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2N2312

Description
Small Signal Bipolar Transistor, 0.5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-46, TO-46, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size329KB,4 Pages
ManufacturerSemitronics Corp.
Download Datasheet Parametric View All

2N2312 Overview

Small Signal Bipolar Transistor, 0.5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-46, TO-46, 3 PIN

2N2312 Parametric

Parameter NameAttribute value
Parts packaging codeTO-46
package instructionTO-46, 3 PIN
Contacts3
Reach Compliance Codeunknow
Maximum collector current (IC)0.5 A
Collector-emitter maximum voltage60 V
ConfigurationSINGLE
Minimum DC current gain (hFE)30
JEDEC-95 codeTO-46
JESD-30 codeO-MBCY-W3
Number of components1
Number of terminals3
Maximum operating temperature175 °C
Package body materialMETAL
Package shapeROUND
Package formCYLINDRICAL
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.35 W
Certification statusNot Qualified
surface mountNO
Terminal formWIRE
Terminal locationBOTTOM
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)40 MHz
Base Number Matches1

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