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2SK1820-01L

Description
Power Field-Effect Transistor, 6A I(D), 500V, 1.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TPACK-3
CategoryDiscrete semiconductor    The transistor   
File Size89KB,2 Pages
ManufacturerFuji Electric Co., Ltd.
Download Datasheet Parametric Compare View All

2SK1820-01L Overview

Power Field-Effect Transistor, 6A I(D), 500V, 1.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TPACK-3

2SK1820-01L Parametric

Parameter NameAttribute value
package instructionIN-LINE, R-PSIP-T3
Reach Compliance Codeunknow
Other featuresAVALANCHE RATED
ConfigurationSINGLE
Minimum drain-source breakdown voltage500 V
Maximum drain current (ID)6 A
Maximum drain-source on-resistance1.6 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PSIP-T3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Polarity/channel typeN-CHANNEL
Maximum power consumption environment80 W
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Transistor component materialsSILICON
Maximum off time (toff)200 ns
Maximum opening time (tons)110 ns
Base Number Matches1

2SK1820-01L Related Products

2SK1820-01L 2SK1820-01S
Description Power Field-Effect Transistor, 6A I(D), 500V, 1.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TPACK-3 Power Field-Effect Transistor, 6A I(D), 500V, 1.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
package instruction IN-LINE, R-PSIP-T3 SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code unknow unknow
Configuration SINGLE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 500 V 500 V
Maximum drain current (ID) 6 A 6 A
Maximum drain-source on-resistance 1.6 Ω 1.6 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 code R-PSIP-T3 R-PSSO-G2
Number of components 1 1
Number of terminals 3 2
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form IN-LINE SMALL OUTLINE
Polarity/channel type N-CHANNEL N-CHANNEL
Certification status Not Qualified Not Qualified
surface mount NO YES
Terminal form THROUGH-HOLE GULL WING
Terminal location SINGLE SINGLE
Transistor component materials SILICON SILICON
Base Number Matches 1 1
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