MCC
Features
•
•
•
•
•
omponents
21201 Itasca Street Chatsworth
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$
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TSMBJ1006C
THRU
TSMBJ1024C
Transient Voltage
Protection Device
75 to 320 Volts
DO-214AA
(SMBJ)
H
Oxide-Glass passivated Junction
Bi-Directional protection in a single device
Surge capabilities up to 100A@10/1000us or 400A@8/20us
High Off-State impedance and Low On-State voltage
Plastic material has UL flammability classification 94V -0
Mechanical Data
•
•
•
Case : Molded plastic
Polarity : None cathode band denotes
Approx Weight : 0.093grams
Cathode Band
J
Maximum Rating
Characteristic
Non-repetitive peak
impulse current
Non-repetitive peak
On-state current
Operating temperature
range
Junction and storage
temperature range
Symbol
I
PP
I
TSM
T
OP
T
J
, T
STG
Value
100A
50A
-40~150
o
C
-55~150 C
o
DIM
A
B
C
D
E
F
G
H
J
Unit
10/1000us
8.3ms, one-half
cycle
E
F
G
A
C
D
B
DIMENSIONS
INCHES
MIN
.078
.077
.002
---
.030
.065
.205
.160
.130
MM
MIN
2.00
1.96
.05
---
.76
1.65
5.21
4.06
3.30
Thermal Resistance
Characteristic
Thermal Resistance
junction to lead
Thermal Resistance
junction to ambient
Typical positive
temperature
coefficient for
breakdown voltage
Symbol
R
q
JL
R
q
JA
MAX
.096
.083
.008
.02
.060
.091
.220
.180
.155
MAX
2.44
2.10
.20
.51
1.52
2.32
5.59
4.57
3.94
NOTE
Value
20 C/W
100
o
C/W
0.1%/ C
o
o
Unit
On recommended
pad layout
SUGGESTED SOLDER
PAD LAYOUT
0.090"
0.085”
△
V
BR
/
△
T
J
0.070”
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TSMBJ1006C thru TSMBJ1024C
ELECTRICAL CHARACTERISTIC
@25
℃
Unless otherwise specified
Parameter
On-State
Rated
Off-state
Breakover
Voltage Breakover Current
Repetitive Off-
Leakage
Voltage
@I
T
=1.0A
state Voltage Curr ent@V
DRM
MCC
Holding Current
Off-State
Capacitance
C
J
pF
Typ.
200
120
120
120
80
80
80
80
Symbol
Units
Limit
TSMBJ1006C
TSMBJ1007C
TSMBJ1010C
TSMBJ1012C
TSMBJ1016C
TSMBJ1018C
TSMBJ1022C
TSMBJ1024C
V
DRM
Volts
Max
75
90
140
160
190
220
275
320
I
DRM
uA
Max
5
5
5
5
5
5
5
5
V
BO
Volts
Max
98
130
180
220
265
300
350
400
V
T
Volts
Max
5
5
5
5
5
5
5
5
I
BO-
mA
Min
50
50
50
50
50
50
50
50
I
BO+
mA
Max
800
800
800
800
800
800
800
800
I
H-
mA
Min
150
150
150
150
150
150
150
150
I
H+
mA
Max
800
800
800
800
800
800
800
800
MAXIMUM RATED SURGE WAVEFORM
Waveform
Standard
Ipp (A)
2/10 us
8/20 us
10/160 us
10/700 us
10/560 us
10/1000 us
GR-1089-CORE
IEC 61000-4-5
FCC Part 68
ITU-T K20/21
FCC Part 68
GR-1089-CORE
500
400
200
200
150
100
Ipp ; PEAK PULSE CURRENT (%)
100
Peak value (Ipp)
tr = rise time to peak value
tp = decay time to half value
50
Half value
0
tr
tp
TIME
Symbol
V
DRM
I
DRM
V
BR
I
BR
V
BO
I
BO
I
H
V
T
I
PP
C
O
NOTE
：
Parameter
Stand-off voltage
Leakage current at stand-off voltage
Breakdown voltage
Breakdown current
Breakover voltage
Breakover current
Holding current
On state voltage
Peak pulse current
Off-state capacitance
NOTE: 2
NOTE: 1
I
BR
I
BO
I
H
I
DRM
I
PP
I
V
T
V
BR
V
DRM
V
BO
V
1. I H > ( V L/ R L
)
If this criterion is not obeyed, the TSPD triggers but does not return correctly to high-resistance state.
The surge recovery time. It does not exceed 30ms.
2. Off-state capacitance measured at f=1.0MHz , 1.0Vrms signal , VR=2Vdc bias.
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TSMBJ1006C thru TSMBJ1024C
Fig.1 - Off-State Current v.s Junction Temperature
100
1.2
MCC
Fig.2 - Relative Variation of
Breakdown Voltage v.s Junction Temperature
I(DRM) , OFF-STATE CURRENT(uA)
10
NORMALISED BREAKDOWN VOLTAGE
V
BR
(T
J
)
1.15
V
BR
(T
J
=25
℃
)
1
1.1
V
DRM
= 50V
0.1
1.05
1
0.01
0.95
0.001
-25
0
25
50
75
100
125
150
0.9
-50
-25
0
25
50
75
100
125
150
175
Tj , JUNCTION TEMPERATURE (
℃
)
Tj ; JUNCTION TEMPERATURE (
℃
)
Fig.3 - Relative Variation of
Breakover Voltage v.s Junction Temperature
100
1.1
Fig.4 - On-State Current v.s On-State Voltage
NORMALISED BREAKOVER VOLTAGE
V
BO
(T
J
)
1.05
V
BO
(T
J
=25
℃
)
I(T) ; ON-STATE CURRENT (A)
10
1
T
J
= 25
℃
0.95
-50
-25
0
25
50
75
100
125
150
175
1
1
2
3
4
5
6
7
8
9
Tj ; JUNCTION TEMPERATURE (
℃
)
V(T) ; ON-STATE VOLTAGE
Fig.5 - Relative Variation of
Holding Current v.s Junction Temperature
2
1
Fig.6 - Relative Variation of
Junction Capacitance v.s Reverse Voltage Bias
NORMALISED HOLDING CURRENT
1.5
1
NORMALISED CAPACITANCE
C
O
(VR)
C
O
(VR = 1V)
Tj =25
℃
f=1MHz
V
RMS
= 1V
0.5
I
H
(T
J
)
I
H
(T
J
=25
℃
)
0
-50
-25
0
25
50
75
100
125
0.1
1
10
100
Tj ; JUNCTION TEMPERATURE (
℃
)
VR ; REVERSE VOLTAGE (V)
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TSMBJ1006C thru TSMBJ1024C
TYPICAL APPLICATION CIRCUITS
MCC
FUSE
RING
TELECOM
EQUIPMENT
E.G. MODEM
TIP
TSPD 1
RING
PTC
TSPD 1
TELECOM
EQUIPMENT
E.G. ISDN
TSPD 2
TIP
PTC
RING
PTC
TSPD 2
TSPD 1
TSPD 3
TELECOM
EQUIPMENT
E.G. LINE CARD
TIP
PTC
The PTC (Positive Temperature Coefficient) is an overcurrent protection device.
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