BUL53BSMD
MECHANICAL DATA
Dimensions in mm
ADVANCED DISTRIBUTED
BASE DESIGN
HIGH VOLTAGE, HIGH SPEED NPN
SILICON POWER TRANSISTOR
3 .6 0 (0 .1 4 2 )
M a x .
0 .8 9
(0 .0 3 5 )
m in .
3 .7 0 (0 .1 4 6 )
3 .7 0 (0 .1 4 6 )
3 .4 1 (0 .1 3 4 )
3 .4 1 (0 .1 3 4 )
4 .1 4 (0 .1 6 3 )
3 .8 4 (0 .1 5 1 )
1
3
1 0 .6 9 (0 .4 2 1 )
1 0 .3 9 (0 .4 0 9 )
2
• CERAMIC SURFACE MOUNT PACKAGE
• FULL MIL/AEROSPACE TEMPERATURE
RANGE
• SCREENING OPTIONS FOR MILITARY AND
SPACE APPLICATIONS
• SEMEFAB DESIGNED AND DIFFUSED DIE
• HIGH VOLTAGE (V
CBO
= 800V)
• FAST SWITCHING (t
f
= 100ns)
• HIGH ENERGY RATING
0 .7 6
(0 .0 3 0 )
m in .
1 6 .0 2 (0 .6 3 1 )
1 5 .7 3 (0 .6 1 9 )
9 .6
9 .3
1 1 .5
1 1 .2
7 (0
8 (0
8 (0
8 (0
.3 8
.3 6
.4 5
.4 4
1 )
9 )
6 )
4 )
0 .5 0 (0 .0 2 0 )
0 .2 6 (0 .0 1 0 )
FEATURES
• Multi-Base design for efficient energy
distribution across the chip.
• SIgnificantly improved switching and energy
ratings across full temperature range.
• Ion implant and high accuracy masking for
tight control of characteristics from batch to
batch.
• Triple guard rings for improved control of
high voltages.
SMD1
Pad 1 – Base
Pad 2 – Collector
Pad 3 – Emitter
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
V
CBO
V
CEO
V
EBO
I
C
I
C(PK)
I
B
P
D
R
?
T
j
T
stg
Collector – Base Voltage
Collector – Emitter Voltage (I
B
= 0)
Emitter – Base Voltage (I
C
= 0)
Collector Current
Peak Collector Current
Base Current
Power Dissipation
Thermal Impedance
(when mounted on thermally conducting PCB)
Maximum Junction Temperature
Storage Temperature Range
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
500V
250V
10V
12A
20A
3A
60W
3.0°C/W
200°C
–55 to +200°C
Prelim. 7/00
Semelab plc.
BUL53BSMD
ELECTRICAL CHARACTERISTICS
(Tcase = 25°C unless otherwise stated)
Parameter
V
CEO(sus)*
V
(BR)CBO*
V
(BR)EBO*
I
CEO*
I
CBO*
I
EBO*
Collector - Emitter
sustaining voltage
Collector - Base
breakdown voltage
Emitter - Base
breakdown voltage
Collector cut-off current
Collector - Base cut-off
current
Emitter cut-off current
Collector - Emitter
saturation voltage
Base - Emitter
saturation voltage
Base - Emitter
saturation voltage
DC Current gain
I
C
= 0
I
C
= 100mA
I
C
= 2A
I
C
= 5A
I
C
= 2A
I
C
= 5A
I
C
= 1A
I
C
= 100mA
h
FE*
I
C
= 2A
I
C
= 5A
Test Conditions
I
C
= 100mA
I
C
= 1mA
I
B
= 1mA
I
B
= 0
I
E
= 0
I
C
= 0
V
CE
= 250V
V
CB
= 500V
T
C
= 125°C
V
EB
= 5V
T
C
= 125°C
I
B
= 10mA
I
B
= 200mA
I
B
= 500mA
I
B
= 200mA
I
B
= 500mA
V
CE
= 4V
V
CE
= 4V
V
CE
= 4V
V
CE
= 4V
Min.
250
500
10
Typ.
Max.
Unit
V
V
V
100
10
100
10
100
0.05
0.15
0.3
0.8
0.9
0.8
20
20
20
45
40
0.1
0.3
0.6
1.1
1.2
1.0
m
A
A
A
m
m
V
CE(sat)*
V
V
BE(sat)*
V
BE(on)*
V
V
—
* Pulse test t
p
= 300
m
s ,
d £
2%
DYNAMIC CHARACTERISTICS
(Tcase = 25°C unless otherwise stated)
Parameter
f
T
C
ob
Transition frequency
Output capacitance
Test Conditions
I
C
= 100mA
f = 10MHz
V
CB
= 20V
f = 1.0MHz
I
E
= 0
V
CE
= 4V
Min.
Typ.
20
200
Max.
Unit
MHz
pF
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Prelim. 7/00
Discrete Device
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