GenX3
TM
1200V IGBTs
Ultra-Low Vsat PT IGBTs for
up to 3 kHz Switching
IXGA20N120A3
IXGP20N120A3
IXGH20N120A3
V
CES
= 1200V
I
C110
= 20A
V
CE(sat)
≤
2.5V
TO-263 AA (IXGA)
G
E
C (Tab)
Symbol
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C110
I
CM
SSOA
(RBSOA)
P
C
T
J
T
JM
T
stg
M
d
F
C
T
L
T
SOLD
Weight
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C, R
GE
= 1MΩ
Continuous
Transient
T
C
= 25°C
T
C
= 110°C
T
C
= 25°C, 1ms
V
GE
= 15V, T
J
= 125°C, R
G
= 10Ω
Clamped Inductive Load
T
C
= 25°C
Maximum Ratings
1200
1200
±20
±30
40
20
120
I
CM
= 40
@V
CE
≤
960
180
-55 ... +150
150
-55 ... +150
V
V
V
V
A
A
A
A
V
W
°C
°C
°C
Nm/lb.in.
N/lb.
°C
°C
g
g
g
TO-220AB (IXGP)
G
CE
C (Tab)
TO-247 (IXGH)
G
C
E
C (Tab)
Mounting Torque (TO-247 & TO-220)
Mounting Force (TO-263)
Maximum Lead Temperature for Soldering
1.6mm (0.062 in.) from Case for 10s
TO-263
TO-220
TO-247
1.13/10
10..65 / 2.2..14.6
300
260
2.5
3.0
6.0
G = Gate
E = Emitter
C = Collector
Tab = Collector
Features
Optimized for Low Conduction Losses
International Standard Packages
Advantages
High Power Density
Low Gate Drive Requirement
Applications
Symbol
Test Conditions
(T
J
= 25°C, Unless Otherwise Specified)
BV
CES
V
GE(th)
I
CES
I
GES
V
CE(sat)
I
C
I
C
= 250μA, V
GE
= 0V
= 250μA, V
CE
= V
GE
T
J
= 125°C
V
CE
= 0V, V
GE
=
±20V
I
C
= 20A, V
GE
= 15V, Note 1
T
J
= 125°C
Characteristic Values
Min.
Typ.
Max.
1200
2.5
5.0
25
1
±100
2.3
2.5
2.5
V
V
μA
mA
nA
V
V
V
CE
= V
CES
, V
GE
= 0V
Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
Inrush Current Protection Circuits
© 2009 IXYS CORPORATION, All Rights Reserved
DS100046A(11/09)
IXGA20N120A3 IXGP20N120A3
IXGH20N120A3
Symbol
Test Conditions
(T
J
= 25°C, Unless Otherwise Specified)
g
fs
C
ies
C
oes
C
res
Q
g
Q
ge
Q
gc
t
d(on)
t
ri
E
on
t
d(off)
t
fi
E
off
t
d(on)
t
ri
E
on
t
d(off)
t
fi
E
off
R
thJC
R
thCK
Inductive Load, T
J
= 125°C
°
I
C
= 20A, V
GE
= 15V
V
CE
= 960V, R
G
= 10Ω
Note 2
Inductive Load, T
J
= 25°C
°
I
C
= 20A, V
GE
= 15V
V
CE
= 960V, R
G
= 10Ω
Note 2
I
C
= 20A, V
GE
= 15V, V
CE
= 0.5
•
V
CES
I
C
= 20A, V
CE
= 10V, Note 1
V
CE
= 25V, V
GE
= 0V, f = 1MHz
Characteristic Values
Min.
Typ.
Max.
7
12
1075
80
27
50
7.3
23
16
44
2.85
290
715
6.47
16
50
5.53
310
1220
10.10
0.50
0.21
S
pF
pF
pF
nC
nC
nC
ns
ns
mJ
ns
ns
mJ
ns
ns
mJ
ns
ns
mJ
0.69
°C/W
°C/W
°C/W
TO-220 (IXGP) Outline
TO-247 (IXGH) AD Outline
1 = Gate
2 = Collector
3 = Emitter
Tab = Collector
TO-220
TO-247
Notes:
1. Pulse test, t
≤
300μs, duty cycle, d
≤
2%.
2. Switching times & energy losses may increase for higher V
CE
(Clamp), T
J
or R
G
.
TO-263 (IXGA) Outline
Pins:
1 - Gate
3 - Emitter
2 - Collector
4 - Collector
1 = Gate
2 = Collector
3 = Emitter
Tab = Collector
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2
IXGA20N120A3 IXGP20N120A3
IXGH20N120A3
Fig. 1. Output Characteristics @ T
J
= 25ºC
40
35
30
V
GE
= 15V
13V
11V
140
V
GE
= 15V
120
100
Fig. 2. Extended Output Characteristics @ T
J
= 25ºC
I
C
- Amperes
I
C
-
Amperes
25
9V
20
15
7V
10
5
5V
0
0.0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
3.2
3.6
13V
80
11V
60
40
20
7V
0
0
4
8
12
16
20
24
28
32
9V
V
CE
- Volts
V
CE
- Volts
Fig. 3. Output Characteristics @ T
J
= 125ºC
40
35
30
V
GE
= 15V
13V
11V
1.8
V
GE
= 15V
1.6
Fig. 4. Dependence of V
CE(sat)
on
Junction Temperature
I
C
= 40A
V
CE(sat)
- Normalized
I
C
- Amperes
25
20
15
10
5
0
0.0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
3.2
3.6
4.0
9V
1.4
1.2
I
1.0
C
= 20A
7V
0.8
5V
0.6
-50
-25
0
25
50
75
100
125
150
I
C
= 10A
V
CE
- Volts
T
J
- Degrees Centigrade
Fig. 5. Collector-to-Emitter Voltage
vs. Gate-to-Emitter Voltage
7.5
T
J
= 25ºC
6.5
35
45
40
Fig. 6. Input Admittance
T
J
= - 40ºC
25ºC
125ºC
I
C
-
Amperes
5.5
30
25
20
15
10
5
V
CE
- Volts
4.5
I
C
= 40A
3.5
10A
2.5
20A
1.5
5
6
7
8
9
10
11
12
13
14
15
0
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
9.0
V
GE
- Volts
V
GE
- Volts
© 2009 IXYS CORPORATION, All Rights Reserved
IXGA20N120A3 IXGP20N120A3
IXGH20N120A3
Fig. 7. Transconductance
16
T
J
= - 40ºC
14
12
25ºC
125ºC
14
12
V
CE
= 600V
I
C
= 20A
I
G
= 10 mA
16
Fig. 8. Gate Charge
g
f s
-
Siemens
8
6
4
2
0
0
5
10
15
20
25
30
35
40
45
V
GE
- Volts
10
10
8
6
4
2
0
0
5
10
15
20
25
30
35
40
45
50
I
C
- Amperes
Q
G
- NanoCoulombs
Fig. 9. Capacitance
10,000
45
40
Cies
1,000
35
30
Fig. 10. Reverse-Bias Safe Operating Area
f
= 1MHz
Capacitance - PicoFarads
I
C
- Amperes
25
20
15
10
T
J
= 125ºC
R
G
= 10Ω
dv / dt < 10V / ns
Coes
100
Cres
10
0
5
10
15
20
25
30
35
40
5
0
200
300
400
500
600
700
800
900
1000
1100
1200
V
CE
- Volts
V
CE
- Volts
Fig. 11. Maximum Transient Thermal Impedance
1.00
Z
(th)JC
- ºC / W
0.10
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXGA20N120A3 IXGP20N120A3
IXGH20N120A3
Fig. 12. Inductive Switching Energy Loss
vs. Gate Resistance
26
24
22
E
off
V
CE
= 960V
E
on
-
20
24
22
20
18
E
off
V
CE
= 960V
E
on
Fig. 13. Inductive Switching Energy Loss
vs. Collector Current
12
18
16
---
----
11
10
9
8
T
J
= 125ºC , V
GE
= 15V
R
G
= 10
Ω
,
V
GE
= 15V
E
on
- MilliJoules
E
off
- MilliJoules
E
off
- MilliJoules
20
18
16
14
12
10
8
10
15
20
25
30
35
40
45
50
I
C
= 20A
I
C
14
= 40A
12
10
8
6
4
2
E
on
- MilliJoules
16
14
12
10
8
6
4
20
22
24
26
28
30
32
34
36
38
40
T
J
= 25ºC
T
J
= 125ºC
7
6
5
4
3
2
R
G
- Ohms
I
C
- Amperes
Fig. 14. Inductive Switching Energy Loss
vs. Junction Temperature
22
20
18
16
E
off
V
CE
= 960V
E
on
11
1700
1600
1500
1400
Fig. 15. Inductive Turn-off Switching Times
vs. Gate Resistance
700
10
9
----
R
G
= 10Ω
,
V
GE
= 15V
t
fi
V
CE
= 960V
t
d(off)
- - - -
650
600
550
I
C
T
J
= 125ºC,
V
GE
= 15V
= 20A
t
d(off)
- Nanoseconds
t
f
- Nanoseconds
8
I
C
= 40A
7
6
5
4
I
C
= 20A
3
2
1
125
E
on
- MilliJoules
E
off
- MilliJoules
14
12
10
8
6
4
2
25
35
45
55
65
75
1300
1200
1100
1000
900
800
700
600
10
15
20
25
30
I
C
500
450
400
350
= 40A
300
250
200
150
35
40
45
50
85
95
105
115
T
J
- Degrees Centigrade
R
G
- Ohms
Fig. 16. Inductive Turn-off Switching Times
vs. Collector Current
1400
1300
1200
360
1400
1300
1200
Fig. 17. Inductive Turn-off Switching Times
vs. Junction Temperature
350
350
340
t
fi
V
CE
= 960V
t
d(off)
- - - -
t
fi
V
CE
= 960V
t
d(off)
- - - -
340
330
320
R
G
= 10Ω , V
GE
= 15V
R
G
= 10Ω , V
GE
= 15V
t
d(off)
- Nanoseconds
t
d(off)
- Nanoseconds
t
f i
- Nanoseconds
t
f i
- Nanoseconds
1100
1000
900
800
700
600
20
22
24
26
28
30
32
34
36
38
40
T
J
= 25ºC
T
J
= 125ºC
330
320
310
300
290
280
1100
1000
900
800
700
600
25
35
45
55
65
75
85
95
105
115
I
= 20A
I
C
= 40A
C
310
300
290
280
270
125
I
C
- Amperes
T
J
- Degrees Centigrade
© 2009 IXYS CORPORATION, All Rights Reserved
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