum, anode voltage
≤
80 % V
DRM
Gate current 1 A, dI
g
/dt = 1 A/μs
V
d
= 0.67 % V
DRM
, T
J
= 25 °C
I
TM
= 550 A, T
J
= T
J
maximum, dI/dt = 40 A/μs,
V
R
= 50 V, dV/dt = 20 V/μs, gate 0 V 100
Ω,
t
p
= 500 μs
VALUES
1000
1.0
µs
100
UNITS
A/µs
BLOCKING
PARAMETER
Maximum critical rate of rise of
off-state voltage
Maximum peak reverse and
off-state leakage current
SYMBOL
dV/dt
I
RRM
,
I
DRM
TEST CONDITIONS
T
J
= T
J
maximum linear to 80 % rated V
DRM
T
J
= T
J
maximum, rated V
DRM
/V
RRM
applied
VALUES
500
100
UNITS
V/µs
mA
Revision: 20-Dec-13
Document Number: 94411
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-ST380CH Series
www.vishay.com
Vishay Semiconductors
TRIGGERING
PARAMETER
Maximum peak gate power
Maximum average gate power
Maximum peak positive gate current
Maximum peak positive gate voltage
Maximum peak negative gate voltage
SYMBOL
P
GM
P
G(AV)
I
GM
+ V
GM
- V
GM
TEST CONDITIONS
T
J
= T
J
maximum, t
p
≤
5 ms
T
J
= T
J
maximum, f = 50 Hz, d% = 50
T
J
= T
J
maximum, t
p
≤
5 ms
T
J
= T
J
maximum, t
p
≤
5 ms
T
J
= -40 °C
DC gate current required to trigger
I
GT
T
J
= 25 °C
T
J
= 150 °C
T
J
= -40 °C
DC gate voltage required to trigger
V
GT
T
J
= 25 °C
T
J
= 150 °C
DC gate current not to trigger
I
GD
T
J
= T
J
maximum
DC gate voltage not to trigger
V
GD
Maximum gate current/voltage
not to trigger is the maximum
value which will not trigger any
unit with rated V
DRM
anode to
cathode applied
Maximum required gate trigger/
current/voltage are the lowest
value which will trigger all units
12 V anode to cathode applied
200
100
40
2.5
1.8
1.0
10
VALUES
TYP.
MAX.
UNITS
10.0
2.0
3.0
20
5.0
-
200
-
-
3.0
-
W
A
V
mA
V
mA
0.25
V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Maximum operating junction temperature range
Maximum storage temperature range
Maximum thermal resistance, junction to heatsink
SYMBOL
T
J
T
Stg
R
thJ-hs
DC operation single side cooled
DC operation double side cooled
DC operation single side cooled
DC operation double side cooled
TEST CONDITIONS
VALUES
-40 to 150
0.09
0.04
0.02
0.01
9800
(1000)
83
See dimensions - link at the end of datasheet
N
(kg)
g
K/W
UNITS
°C
Maximum thermal resistance, case to heatsink
Mounting force, ± 10 %
Approximate weight
Case style
R
thC-hs
TO-200AB (E-PUK)
ΔR
thJ-hs
CONDUCTION
CONDUCTION ANGLE
180°
120°
90°
60°
30°
SINUSOIDAL CONDUCTION
SINGLE SIDE DOUBLE SIDE
0.010
0.012
0.015
0.022
0.036
0.011
0.012
0.015
0.022
0.036
RECTANGULAR CONDUCTION
SINGLE SIDE
0.007
0.012
0.016
0.023
0.036
DOUBLE SIDE
0.007
0.013
0.017
0.023
0.037
T
J
= T
J
maximum
K/W
TEST CONDITIONS
UNITS
Note
• The table above shows the increment of thermal resistance R
thJ-hs
when devices operate at different conduction angles than DC
Revision: 20-Dec-13
Document Number: 94411
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-ST380CH Series
www.vishay.com
Vishay Semiconductors
Maximum Allowable Heatsink T
emperature (°C)
150
140
130
120
110
100
90
80
70
60
50
40
30
20
0
500
1000
1500
2000
2500
Average On-state Current (A)
Conduc tion Period
Maximum Allowable Heatsink T
emperature (°C)
150
140
130
120
110
100
90
80
70
60
50
40
0
S 380CH..C S
T
eries
(S
ingle S Cooled)
ide
R
thJ-hs
(DC) = 0.09 K/ W
S 380CH..C S
T
eries
(Double S Cooled)
ide
R
thJ-hs
(DC) = 0.04 K/ W
Conduc tion Angle
30°
60°
90°
120°
180°
30°
60°
90°
120°
180°
DC
100 200 300 400 500 600 700 800
Average On-s
tate Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 4 - Current Ratings Characteristics
Maximum Allowable Heatsink T
emperature (°C)
140
130
120
110
100
90
80
70
60
50
40
30
20
0
200
400
30°
S 380CH..C S
T
eries
(S
ingle S
ide Cooled)
R
thJ-hs
(DC) = 0.09 K/ W
Maximum Average On-state Power Loss (W)
150
2500
180°
120°
90°
60°
30°
2000
RMS Limit
1500
Conduc tion Period
1000
Conduction Angle
60°
90°
120°
600
500
180°
DC
S 380CH..C S
T
eries
T = 150°C
J
0
400
800
1200
1600
0
Average On-state Current (A)
800 1000 1200 1400
Average On-state Current (A)
Fig. 2 - Current Ratings Characteristics
Fig. 5 - On-State Power Loss Characteristics
Maximum Allowable Heatsink Temperature (°C)
150
140
130
120
110
100
90
80
70
60
50
40
30
20
0
400
30°
Maximum Average On-s
tate P
ower Loss (W)
S 380CH..C S
T
eries
(Double S Cooled)
ide
R
thJ-hs
(DC) = 0.04 K/ W
3500
3000
2500
2000
RMS Limit
1500
Conduc tion Period
DC
180°
120°
90°
60°
30°
Conduction Angle
60°
90°
120°
180°
1000
500
0
0
500
1000
1500
2000
2500
Average On-state Current (A)
S 380CH..C S
T
eries
T
J
= 150°C
800
1200
1600
Average On-state Current (A)
Fig. 3 - Current Ratings Characteristics
Fig. 6 - On-State Power Loss Characteristics
Revision: 20-Dec-13
Document Number: 94411
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-ST380CH Series
www.vishay.com
Vishay Semiconductors
Peak Half S Wave On-state Current (A)
ine
13000
Maximum Non Repetitive S
urge Current
Versus Puls T
e rain Duration. Control
12000
Of Conduc tion May Not Be Maintained.
Initial T = 150°C
J
11000
No Voltage Reapplied
Rated V
RRM
Reapplied
10000
9000
8000
7000
6000
S 380CH..C S
T
eries
Peak Half Sine Wave On-s
tate Current (A)
12000
11000
10000
9000
8000
7000
6000
5000
1
At Any R
ated Load Condition And With
Rated V
RRM
Applied Following S
urge.
Initial T = 150°C
J
@60 Hz 0.0083 s
@50 Hz 0.0100 s
S 380CH..C S
T
eries
10
100
5000
0.01
0.1
Puls T
e rain Duration (s)
1
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Fig. 7 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Fig. 8 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
10000
Instantaneous On-state Current (A)
T = 25°C
J
T = 150°C
J
1000
S 380CH..C S
T
eries
100
0.5
1
1.5
2
2.5
3
3.5
Instantaneous On-state Voltage (V)
Fig. 9 - On-State Voltage Drop Characteristics
T
ransient T
hermal Impedanc e Z
thJ-hs
(K/W)
0.1
S 380CH..C S
T
eries
0.01
S
teady S
tate Value
R
thJ-hs
= 0.09 K/ W
(S
ingle S
ide Cooled)
R
thJ-hs
= 0.04 K/ W
(Double S
ide Cooled)
(DC Operation)
0.001
0.001
0.01
0.1
S
quare Wave Pulse Duration (s)
1
10
Fig. 10 - Thermal Impedance Z
thJ-hs
Characteristics
Revision: 20-Dec-13
Document Number: 94411
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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