JANTX2N4092UB datasheet, PDF - EEWORLD Datasheet

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JANTX2N4092UB: DescriptionSmall Signal Field-Effect Transistor, 40V, 1-Element, N-Channel, Silicon, Junction FET, SURFACE MOUNT PACKAGE-3; CategoryDiscrete semiconductor The transistor; File Size49KB，2 Pages; ManufacturerMicrosemi; Websitehttps://www.microsemi.com

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JANTX2N4092UB Overview

Small Signal Field-Effect Transistor, 40V, 1-Element, N-Channel, Silicon, Junction FET, SURFACE MOUNT PACKAGE-3

JANTX2N4092UB Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Objectid	1938679449
package instruction	SMALL OUTLINE, R-XDSO-N3
Contacts	3
Reach Compliance Code	not_compliant
ECCN code	EAR99
Configuration	SINGLE
Minimum drain-source breakdown voltage	40 V
Maximum drain-source on-resistance	50 Ω
FET technology	JUNCTION
Maximum feedback capacitance (Crss)	5 pF
JESD-30 code	R-XDSO-N3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Operating mode	DEPLETION MODE
Maximum operating temperature	175 °C
Package body material	UNSPECIFIED
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	N-CHANNEL
Certification status	Not Qualified
Guideline	MIL-19500/431C
surface mount	YES
Terminal surface	TIN LEAD
Terminal form	NO LEAD
Terminal location	DUAL
transistor applications	SWITCHING
Transistor component materials	SILICON

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TECHNICAL DATA

N-CHANNEL J-FET

Qualified per MIL-PRF-19500/431

Devices

2N4091

2N4091UB

2N4092

2N4092UB

2N4093

2N4093UB

Qualified Level

JANTX

JANTXV

ABSOLUTE MAXIMUM RATINGS

(T

A

= +25

0

C unless otherwise noted)

Parameters / Test Conditions

Gate-Source Voltage

Drain-Source Voltage

Drain-Gate Voltage

Gate Current

Power Dissipation

(1)

Operating Junction

Operating Storage Temperature Range

(1) Derate linearly 2.4 mW/

0

C for T

A

> 25

0

C.

Symbol

V

GS

V

DS

V

DG

I

G

P

T

j

T

stg

Value

-40

40

10

0.36

-65 to +175

-65 to +200

Units

V

mAdc

W

0

C

0

C

T

A

= +25

0

C

TO-18*

(TO-206AA)

Surface Mount

(UB version)

*See appendix A for

package outline

ELECTRICAL CHARACTERISTICS (T

C

= +25

0

C unless otherwise noted)

PARAMETERS / TEST CONDITIONS

Symbol

Gate-Source Breakdown Voltage

V

DS

= 0, I

G

= -1.0

µAdc

Gate Reverse Current

V

DS

= 0, V

GS

= -20 Vdc

Drain Current

V

GS

= -12, V

DS

= 20 Vdc

V

GS

= -8.0, V

DS

= 20 Vdc

V

GS

= -6.0, V

DS

= 20 Vdc

Drain Current

V

GS

= 0, V

DS

= 20 Vdc

V

(BR)GSS

I

GSS

2N4091

2N4092

2N4093

2N4091

2N4092

2N4093

Min.

-40

Max.

Units

Vdc

-0.1

ηA

I

D(off)

0.1

ηA

I

DSS

30

15

8.0

mA

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803

022802

Page 1 of 2

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