BAT760
Medium power Schottky barrier single diode
Rev. 03 — 17 October 2008
Product data sheet
1. Product profile
1.1 General description
Planar medium power Schottky barrier single diode with an integrated guard ring for
stress protection, encapsulated in a SOD323 (SC-76) very small Surface-Mounted
Device SMD plastic package.
1.2 Features
I
I
I
I
Ultra high-speed switching
Very low forward voltage
Guard-ring protected
Very small SMD plastic package
1.3 Applications
I
Ultra high-speed switching
I
Voltage clamping
I
Protection circuits
1.4 Quick reference data
Table 1.
Symbol
V
R
I
F
V
F
[1]
Quick reference data
Parameter
reverse voltage
forward current
forward voltage
I
F
= 1 A
[1]
Conditions
Min
-
-
-
Typ
-
-
480
Max
20
1
550
Unit
V
A
mV
Pulse test: t
p
≤
300
µs; δ ≤
0.02.
NXP Semiconductors
BAT760
Medium power Schottky barrier single diode
2. Pinning information
Table 2.
Pin
1
2
Pinning
Description
cathode
anode
[1]
Simplified outline
1
2
Graphic symbol
1
2
sym001
[1]
The marking bar indicates the cathode.
3. Ordering information
Table 3.
Ordering information
Package
Name
BAT760
SC-76
Description
plastic surface-mounted package; 2 leads
Version
SOD323
Type number
4. Marking
Table 4.
BAT760
Marking codes
Marking code
A4
Type number
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
R
I
F
I
FSM
Parameter
reverse voltage
forward current
non-repetitive peak
forward current
junction temperature
ambient temperature
storage temperature
t
p
= 8.3 ms;
half-sine wave;
JEDEC method
Conditions
Min
-
-
-
Max
20
1
5
Unit
V
A
A
T
j
T
amb
T
stg
-
−65
−65
125
+125
+150
°C
°C
°C
BAT760_3
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 03 — 17 October 2008
2 of 9
NXP Semiconductors
BAT760
Medium power Schottky barrier single diode
6. Thermal characteristics
Table 6.
Symbol
R
th(j-a)
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
Conditions
in free air
[1]
[2]
Min
-
-
Typ
-
-
Max
220
180
Unit
K/W
K/W
[1]
[2]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
cathode 10
×
10 mm
2
.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 40
×
40 mm
2
.
7. Characteristics
Table 7.
Characteristics
T
amb
= 25
°
C unless otherwise specified.
Symbol
V
F
Parameter
forward voltage
I
F
= 10 mA
I
F
= 100 mA
I
F
= 1 A
I
R
reverse current
V
R
= 5 V
V
R
= 8 V
V
R
= 15 V
C
d
[1]
[1]
Conditions
[1]
Min
-
-
-
-
-
-
-
Typ
240
300
480
5
7
10
19
Max
270
350
550
10
20
50
25
Unit
mV
mV
mV
µA
µA
µA
pF
diode capacitance
Pulse test: t
p
≤
300
µs; δ ≤
0.02.
V
R
= 5 V; f = 1 MHz
BAT760_3
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 03 — 17 October 2008
3 of 9
NXP Semiconductors
BAT760
Medium power Schottky barrier single diode
10
3
I
F
(mA)
10
2
mld562
10
5
I
R
(µA)
10
4
(1)
mld563
10
3
(1)
(2)
(3)
(2)
10
10
2
1
10
(3)
10
−1
0
0.2
0.4
V
F
(V)
0.6
1
0
5
10
15
20
V
R
(V)
25
(1) T
amb
= 125
°C
(2) T
amb
= 85
°C
(3) T
amb
= 25
°C
(1) T
amb
= 125
°C
(2) T
amb
= 85
°C
(3) T
amb
= 25
°C
Fig 1.
Forward current as a function of forward
voltage; typical values
Fig 2.
Reverse current as a function of reverse
voltage; typical values
mld564
80
C
d
(pF)
60
40
20
0
0
5
10
15
V
R
(V)
20
f = 1 MHz; T
amb
= 25
°C
Fig 3.
Diode capacitance as a function of reverse voltage; typical values
BAT760_3
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 03 — 17 October 2008
4 of 9
NXP Semiconductors
BAT760
Medium power Schottky barrier single diode
8. Package outline
1.35
1.15
1
0.45
0.15
1.1
0.8
2.7
2.3
1.8
1.6
2
0.40
0.25
Dimensions in mm
0.25
0.10
03-12-17
Fig 4.
Package outline SOD323 (SC-76)
9. Packing information
Table 8.
Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.
[1]
Type number
BAT760
[1]
Package
SOD323
Description
4 mm pitch, 8 mm tape and reel
Packing quantity
3000
-115
10000
-135
For further information and the availability of packing methods, see
Section 13.
BAT760_3
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 03 — 17 October 2008
5 of 9
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