MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
General Purpose Transistors
PNP Silicon
2N4402
2N4403*
*Motorola Preferred Device
COLLECTOR
3
2
BASE
1
EMITTER
1
2
3
MAXIMUM RATINGS
Rating
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol
VCEO
VCBO
VEBO
IC
PD
PD
TJ, Tstg
Value
40
40
5.0
600
625
5.0
1.5
12
– 55 to +150
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
Watt
mW/°C
°C
CASE 29–04, STYLE 1
TO–92 (TO–226AA)
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Symbol
R
q
JA
R
q
JC
Max
200
83.3
Unit
°C/W
°C/W
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(1)
(IC = 1.0 mAdc, IB = 0)
Collector – Base Breakdown Voltage
(IC = 0.1 mAdc, IE = 0)
Emitter – Base Breakdown Voltage
(IE = 0.1 mAdc, IC = 0)
Base Cutoff Current
(VCE = 35 Vdc, VEB = 0.4 Vdc)
Collector Cutoff Current
(VCE = 35 Vdc, VEB = 0.4 Vdc)
1. Pulse Test: Pulse Width
≤
300
m
s, Duty Cycle
≤
2.0%.
V(BR)CEO
V(BR)CBO
V(BR)EBO
IBEV
ICEX
40
40
5.0
—
—
—
—
—
0.1
0.1
Vdc
Vdc
Vdc
µAdc
µAdc
Preferred
devices are Motorola recommended choices for future use and best overall value.
2–32
Motorola Small–Signal Transistors, FETs and Diodes Device Data
2N4402 2N4403
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
Unit
ON CHARACTERISTICS
DC Current Gain
(IC = 0.1 mAdc, VCE = 1.0 Vdc)
(IC = 1.0 mAdc, VCE = 1.0 Vdc)
hFE
2N4403
2N4402
2N4403
2N4402
2N4403
2N4402
2N4403
Both
VCE(sat)
—
—
VBE(sat)
0.75
—
0.95
1.3
0.4
0.75
Vdc
30
30
60
50
100
50
100
20
—
—
—
—
—
150
300
—
Vdc
—
(IC = 10 mAdc, VCE = 1.0 Vdc)
(IC = 150 mAdc, VCE = 2.0 Vdc)(1)
(IC = 500 mAdc, VCE = 2.0 Vdc)(1)
Collector – Emitter Saturation Voltage(1)
(IC = 150 mAdc, IB = 15 mAdc)
(IC = 500 mAdc, IB = 50 mAdc)
Base – Emitter Saturation Voltage(1)
(IC = 150 mAdc, IB = 15 mAdc)
(IC = 500 mAdc, IB = 50 mAdc)
SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product
(IC = 20 mAdc, VCE = 10 Vdc, f = 100 MHz)
Collector–Base Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Emitter–Base Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Input Impedance
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
Voltage Feedback Ratio (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
Small–Signal Current Gain
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
Output Admittance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
2N4402
2N4403
hoe
2N4402
2N4403
hre
hfe
30
60
1.0
250
500
100
µmhos
fT
2N4402
2N4403
Ccb
Ceb
hie
750
1.5 k
0.1
7.5 k
15 k
8.0
X 10–4
—
150
200
—
—
—
—
8.5
30
pF
pF
ohms
MHz
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
(
(VCC = 30 Vdc, VBE = + 2.0 Vdc,
IC = 150 mAdc, IB1 = 15 mAdc)
(
(VCC = 30 Vdc, IC = 150 mAdc,
IB1 = 15 mA, IB2 = 15 mA)
td
tr
ts
tf
—
—
—
—
15
20
225
30
ns
ns
ns
ns
1. Pulse Test: Pulse Width
≤
300
m
s, Duty Cycle
≤
2.0%.
SWITCHING TIME EQUIVALENT TEST CIRCUIT
– 30 V
< 2 ns
+2 V
0
1.0 kΩ
– 16 V
10 to 100
µs,
DUTY CYCLE = 2%
CS* < 10 pF
200
Ω
+14 V
0
1.0 kΩ
–16 V
1.0 to 100
µs,
DUTY CYCLE = 2%
CS* < 10 pF
< 20 ns
– 30 V
200
Ω
+ 4.0 V
Scope rise time < 4.0 ns
*Total shunt capacitance of test jig connectors, and oscilloscope
Figure 1. Turn–On Time
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Figure 2. Turn–Off Time
2–33
2N4402 2N4403
TRANSIENT CHARACTERISTICS
25°C
30
20
CAPACITANCE (pF)
100°C
10
7.0
5.0
Ceb
3.0
Q, CHARGE (nC)
2.0
1.0
0.7
0.5
0.3
0.2
2.0
0.1
0.1
0.2 0.3
2.0 3.0 5.0 7.0 10
0.5 0.7 1.0
REVERSE VOLTAGE (VOLTS)
20
30
10
20
200
30
50 70 100
IC, COLLECTOR CURRENT (mA)
300
500
10
7.0
5.0
Ccb
VCC = 30 V
IC/IB = 10
QT
QA
Figure 3. Capacitances
Figure 4. Charge Data
100
70
50
t, TIME (ns)
30
20
t r , RISE TIME (ns)
tr @ VCC = 30 V
tr @ VCC = 10 V
td @ VBE(off) = 2 V
td @ VBE(off) = 0
IC/IB = 10
100
70
50
30
20
VCC = 30 V
IC/IB = 10
10
7.0
5.0
10
20
30
50
70
100
200
300
500
IC, COLLECTOR CURRENT (mA)
10
7.0
5.0
10
20
30
50
70
100
200
300
500
IC, COLLECTOR CURRENT (mA)
Figure 5. Turn–On Time
Figure 6. Rise Time
200
IC/IB = 10
t s
′
, STORAGE TIME (ns)
100
70
50
IB1 = IB2
ts
′
= ts – 1/8 tf
30
20
IC/IB = 20
10
20
30
50
70
100
200
300
500
IC, COLLECTOR CURRENT (mA)
Figure 7. Storage Time
2–34
Motorola Small–Signal Transistors, FETs and Diodes Device Data
2N4402 2N4403
SMALL–SIGNAL CHARACTERISTICS
NOISE FIGURE
VCE = –10 Vdc, TA = 25°C
Bandwidth = 1.0 Hz
10
10
f = 1 kHz
8
NF, NOISE FIGURE (dB)
IC = 1.0 mA, RS = 430
Ω
IC = 500
µA,
RS = 560
Ω
IC = 50
µA,
RS = 2.7 kΩ
IC = 100
µA,
RS = 1.6 kΩ
NF, NOISE FIGURE (dB)
8
6
6
4
4
IC = 50
µA
100
µA
500
µA
1.0 mA
2
RS = OPTIMUM SOURCE RESISTANCE
2
0
0.01 0.02 0.05 0.1 0.2
0
0.5 1.0 2.0 5.0
10
20
50
100
50
100
200
500
1k
2k
5k
10 k 20 k
50 k
RS, SOURCE RESISTANCE (OHMS)
f, FREQUENCY (kHz)
Figure 8. Frequency Effects
Figure 9. Source Resistance Effects
h PARAMETERS
VCE = –10 Vdc, f = 1.0 kHz, TA = 25°C
This group of graphs illustrates the relationship between
selected from both the 2N4402 and 2N4403 lines, and the
hfe and other “h” parameters for this series of transistors. To
same units were used to develop the correspondingly–
obtain these curves, a high–gain and a low–gain unit were
numbered curves on each graph.
1000
700
500
hfe , CURRENT GAIN
300
200
2N4403 UNIT 1
2N4403 UNIT 2
2N4402 UNIT 1
2N4402 UNIT 2
hie , INPUT IMPEDANCE (OHMS)
100 k
50 k
20 k
10 k
5k
2k
1k
500
200
30
0.1
0.2
0.3
0.5 0.7 1.0
2.0
3.0
5.0 7.0 10
100
0.1
0.2
0.3
0.5 0.7 1.0
2.0
3.0
5.0 7.0
10
2N4403 UNIT 1
2N4403 UNIT 2
2N4402 UNIT 1
2N4402 UNIT 2
100
70
50
IC, COLLECTOR CURRENT (mAdc)
IC, COLLECTOR CURRENT (mAdc)
Figure 10. Current Gain
20
h re , VOLTAGE FEEDBACK RATIO (X 10
–4
)
10
5.0
2.0
1.0
0.5
0.2
0.1
0.1
0.2
0.3
0.5 0.7 1.0
2.0
3.0
5.0 7.0 10
2N4403 UNIT 1
2N4403 UNIT 2
2N4402 UNIT 1
2N4402 UNIT 2
hoe, OUTPUT ADMITTANCE (
m
mhos)
500
Figure 11. Input Impedance
100
50
20
10
5.0
2.0
1.0
0.1
0.2
0.3
0.5 0.7 1.0
2.0
2N4403 UNIT 1
2N4403 UNIT 2
2N4402 UNIT 1
2N4402 UNIT 2
3.0
5.0 7.0 10
IC, COLLECTOR CURRENT (mAdc)
IC, COLLECTOR CURRENT (mAdc)
Figure 12. Voltage Feedback Ratio
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Figure 13. Output Admittance
2–35
2N4402 2N4403
STATIC CHARACTERISTICS
3.0
h FE, NORMALIZED CURRENT GAIN
2.0
VCE = 1.0 V
VCE = 10 V
TJ = 125°C
25°C
1.0
0.7
0.5
0.3
0.2
0.1
– 55°C
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0 7.0 10
20
IC, COLLECTOR CURRENT (mA)
30
50
70
100
200
300
500
Figure 14. DC Current Gain
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
1.0
0.8
0.6
IC = 1.0 mA
0.4
10 mA
100 mA
500 mA
0.2
0
0.005
0.01
0.02
0.03
0.05 0.07 0.1
0.2
0.3
0.5 0.7 1.0
IB, BASE CURRENT (mA)
2.0
3.0
5.0
7.0
10
20
30
50
Figure 15. Collector Saturation Region
1.0
0.8
VOLTAGE (VOLTS)
TJ = 25°C
VBE(sat) @ IC/IB = 10
COEFFICIENT (mV/
°
C)
0.5
0
0.5
1.0
1.5
2.0
VCE(sat) @ IC/IB = 10
2.5
0.1 0.2
q
VC for VCE(sat)
0.6
VBE(sat) @ VCE = 10 V
0.4
0.2
q
VS for VBE
0.5
50 100 200
1.0 2.0 5.0 10 20
IC, COLLECTOR CURRENT (mA)
500
0
0.1 0.2
0.5
50 100 200
1.0 2.0
5.0 10 20
IC, COLLECTOR CURRENT (mA)
500
Figure 16. “On” Voltages
Figure 17. Temperature Coefficients
2–36
Motorola Small–Signal Transistors, FETs and Diodes Device Data
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