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BZM55-A3V0T/R

Description
Zener Diode,
CategoryDiscrete semiconductor    diode   
File Size241KB,3 Pages
ManufacturerCheng-Yi Electronic Co., Ltd.
Download Datasheet Parametric View All

BZM55-A3V0T/R Overview

Zener Diode,

BZM55-A3V0T/R Parametric

Parameter NameAttribute value
MakerCheng-Yi Electronic Co., Ltd.
Reach Compliance Codeunknown
ECCN codeEAR99
BZM55-C2V4 SERIES
PB FREE PRODUCT
SURFACE MOUNT ZENER DIODES
VOLTAGE
2.4 to 47 Volts
POWER
500 mWatts
MICRO-MELF
Unit : inch (mm)
FEATURES
• Planar Die construction
• 500mW Power Dissipation
• Ideally Suited for Automated Assembly Processes
.049(1.25)
.043 (1.1)DIA.
MECHANICAL DATA
• Case: Molded Glass MICRO-MELF
• Terminals: Solderable per MIL-STD-202E, Method 208
• Polarity: See Diagram Below
• Approx. Weight: 0.008 grams
• Mounting Position: Any
• Packing information
T/R - 2.5K per 7" plastic Reel
.043(1.1)
.008(0.2)
.079(2.0)
.071(1.8)
.008(0.2)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Value
500
175
-65 to +175
Units
mW
O
Parameter
Power Dissipation at Tamb = 25
Junction Temperature
Storage Temperature Range
Valid provided that leads at a distance of 8mm from case are kept at ambient temperature.
O
Symbol
C
P
TOT
T
J
T
S
C
C
O
Parameter
Thermal Resi stance Juncti on to Ambi ent Ai r
Forward Voltage at IF = 100mA
Symbol
Min.
--
--
Typ.
Max.
0.3
1
Uni ts
K/mW
V
RthA
VF
--
--
Vali d provi ded that leads at a di stance of 8mm from case are kept at ambi ent temperature.
PAGE . 1
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