BDC01D18 datasheet, PDF - EEWORLD Datasheet

BDC01D18: Description500mA, 100V, NPN, Si, SMALL SIGNAL TRANSISTOR; CategoryDiscrete semiconductor The transistor; File Size25KB，1 Pages; ManufacturerMotorola ( NXP ); Websitehttps://www.nxp.com

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BDC01D18 Overview

500mA, 100V, NPN, Si, SMALL SIGNAL TRANSISTOR

Parameter Name	Attribute value
Maker	Motorola ( NXP )
package instruction	CYLINDRICAL, O-PBCY-T3
Reach Compliance Code	unknown
ECCN code	EAR99
Maximum collector current (IC)	0.5 A
Collector-based maximum capacity	30 pF
Collector-emitter maximum voltage	100 V
Configuration	SINGLE
Minimum DC current gain (hFE)	25
JESD-30 code	O-PBCY-T3
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	CYLINDRICAL
Polarity/channel type	NPN
Maximum power consumption environment	2.5 W
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	BOTTOM
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	50 MHz
VCEsat-Max	0.7 V

	BDC01D18	BDC01D5
Description	500mA, 100V, NPN, Si, SMALL SIGNAL TRANSISTOR	500mA, 100V, NPN, Si, SMALL SIGNAL TRANSISTOR
Maker	Motorola ( NXP )	Motorola ( NXP )
package instruction	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3
Reach Compliance Code	unknown	unknow
ECCN code	EAR99	EAR99
Maximum collector current (IC)	0.5 A	0.5 A
Collector-based maximum capacity	30 pF	30 pF
Collector-emitter maximum voltage	100 V	100 V
Configuration	SINGLE	SINGLE
Minimum DC current gain (hFE)	25	25
JESD-30 code	O-PBCY-T3	O-PBCY-T3
Number of components	1	1
Number of terminals	3	3
Maximum operating temperature	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	ROUND	ROUND
Package form	CYLINDRICAL	CYLINDRICAL
Polarity/channel type	NPN	NPN
Maximum power consumption environment	2.5 W	2.5 W
Certification status	Not Qualified	Not Qualified
surface mount	NO	NO
Terminal form	THROUGH-HOLE	THROUGH-HOLE
Terminal location	BOTTOM	BOTTOM
transistor applications	AMPLIFIER	AMPLIFIER
Transistor component materials	SILICON	SILICON
Nominal transition frequency (fT)	50 MHz	50 MHz
VCEsat-Max	0.7 V	0.7 V

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