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MFM8516JI-90

Description
Flash, 512KX8, 90ns, CQCC32, CERAMIC, JLCC-32
Categorystorage    storage   
File Size237KB,25 Pages
ManufacturerMOSA
Websitehttp://www.mosanalog.com
Download Datasheet Parametric View All

MFM8516JI-90 Overview

Flash, 512KX8, 90ns, CQCC32, CERAMIC, JLCC-32

MFM8516JI-90 Parametric

Parameter NameAttribute value
MakerMOSA
Parts packaging codeQFJ
package instructionCERAMIC, JLCC-32
Contacts32
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum access time90 ns
JESD-30 codeR-CQCC-J32
memory density4194304 bit
Memory IC TypeFLASH
memory width8
Number of functions1
Number of terminals32
word count524288 words
character code512000
Operating modeASYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize512KX8
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeRECTANGULAR
Package formCHIP CARRIER
Parallel/SerialPARALLEL
Programming voltage5 V
Certification statusNot Qualified
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal formJ BEND
Terminal locationQUAD
typeNOR TYPE
512K x 8 FLASH
MFM8516 - 70/90/12/15
11403 West Bernado Court, Suite 100, San Diego, CA 92127.
Tel No: (619) 674 2233, Fax No: (619) 674 2230
Issue 4.7 : November 1998
Description
The MFM8516 is a 4M Bit CMOS 5V only Flash
monolithic device organised : 512K x 8. The device
offers fast access times of 70/90/120 and 150ns and
5V program/erase.
The device has a 64 KByte sector size. The Program
and Erase procedure is simplified via automatic
program and erase algorithms.
The MFM8516 has a 10K cycle write erase cycle
endurance (100K cycle E-Part) and a 10 year data
retention time.
524,288 bit FLASH EEPROM
Features
4 Megabit FLASH memory.
Fast Access Times of 70/90/120/150 ns.
Operating Power 247.50 mW (max),
Low Power Standby (CMOS) 632.50µW (max).
Automatic Write/Erase by Embedded Algorithm - end of
Write/Erase indicated by DATA Polling and Toggle Bit.
Flexible Sector Erase Architecture - 64K byte sector
size, with hardware protection of any number of sectors.
Byte Program of 16µs (Typ), Sector Program of 2s (Typ)
Erase/Write Cycle Endurance, Standard 10,000 (min)
Extended 100,000 (min)
• 10 year data retention.
May be screened in accordance with MIL-STD-883.
Block Diagram
DQ0-DQ7
Vcc
Vss
Erase Voltage
Generator
Input/Output
Buffers
Pin Definitions
A18
A16
A15
A12
A7
A6
A5
A4
A3
A2
A1
A0
D0
D1
D2
GND
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
V
CC
WE
A17
A14
A13
A8
A9
A11
OE
A10
CS
D7
D6
D5
D4
D3
WE
State
Control
Command
Register
PGM Voltage
Generator
S,V
PACKAGE
TOP VIEW
CE
OE
Chip Enable
Output Enable
Logic
Data
Latch
STB
Vcc Detector
Timer
A
d
d
r
L
a
t
c
h
Y-Decoder
Y-Gating
X-Decoder
Cell Matrix
A7
A6
A5
A4
A3
A2
A1
A0
D0
5
6
7
8
9
10
11
12
13
20
19
18
17
16
15
14
29
28
27
26
25
24
23
22
21
A14
A13
A8
A9
A11
OE
A10
CS
D7
A0-A18
Package Details
Pin Count
32
32
32
32
Description
Package Type
S
J
W
V
Pin Functions
A0-A18
D0-D7
CS
WE
OE
Vcc
GND
Address Inputs
Data Inputs/Outputs
Chip Enable
Write Enable
Output Enable
Power (+5V)
Ground
Dual In-line
JLCC (J Leaded Chip Carrier)
LCC (Leadless Chip Carrier)
Vertical-in-Line
4
3
2
1
32
31
30
D6
D5
D4
D3
GND
D2
D1
A12
A15
A16
A18
Vcc
WE
A17
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